BFS 17P E6433
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Infineon Technologies BFS 17P E6433

Manufacturer No:
BFS 17P E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.4GHZ SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BFS 17P E6433 is a high-performance NPN silicon RF transistor manufactured by Infineon Technologies. This transistor is designed for various RF applications, particularly in the sub-GHz frequency range. It is packaged in a compact SOT23 (TO-236-3) surface mount package, making it suitable for a wide range of electronic devices where space is a constraint. The BFS 17P E6433 is known for its low noise figure, high gain, and robust thermal performance, making it an ideal choice for broadband amplifiers, mixers, and oscillators.

Key Specifications

ParameterSymbolValuesUnitNote or Test Condition
Collector-Emitter Breakdown VoltageVCEO15V
Collector CurrentIC25mA
Peak Collector CurrentICM50mA
Total Power DissipationPtot280mWTS ≤ 95 °C
Junction TemperatureTj150°C
Ambient TemperatureTA-65 to 150°C
Transition FrequencyfT1.4GHz
Noise FigureNFmin3.5dBIC = 2 mA, VCE = 5 V, f = 800 MHz
Third Order Intercept PointOIP321.5dBmVCE = 5 V, IC = 20 mA, f = 800 MHz
1 dB Output Compression PointP-1dB10dBmIC = 20 mA, VCE = 5 V, f = 800 MHz

Key Features

  • Low noise figure of 3.5 dB, making it suitable for high-sensitivity applications.
  • High gain with a transducer gain of up to 13 dB.
  • Robust thermal performance with a maximum total power dissipation of 280 mW.
  • Compact SOT23 (TO-236-3) surface mount package for space-efficient designs.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • High transition frequency of 1.4 GHz, suitable for sub-GHz applications.

Applications

  • Broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.
  • Mixers and oscillators in sub-GHz applications.
  • General-purpose RF amplification in various electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BFS 17P E6433?
    The maximum collector-emitter voltage (VCEO) is 15 V.
  2. What is the maximum collector current of the BFS 17P E6433?
    The maximum collector current (IC) is 25 mA.
  3. What is the noise figure of the BFS 17P E6433?
    The noise figure (NFmin) is 3.5 dB at IC = 2 mA, VCE = 5 V, and f = 800 MHz.
  4. What is the transition frequency of the BFS 17P E6433?
    The transition frequency (fT) is 1.4 GHz.
  5. What is the package type of the BFS 17P E6433?
    The package type is SOT23 (TO-236-3) surface mount.
  6. Is the BFS 17P E6433 RoHS compliant?
    Yes, the BFS 17P E6433 is Pb-free (RoHS compliant).
  7. What are the typical applications of the BFS 17P E6433?
    Typical applications include broadband amplifiers, mixers, and oscillators in sub-GHz applications.
  8. What is the maximum total power dissipation of the BFS 17P E6433?
    The maximum total power dissipation (Ptot) is 280 mW at TS ≤ 95 °C.
  9. What is the junction temperature range of the BFS 17P E6433?
    The junction temperature range is up to 150 °C.
  10. What is the 1 dB output compression point of the BFS 17P E6433?
    The 1 dB output compression point (P-1dB) is 10 dBm at IC = 20 mA, VCE = 5 V, and f = 800 MHz.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB ~ 5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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