BFQ67W,135
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NXP USA Inc. BFQ67W,135

Manufacturer No:
BFQ67W,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 10V 8GHZ SOT323-3
Delivery:
Payment:
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Product Introduction

Overview

The BFQ67W,135 is a high-performance NPN bipolar junction transistor (BJT) manufactured by NXP USA Inc. This component is designed for high-frequency applications and is known for its excellent noise figure and transition frequency. The BFQ67W,135 is packaged in the SOT-323 (SC-70) package, making it suitable for surface mount technology (SMT) and ideal for compact electronic designs.

Key Specifications

ParameterValue
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Current - Collector (Ic) (Max)50mA
Power - Max300mW
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.3dB ~ 3dB @ 1GHz ~ 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 15mA, 5V
Operating Temperature175°C (TJ)
Package / CaseSOT-323 (SC-70)
Mounting TypeSurface Mount

Key Features

  • High-frequency operation up to 8GHz
  • Low noise figure of 1.3dB ~ 3dB at 1GHz ~ 2GHz
  • High DC current gain (hFE) of 60 @ 15mA, 5V
  • Compact SOT-323 (SC-70) package suitable for surface mount technology
  • Maximum collector current of 50mA and maximum power of 300mW
  • Operating temperature up to 175°C (TJ)

Applications

  • RF amplifiers and oscillators
  • High-frequency switching circuits
  • Wireless communication systems
  • Medical and industrial equipment requiring high-frequency transistors
  • Automotive and aerospace applications where high reliability is crucial

Q & A

  1. What is the transistor type of the BFQ67W,135?
    The BFQ67W,135 is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter breakdown voltage of the BFQ67W,135?
    The maximum collector-emitter breakdown voltage is 10V.
  3. What is the maximum collector current of the BFQ67W,135?
    The maximum collector current is 50mA.
  4. What is the transition frequency of the BFQ67W,135?
    The transition frequency is 8GHz.
  5. What is the noise figure of the BFQ67W,135 at 1GHz to 2GHz?
    The noise figure is 1.3dB ~ 3dB at 1GHz ~ 2GHz.
  6. What is the DC current gain (hFE) of the BFQ67W,135?
    The DC current gain (hFE) is 60 @ 15mA, 5V.
  7. What is the operating temperature range of the BFQ67W,135?
    The operating temperature range is up to 175°C (TJ).
  8. What package type is used for the BFQ67W,135?
    The BFQ67W,135 is packaged in the SOT-323 (SC-70) package.
  9. What is the mounting type of the BFQ67W,135?
    The mounting type is surface mount.
  10. What are some common applications of the BFQ67W,135?
    Common applications include RF amplifiers, high-frequency switching circuits, wireless communication systems, and medical and industrial equipment.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):10V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 15mA, 5V
Current - Collector (Ic) (Max):50mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
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Same Series
BFQ67W,135
BFQ67W,135
RF TRANS NPN 10V 8GHZ SOT323-3

Similar Products

Part Number BFQ67W,135 BFQ67W,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 10V 10V
Frequency - Transition 8GHz 8GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 3dB @ 1GHz ~ 2GHz 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain - -
Power - Max 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 5V 60 @ 15mA, 5V
Current - Collector (Ic) (Max) 50mA 50mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70

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