BFS 17P E6433
  • Share:

Infineon Technologies BFS 17P E6433

Manufacturer No:
BFS 17P E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.4GHZ SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFS 17P E6433 is a high-performance NPN silicon RF transistor manufactured by Infineon Technologies. This transistor is designed for various RF applications, particularly in the sub-GHz frequency range. It is packaged in a compact SOT23 (TO-236-3) surface mount package, making it suitable for a wide range of electronic devices where space is a constraint. The BFS 17P E6433 is known for its low noise figure, high gain, and robust thermal performance, making it an ideal choice for broadband amplifiers, mixers, and oscillators.

Key Specifications

ParameterSymbolValuesUnitNote or Test Condition
Collector-Emitter Breakdown VoltageVCEO15V
Collector CurrentIC25mA
Peak Collector CurrentICM50mA
Total Power DissipationPtot280mWTS ≤ 95 °C
Junction TemperatureTj150°C
Ambient TemperatureTA-65 to 150°C
Transition FrequencyfT1.4GHz
Noise FigureNFmin3.5dBIC = 2 mA, VCE = 5 V, f = 800 MHz
Third Order Intercept PointOIP321.5dBmVCE = 5 V, IC = 20 mA, f = 800 MHz
1 dB Output Compression PointP-1dB10dBmIC = 20 mA, VCE = 5 V, f = 800 MHz

Key Features

  • Low noise figure of 3.5 dB, making it suitable for high-sensitivity applications.
  • High gain with a transducer gain of up to 13 dB.
  • Robust thermal performance with a maximum total power dissipation of 280 mW.
  • Compact SOT23 (TO-236-3) surface mount package for space-efficient designs.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • High transition frequency of 1.4 GHz, suitable for sub-GHz applications.

Applications

  • Broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.
  • Mixers and oscillators in sub-GHz applications.
  • General-purpose RF amplification in various electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BFS 17P E6433?
    The maximum collector-emitter voltage (VCEO) is 15 V.
  2. What is the maximum collector current of the BFS 17P E6433?
    The maximum collector current (IC) is 25 mA.
  3. What is the noise figure of the BFS 17P E6433?
    The noise figure (NFmin) is 3.5 dB at IC = 2 mA, VCE = 5 V, and f = 800 MHz.
  4. What is the transition frequency of the BFS 17P E6433?
    The transition frequency (fT) is 1.4 GHz.
  5. What is the package type of the BFS 17P E6433?
    The package type is SOT23 (TO-236-3) surface mount.
  6. Is the BFS 17P E6433 RoHS compliant?
    Yes, the BFS 17P E6433 is Pb-free (RoHS compliant).
  7. What are the typical applications of the BFS 17P E6433?
    Typical applications include broadband amplifiers, mixers, and oscillators in sub-GHz applications.
  8. What is the maximum total power dissipation of the BFS 17P E6433?
    The maximum total power dissipation (Ptot) is 280 mW at TS ≤ 95 °C.
  9. What is the junction temperature range of the BFS 17P E6433?
    The junction temperature range is up to 150 °C.
  10. What is the 1 dB output compression point of the BFS 17P E6433?
    The 1 dB output compression point (P-1dB) is 10 dBm at IC = 20 mA, VCE = 5 V, and f = 800 MHz.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB ~ 5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
59

Please send RFQ , we will respond immediately.

Related Product By Categories

BFS17NTA
BFS17NTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23-3
BLT81
BLT81
NXP USA Inc.
RF SMALL SIGNAL BIPOLAR TRANSIST
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BFU520WF
BFU520WF
NXP USA Inc.
RF TRANS NPN 12V 10GHZ SOT323-3
BFS17WE6327
BFS17WE6327
Infineon Technologies
RF BIPOLAR TRANSISTOR
BFU550XR235
BFU550XR235
NXP USA Inc.
NPN RF TRANSISTOR
BFS17PE6327HTSA1
BFS17PE6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BFU550XVL
BFU550XVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BFG310/XR,215
BFG310/XR,215
NXP USA Inc.
RF TRANS NPN 6V 14GHZ SOT143R
BFR540,235
BFR540,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ TO236AB
BFT93,215
BFT93,215
NXP USA Inc.
RF TRANS PNP 12V 5GHZ TO236AB
LM3046MX/NOPB
LM3046MX/NOPB
Texas Instruments
RF TRANS 5 NPN 15V 14SOIC

Related Product By Brand

BAS21UE6327HTSA1
BAS21UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 200V 250MA SC74-6
BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BC847PNE6433BTMA1
BC847PNE6433BTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC850CE6327
BC850CE6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
BSS138NL6433HTMA1
BSS138NL6433HTMA1
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
BTS6143DAUMA1
BTS6143DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
TLF35584QVVS1XUMA2
TLF35584QVVS1XUMA2
Infineon Technologies
IC REG AUTO APPL 1OUT VQFN-48-31