Overview
The onsemi MMBTH10LT1G is a high-performance NPN silicon bipolar transistor designed for VHF/UHF applications. This transistor is part of the MMBTH series and is packaged in a SOT-23 (SC-59, TO-236) surface mount package. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| Polarity | NPN | |
| Collector-Emitter Voltage (VCEO) | 25 | Vdc |
| Collector-Base Voltage (VCBO) | 30 | Vdc |
| Emitter-Base Voltage (VEBO) | 3.0 | Vdc |
| Maximum DC Collector Current | 4 | mA |
| Power Dissipation (PD) | 225 | mW |
| Thermal Resistance, Junction to Ambient (RθJA) | 556 | °C/W |
| Package Style | SOT-23 (SC-59, TO-236) | |
| Mounting Method | Surface Mount | |
| Collector Cutoff Current (ICBO) | 100 | nA |
| Emitter Cutoff Current (IEBO) | 100 | nA |
| DC Current Gain (hFE) | 60 - 240 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.5 | Vdc |
| Base-Emitter On Voltage (VBE) | 0.95 | Vdc |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other stringent applications.
- Pb-free, halogen-free, and RoHS compliant.
- High-frequency performance with a current-gain bandwidth product (fT) of up to 800 MHz.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.5 Vdc.
- Low base-emitter on voltage (VBE) of 0.95 Vdc.
- Compact SOT-23 package for space-efficient designs.
Applications
The onsemi MMBTH10LT1G is designed for use in VHF/UHF applications, including but not limited to:
- RF amplifiers and mixers.
- Automotive electronics requiring high reliability and quality standards.
- General-purpose high-frequency amplification.
- Wireless communication systems.
Q & A
- What is the polarity of the MMBTH10LT1G transistor?
The MMBTH10LT1G is an NPN transistor. - What is the maximum collector-emitter voltage (VCEO) of the MMBTH10LT1G?
The maximum collector-emitter voltage (VCEO) is 25 Vdc. - What is the maximum DC collector current of the MMBTH10LT1G?
The maximum DC collector current is 4 mA. - Is the MMBTH10LT1G RoHS compliant?
Yes, the MMBTH10LT1G is Pb-free, halogen-free, and RoHS compliant. - What is the package style of the MMBTH10LT1G?
The package style is SOT-23 (SC-59, TO-236). - What are the thermal characteristics of the MMBTH10LT1G?
The total device dissipation (PD) is 225 mW, and the thermal resistance, junction to ambient (RθJA), is 556 °C/W. - What is the current-gain bandwidth product (fT) of the MMBTH10LT1G?
The current-gain bandwidth product (fT) is up to 800 MHz. - Is the MMBTH10LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications. - What is the collector-emitter saturation voltage (VCE(sat)) of the MMBTH10LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc. - What is the base-emitter on voltage (VBE) of the MMBTH10LT1G?
The base-emitter on voltage (VBE) is 0.95 Vdc.
