BFQ67W,135
  • Share:

NXP USA Inc. BFQ67W,135

Manufacturer No:
BFQ67W,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 10V 8GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFQ67W,135 is a high-performance NPN bipolar junction transistor (BJT) manufactured by NXP USA Inc. This component is designed for high-frequency applications and is known for its excellent noise figure and transition frequency. The BFQ67W,135 is packaged in the SOT-323 (SC-70) package, making it suitable for surface mount technology (SMT) and ideal for compact electronic designs.

Key Specifications

ParameterValue
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Current - Collector (Ic) (Max)50mA
Power - Max300mW
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.3dB ~ 3dB @ 1GHz ~ 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 15mA, 5V
Operating Temperature175°C (TJ)
Package / CaseSOT-323 (SC-70)
Mounting TypeSurface Mount

Key Features

  • High-frequency operation up to 8GHz
  • Low noise figure of 1.3dB ~ 3dB at 1GHz ~ 2GHz
  • High DC current gain (hFE) of 60 @ 15mA, 5V
  • Compact SOT-323 (SC-70) package suitable for surface mount technology
  • Maximum collector current of 50mA and maximum power of 300mW
  • Operating temperature up to 175°C (TJ)

Applications

  • RF amplifiers and oscillators
  • High-frequency switching circuits
  • Wireless communication systems
  • Medical and industrial equipment requiring high-frequency transistors
  • Automotive and aerospace applications where high reliability is crucial

Q & A

  1. What is the transistor type of the BFQ67W,135?
    The BFQ67W,135 is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter breakdown voltage of the BFQ67W,135?
    The maximum collector-emitter breakdown voltage is 10V.
  3. What is the maximum collector current of the BFQ67W,135?
    The maximum collector current is 50mA.
  4. What is the transition frequency of the BFQ67W,135?
    The transition frequency is 8GHz.
  5. What is the noise figure of the BFQ67W,135 at 1GHz to 2GHz?
    The noise figure is 1.3dB ~ 3dB at 1GHz ~ 2GHz.
  6. What is the DC current gain (hFE) of the BFQ67W,135?
    The DC current gain (hFE) is 60 @ 15mA, 5V.
  7. What is the operating temperature range of the BFQ67W,135?
    The operating temperature range is up to 175°C (TJ).
  8. What package type is used for the BFQ67W,135?
    The BFQ67W,135 is packaged in the SOT-323 (SC-70) package.
  9. What is the mounting type of the BFQ67W,135?
    The mounting type is surface mount.
  10. What are some common applications of the BFQ67W,135?
    Common applications include RF amplifiers, high-frequency switching circuits, wireless communication systems, and medical and industrial equipment.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):10V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 15mA, 5V
Current - Collector (Ic) (Max):50mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
0 Remaining View Similar

In Stock

-
191

Please send RFQ , we will respond immediately.

Same Series
BFQ67W,115
BFQ67W,115
RF TRANS NPN 10V 8GHZ SOT323-3

Similar Products

Part Number BFQ67W,135 BFQ67W,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 10V 10V
Frequency - Transition 8GHz 8GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 3dB @ 1GHz ~ 2GHz 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain - -
Power - Max 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 5V 60 @ 15mA, 5V
Current - Collector (Ic) (Max) 50mA 50mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70

Related Product By Categories

BFU530WX
BFU530WX
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
PBR941
PBR941
NXP Semiconductors
RF SMALL SIGNAL BIPOLAR TRANSIST
BFU520WX
BFU520WX
NXP USA Inc.
RF TRANS NPN 12V 10GHZ SOT323-3
BFU550XR215
BFU550XR215
NXP USA Inc.
NPN RF TRANSISTOR
MX0912B351Y
MX0912B351Y
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
BFG410W,115
BFG410W,115
NXP USA Inc.
RF TRANS NPN 4.5V 22GHZ CMPAK-4
BFS17W,115
BFS17W,115
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
BFR92AW,115
BFR92AW,115
NXP USA Inc.
RF TRANS NPN 15V 5GHZ SOT323-3
BFT93W,115
BFT93W,115
NXP USA Inc.
RF TRANS PNP 12V 4GHZ SOT323-3
BFG310W/XR,115
BFG310W/XR,115
NXP USA Inc.
RF TRANS NPN 6V 14GHZ CMPAK-4
BFG540W/XR,135
BFG540W/XR,135
NXP USA Inc.
RF TRANS NPN 15V 9GHZ CMPAK-4
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3

Related Product By Brand

BC807-25/L215
BC807-25/L215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
S9S12G128AMLH
S9S12G128AMLH
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 64LQFP
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
P89LPC935FDH,518
P89LPC935FDH,518
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
LS1027AXE7PQA
LS1027AXE7PQA
NXP USA Inc.
LS1027A-1500 XT SEC
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
TJA1051T/3/1U
TJA1051T/3/1U
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
TDA7052BT/N1,112
TDA7052BT/N1,112
NXP USA Inc.
IC AMP CLASS AB MONO 550MW 8SO
TEA18363T/2J
TEA18363T/2J
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 8SO
74LV165DB118
74LV165DB118
NXP USA Inc.
NOW NEXPERIA 74LV165DB - PARALLE
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX