BFG541,115
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NXP USA Inc. BFG541,115

Manufacturer No:
BFG541,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 9GHZ SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFG541,115 is a high-performance RF Bipolar Junction Transistor (BJT) manufactured by NXP USA Inc. This transistor is designed for high-frequency applications, particularly in the RF domain. It is known for its excellent high-frequency characteristics, making it suitable for a variety of radio frequency and microwave applications.

Key Specifications

Parameter Value
Part Number BFG541,115
Manufacturer NXP USA Inc.
Transistor Type NPN RF Bipolar Junction Transistor (BJT)
Maximum Collector-Emitter Voltage (Vceo) 15 V
Maximum Frequency 9 GHz
Package/Case Type TO-261-4, TO-261AA Surface Mount

Key Features

The BFG541,115 boasts several key features that make it an ideal choice for RF applications:

  • High Frequency Operation: The transistor is capable of operating up to 9 GHz, making it suitable for high-frequency applications.
  • Low Noise Figure: It has a low noise figure, which is crucial for maintaining signal integrity in RF circuits.
  • High Gain: The transistor offers high gain, which is essential for amplifying weak RF signals.
  • Surface Mount Package: The TO-261-4 and TO-261AA surface mount packages make it easy to integrate into modern PCB designs.

Applications

The BFG541,115 is widely used in various RF and microwave applications, including:

  • RF Amplifiers: It is used in the design of RF amplifiers due to its high gain and low noise figure.
  • Microwave Circuits: The transistor is suitable for microwave circuits requiring high-frequency operation.
  • Wireless Communication Systems: It is used in wireless communication systems, such as cellular networks and satellite communications.
  • Radar Systems: The BFG541,115 is also used in radar systems due to its high-frequency capabilities.

Q & A

  1. What is the maximum collector-emitter voltage (Vceo) of the BFG541,115?

    The maximum collector-emitter voltage (Vceo) of the BFG541,115 is 15 V.

  2. What is the maximum operating frequency of the BFG541,115?

    The maximum operating frequency of the BFG541,115 is 9 GHz.

  3. What type of package does the BFG541,115 come in?

    The BFG541,115 comes in TO-261-4 and TO-261AA surface mount packages.

  4. What are some common applications of the BFG541,115?

    The BFG541,115 is commonly used in RF amplifiers, microwave circuits, wireless communication systems, and radar systems.

  5. Who is the manufacturer of the BFG541,115?

    The BFG541,115 is manufactured by NXP USA Inc.

  6. What is the transistor type of the BFG541,115?

    The BFG541,115 is an NPN RF Bipolar Junction Transistor (BJT).

  7. Why is the BFG541,115 suitable for high-frequency applications?

    The BFG541,115 is suitable for high-frequency applications due to its high gain, low noise figure, and ability to operate up to 9 GHz.

  8. Where can I find detailed specifications of the BFG541,115?

    Detailed specifications of the BFG541,115 can be found in the datasheet available on the NXP website or through distributors like Mouser Electronics.

  9. Is the BFG541,115 easy to integrate into PCB designs?

    Yes, the BFG541,115 is easy to integrate into PCB designs due to its surface mount package.

  10. What are the benefits of using the BFG541,115 in RF amplifiers?

    The benefits include high gain, low noise figure, and the ability to operate at high frequencies, which are essential for maintaining signal integrity in RF circuits.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.3dB ~ 2.4dB @ 900MHz
Gain:- 
Power - Max:650mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 40mA, 8V
Current - Collector (Ic) (Max):120mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SC-73
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Similar Products

Part Number BFG541,115 BFG591,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 9GHz 7GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 2.4dB @ 900MHz -
Gain - -
Power - Max 650mW 2W
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 40mA, 8V 60 @ 70mA, 8V
Current - Collector (Ic) (Max) 120mA 200mA
Operating Temperature 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SC-73 SC-73

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