BFU550XVL
  • Share:

NXP USA Inc. BFU550XVL

Manufacturer No:
BFU550XVL
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 11GHZ SOT143B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU550XVL is an NPN wideband silicon RF transistor produced by NXP USA Inc. It is part of the BFU5 family of transistors, designed for small signal to medium power applications up to 2 GHz. This transistor is housed in a plastic, 4-pin dual-emitter SOT-143B package, making it suitable for a variety of high-speed, low-noise radio frequency (RF) applications.

Key Specifications

Parameter Value
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 11GHz
Noise Figure (dB Typ @ f) 1.3dB @ 1.8GHz
Gain 15.5dB
Power - Max 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V
Current - Collector (Ic) (Max) 50mA
Mounting Type Surface Mount, Gull Wing
Package / Case SOT-143B
Operating Temperature -40°C ~ 150°C (TJ)

Key Features

  • High-speed operation up to 2 GHz
  • Low noise figure, typically 1.3dB at 1.8GHz
  • High gain of 15.5dB
  • Maximum collector current of 50mA
  • Maximum power dissipation of 450mW
  • Surface mount package (SOT-143B) for easy integration
  • Wide operating temperature range from -40°C to 150°C (TJ)

Applications

  • Radio frequency amplifiers and circuits
  • High-speed data transmission systems
  • Low-noise amplifiers in communication equipment
  • Radar and microwave systems
  • Wireless communication devices

Q & A

  1. What is the maximum operating frequency of the BFU550XVL transistor?

    The BFU550XVL transistor can operate up to 2 GHz.

  2. What is the noise figure of the BFU550XVL transistor at 1.8 GHz?

    The noise figure is typically 1.3 dB at 1.8 GHz.

  3. What is the maximum collector current of the BFU550XVL transistor?

    The maximum collector current is 50 mA.

  4. What is the maximum power dissipation of the BFU550XVL transistor?

    The maximum power dissipation is 450 mW.

  5. What is the package type of the BFU550XVL transistor?

    The transistor is housed in a SOT-143B package.

  6. What is the operating temperature range of the BFU550XVL transistor?

    The operating temperature range is from -40°C to 150°C (TJ).

  7. What are some common applications of the BFU550XVL transistor?

    Common applications include radio frequency amplifiers, high-speed data transmission systems, low-noise amplifiers, radar and microwave systems, and wireless communication devices.

  8. What is the DC current gain (hFE) of the BFU550XVL transistor?

    The DC current gain (hFE) is at least 60 at 15 mA and 8 V.

  9. Is the BFU550XVL transistor suitable for surface mounting?
  10. Where can I find design files and models for the BFU550XVL transistor?

    Design files and models, including S-parameters and SPICE models, are available on the NXP Semiconductors website.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:11GHz
Noise Figure (dB Typ @ f):1.3dB @ 1.8GHz
Gain:15.5dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 15mA, 8V
Current - Collector (Ic) (Max):50mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:SOT-143B
0 Remaining View Similar

In Stock

$0.28
2,989

Please send RFQ , we will respond immediately.

Same Series
BFU550XAR
BFU550XAR
RF TRANS NPN 12V 11GHZ SOT143B

Similar Products

Part Number BFU550XVL BFU520XVL BFU530XVL BFU550AVL BFU550VL BFU550XRVL
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V 12V 12V 12V
Frequency - Transition 11GHz 10.5GHz 11GHz 11GHz 11GHz 11GHz
Noise Figure (dB Typ @ f) 1.3dB @ 1.8GHz 1.1dB @ 1.8GHz 1.1dB @ 1.8GHz 1.4dB @ 1.8GHz 1.3dB @ 1.8GHz 1.25dB @ 1.8GHz
Gain 15.5dB 18dB 16.5dB 12dB 15dB 15.5dB
Power - Max 450mW 450mW 450mW 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V 60 @ 5mA, 8V 60 @ 10mA, 8V 60 @ 15mA, 8V 60 @ 15mA, 8V 60 @ 15mA, 8V
Current - Collector (Ic) (Max) 50mA 30mA 40mA 50mA 50mA 50mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-253-4, TO-253AA TO-253-4, TO-253AA TO-253-4, TO-253AA TO-236-3, SC-59, SOT-23-3 TO-253-4, TO-253AA SOT-143R
Supplier Device Package SOT-143B SOT-143B SOT-143B SOT-23 (TO-236AB) SOT-143B SOT-143R

Related Product By Categories

BFU790F,115
BFU790F,115
NXP USA Inc.
RF TRANS NPN 2.8V 25GHZ 4DFP
BFU520X235
BFU520X235
NXP USA Inc.
NPN RF TRANSISTOR
BFU550WX
BFU550WX
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
BFU590QX
BFU590QX
NXP USA Inc.
RF TRANS NPN 12V 8GHZ SOT89-3
BFS17PE6327HTSA1
BFS17PE6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BFQ67W,135
BFQ67W,135
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT323-3
BFQ67,215
BFQ67,215
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
BFG541,115
BFG541,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT223
BFR92A,235
BFR92A,235
NXP USA Inc.
RF TRANS NPN 15V 5GHZ TO236AB
BFG21W,115
BFG21W,115
NXP USA Inc.
RF TRANS NPN 4.5V 18GHZ CMPAK-4
BFR 93AW E6327
BFR 93AW E6327
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3
BFG540W/XR,135
BFG540W/XR,135
NXP USA Inc.
RF TRANS NPN 15V 9GHZ CMPAK-4

Related Product By Brand

Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
BF909A215
BF909A215
NXP USA Inc.
MOSFET N-CH SOT-143B
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MCF52110CAE66
MCF52110CAE66
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74HC240D/C118
74HC240D/C118
NXP USA Inc.
IC BUFFER INVERT 6V 20SO
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
MC33FS4500CAER2
MC33FS4500CAER2
NXP USA Inc.
SYSTEM BASIS CHIP LINEAR 0.5A V
MPX5010GP
MPX5010GP
NXP USA Inc.
SENSOR GAUGE PRESS 1.45 PSI MAX