BFU550WF
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NXP Semiconductors BFU550WF

Manufacturer No:
BFU550WF
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
BFU550W - NPN WIDEBAND SILICON R
Delivery:
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Product Introduction

Overview

The BFU550WF is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors from NXP Semiconductors. This transistor is packaged in a 3-pin SC-70 (SOT323) package, making it suitable for surface mount technology. The BFU550WF is particularly useful in radio frequency (RF) circuits where high performance and reliability are critical.

Key Specifications

Parameter Value Unit
Transistor Type NPN -
Maximum Collector-Emitter Voltage 16 V
Maximum Collector Current 0.08 A
Maximum Power Dissipation 450 mW
Operating Temperature Range -40 to 150 °C
Package Type SC-70 (SOT323) -
Lead Shape Gull-wing -
Compliance AEC-Q101, EU RoHS, Halogen Free, REACH SVHC -

Key Features

  • High-Speed Operation: Suitable for high-frequency applications due to its low noise and high-speed characteristics.
  • Low Noise: Designed to minimize noise in RF circuits, enhancing signal quality.
  • Compact Packaging: SC-70 (SOT323) package for surface mount technology, ideal for space-constrained designs.
  • Automotive Compliance: Meets AEC-Q101 standards, making it reliable for automotive applications.
  • Environmental Compliance: Compliant with EU RoHS, Halogen Free, and REACH SVHC regulations.

Applications

  • Radio Frequency Circuits: Ideal for use in RF amplifiers, oscillators, and other high-frequency applications.
  • Automotive Electronics: Suitable for various automotive systems requiring high reliability and performance.
  • Wireless Communication Systems: Used in wireless communication devices, such as mobile phones and base stations.
  • Radar and Aerospace Systems: Applicable in radar transceivers and other aerospace and defense systems.

Q & A

  1. What is the transistor type of the BFU550WF?

    The BFU550WF is an NPN silicon RF transistor.

  2. What is the maximum collector-emitter voltage of the BFU550WF?

    The maximum collector-emitter voltage is 16 V.

  3. What is the maximum power dissipation of the BFU550WF?

    The maximum power dissipation is 450 mW.

  4. What is the operating temperature range of the BFU550WF?

    The operating temperature range is from -40°C to 150°C.

  5. What package type does the BFU550WF use?

    The BFU550WF is packaged in a 3-pin SC-70 (SOT323) package.

  6. Is the BFU550WF compliant with automotive standards?

    Yes, it is compliant with AEC-Q101 standards.

  7. Is the BFU550WF environmentally compliant?

    Yes, it is compliant with EU RoHS, Halogen Free, and REACH SVHC regulations.

  8. What are some common applications of the BFU550WF?

    It is commonly used in RF circuits, automotive electronics, wireless communication systems, and radar and aerospace systems.

  9. What is the lead shape of the BFU550WF package?

    The lead shape is gull-wing.

  10. Is the BFU550WF suitable for surface mount technology?

    Yes, it is suitable for surface mount technology due to its SC-70 (SOT323) package.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:11GHz
Noise Figure (dB Typ @ f):1.3dB @ 1.8GHz
Gain:18dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 15mA, 8V
Current - Collector (Ic) (Max):50mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
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BFU550WF
BFU550WF
BFU550W - NPN WIDEBAND SILICON R

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