Overview
The BFG410W,135, produced by NXP USA Inc., is a high-performance NPN 22 GHz wideband transistor. This component is designed for low voltage applications and is particularly suited for RF front-end and wideband applications. It features a plastic, 4-pin dual-emitter SOT343R package, making it ideal for surface mount technology. The transistor is known for its very high power gain, low noise figure, and high transition frequency, making it a reliable choice for various electronic circuits.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage (V(BR)CBO) | IC = 2.5 µA; IE = 0 | 10 | - | - | V |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | IC = 1 mA; IB = 0 | - | - | 4.5 | V |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | IE = 2.5 µA; IC = 0 | 1 | - | - | V |
| Collector-Base Leakage Current (ICBO) | IE = 0; VCB = 4.5 V | - | - | 15 nA | nA |
| Transition Frequency (fT) | - | - | - | 17 GHz | GHz |
| Maximum Collector Current (Ic) | - | - | - | 3.6 mA | mA |
| DC Current Gain (hFE) | At Ic = 3 mA, Vce = 2 V | 50 | - | - | - |
| Operating Temperature (TJ) | - | - | - | 150°C | °C |
| Package | - | - | - | SOT343R | - |
| Mounting Type | - | - | - | Surface Mount | - |
Key Features
- Very high power gain
- Low noise figure
- High transition frequency (17 GHz)
- Emitter is thermal lead
- Low feedback capacitance
- Low power consumption and high efficiency
- Surface Mount technology in SC-82A, SOT-343 package
Applications
- RF front end
- Wideband applications (e.g., analog and digital cellular telephones, cordless telephones like PHS, DECT)
- Radar detectors
- Pagers
- Satellite television tuners (SATV)
- High frequency oscillators
- Household appliances
- Power chargers
- LED lighting
- Computer motherboards
- Electric Vehicles
Q & A
- What is the maximum operating temperature of the BFG410W,135 transistor?
The maximum operating temperature (TJ) of the BFG410W,135 transistor is 150°C.
- What is the transition frequency of the BFG410W,135 transistor?
The transition frequency (fT) of the BFG410W,135 transistor is 17 GHz.
- What are the typical applications of the BFG410W,135 transistor?
The BFG410W,135 transistor is typically used in RF front end, wideband applications, radar detectors, pagers, satellite television tuners, and high frequency oscillators.
- What is the package type of the BFG410W,135 transistor?
The BFG410W,135 transistor is packaged in a plastic, 4-pin dual-emitter SOT343R package.
- What is the maximum collector current of the BFG410W,135 transistor?
The maximum collector current (Ic) of the BFG410W,135 transistor is 3.6 mA.
- What is the DC current gain (hFE) of the BFG410W,135 transistor?
The DC current gain (hFE) of the BFG410W,135 transistor is 50 at Ic = 3 mA and Vce = 2 V.
- Is the BFG410W,135 transistor RoHS compliant?
Yes, the BFG410W,135 transistor is Lead Free and RoHS compliant).
- What are the benefits of using the BFG410W,135 transistor in surface mount technology?
The BFG410W,135 transistor in surface mount technology offers low power consumption, high efficiency, and convenience due to its small size and SC-82A, SOT-343 package).
- Can the BFG410W,135 transistor be used in household appliances and power chargers?
Yes, the BFG410W,135 transistor can be used in household appliances, power chargers, and other similar applications due to its versatile performance characteristics).
- How is the BFG410W,135 transistor packaged for mass production and storage?
The BFG410W,135 transistor is packaged in standard Tape & Reel (TR) packaging, which is convenient for mass production and warehouse storage).
