Overview
The BFR93AWH6327XTSA1 is a high-performance NPN silicon bipolar RF transistor produced by Infineon Technologies. This component is designed for low-noise, high-gain broadband amplifiers and is particularly suited for RF applications requiring high frequency operation and low noise figures.
The transistor is housed in a SOT23 package, which is Pb-free and RoHS compliant, making it environmentally friendly. It is also qualified according to AEC-Q101, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage at Open Base | VCEO | 12 | V |
| Collector-Base Voltage at Open Emitter | VCBO | 20 | V |
| Emitter-Base Voltage at Open Collector | VEBO | 2 | V |
| Collector Current (DC) | IC | 35 mA (typ), 90 mA (max) | mA |
| Total Power Dissipation | Ptot | 300 mW | mW |
| Noise Figure | - | 1.9 dB | dB |
| Transition Frequency | fT | 6 GHz | GHz |
| Junction Temperature | TJ | -150 to +175 °C | °C |
| Storage Temperature | TStg | -55 to +150 °C | °C |
Key Features
- High power gain and low noise figure, making it suitable for high-performance RF amplifiers.
- Very low intermodulation distortion, ensuring high signal integrity.
- Pb-free and RoHS compliant SOT23 package.
- AEC-Q101 qualified for reliability in automotive and other demanding environments.
- ESD sensitive device with handling precautions necessary.
Applications
- RF wideband amplifiers and oscillators.
- High-frequency communication systems.
- Automotive and industrial RF applications requiring low noise and high gain.
- Broadband communication equipment.
Q & A
- What is the collector-emitter voltage at open base for the BFR93AWH6327XTSA1?
The collector-emitter voltage at open base (VCEO) is 12 V.
- What is the maximum collector current for this transistor?
The maximum collector current (IC) is 90 mA.
- What is the noise figure of the BFR93AWH6327XTSA1?
The noise figure is approximately 1.9 dB.
- What is the transition frequency of this transistor?
The transition frequency (fT) is 6 GHz.
- Is the BFR93AWH6327XTSA1 RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What are the typical applications of the BFR93AWH6327XTSA1?
Typical applications include RF wideband amplifiers, oscillators, and high-frequency communication systems.
- What is the junction temperature range for this transistor?
The junction temperature range is -150 to +175 °C.
- Is the BFR93AWH6327XTSA1 qualified according to AEC-Q101?
Yes, it is qualified according to AEC-Q101 for automotive and other demanding environments.
- What is the total power dissipation of the BFR93AWH6327XTSA1?
The total power dissipation (Ptot) is 300 mW.
- What package type is used for the BFR93AWH6327XTSA1?
The transistor is housed in a SOT23 package.
