BFU725F,115
  • Share:

NXP USA Inc. BFU725F,115

Manufacturer No:
BFU725F,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 2.8V 70GHZ 4DFP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXP BFU725F/N1,115 is an NPN silicon germanium (SiGe) microwave transistor designed for high-speed, low-noise applications. It is packaged in a plastic, 4-pin dual-emitter SOT343F package, making it suitable for a variety of RF and microwave circuits. This transistor is known for its excellent performance in amplification and switching roles, particularly in the frequency range from 1.5 GHz to 6 GHz.

Key Specifications

ParameterValueUnits
Frequency Range1.5 GHz - 6 GHzGHz
Output Power9 dBmdBm
Gain19 dBdB
PackageSOT343F (DFP4)
Supply Voltage10 VV
Collector Current (Id)25 to 40 mAmA
Noise Figure0.5 dBdB
MaterialSilicon Germanium (SiGe)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Peak Package Temperature260°C (30 sec.)°C

Key Features

  • High-speed and low-noise performance, making it ideal for RF and microwave applications.
  • Silicon Germanium (SiGe) technology for enhanced performance and reliability.
  • Wide frequency range of 1.5 GHz to 6 GHz.
  • High gain of 19 dB.
  • Low noise figure of 0.5 dB.
  • Compliant with EU RoHS, ELV, and China RoHS directives.
  • Halogen-free and lead-free packaging.

Applications

The BFU725F/N1,115 is suitable for various high-frequency applications, including:

  • RF amplifiers and switches.
  • Microwave circuits.
  • Wireless communication systems.
  • Radar and aerospace applications.
  • High-speed data transmission systems.

Q & A

  1. What is the frequency range of the BFU725F/N1,115 transistor?
    The frequency range is from 1.5 GHz to 6 GHz.
  2. What is the package type of the BFU725F/N1,115?
    The package type is SOT343F (DFP4).
  3. What is the supply voltage for the BFU725F/N1,115?
    The supply voltage is 10 V.
  4. What is the noise figure of the BFU725F/N1,115?
    The noise figure is 0.5 dB.
  5. Is the BFU725F/N1,115 compliant with RoHS directives?
    Yes, it is compliant with EU RoHS, ELV, and China RoHS directives.
  6. What material is used in the BFU725F/N1,115 transistor?
    The transistor is made of Silicon Germanium (SiGe).
  7. What is the moisture sensitivity level (MSL) of the BFU725F/N1,115?
    The MSL is 1 (Unlimited).
  8. What is the peak package temperature for the BFU725F/N1,115?
    The peak package temperature is 260°C for 30 seconds.
  9. What are some typical applications of the BFU725F/N1,115?
    Typical applications include RF amplifiers, microwave circuits, wireless communication systems, radar, and aerospace applications.
  10. Is the BFU725F/N1,115 halogen-free and lead-free?
    Yes, it is halogen-free and lead-free.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):2.8V
Frequency - Transition:70GHz
Noise Figure (dB Typ @ f):0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Gain:10dB ~ 24dB
Power - Max:136mW
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 10mA, 2V
Current - Collector (Ic) (Max):40mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343F
Supplier Device Package:4-DFP
0 Remaining View Similar

In Stock

-
569

Please send RFQ , we will respond immediately.

Same Series
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BFU660F,115
BFU660F,115
NXP USA Inc.
RF TRANS NPN 5.5V 21GHZ 4DFP
BFU760F,115
BFU760F,115
NXP USA Inc.
RF TRANS NPN 2.8V 45GHZ 4DFP
BFU530AR
BFU530AR
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
BFU590QX
BFU590QX
NXP USA Inc.
RF TRANS NPN 12V 8GHZ SOT89-3
BLF6G20S-45112
BLF6G20S-45112
NXP USA Inc.
RF POWER TRANSISTORS
BFQ67W,135
BFQ67W,135
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT323-3
BFR540,235
BFR540,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ TO236AB
BFG97,115
BFG97,115
NXP USA Inc.
RF TRANS NPN 15V 5.5GHZ SOT223
BFG520/XR,215
BFG520/XR,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143R
BFG21W,115
BFG21W,115
NXP USA Inc.
RF TRANS NPN 4.5V 18GHZ CMPAK-4
BFS17HTC
BFS17HTC
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BFS 17P E8211
BFS 17P E8211
Infineon Technologies
RF TRANS NPN SOT23-3

Related Product By Brand

BAT54S/6215
BAT54S/6215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
MKL27Z256VFM4
MKL27Z256VFM4
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 32QFN
LPC1114FHN33/301:5
LPC1114FHN33/301:5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
P89LPC935FA,129
P89LPC935FA,129
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28PLCC
MCIMX6S5EVM10AB
MCIMX6S5EVM10AB
NXP USA Inc.
IC MPU I.MX6S 1.0GHZ 624MAPBGA
TJA1041T/V,518
TJA1041T/V,518
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 14SO
SC16C554DBIA68,518
SC16C554DBIA68,518
NXP USA Inc.
IC UART QUAD 68PLCC
74HC259N,652
74HC259N,652
NXP USA Inc.
IC ADDRESSABLE LATCH 8BIT 16DIP
PCA24S08AD
PCA24S08AD
NXP USA Inc.
IC EEPROM 8KBIT 400KHZ 8SO
PCF7941ATSM2AB120,
PCF7941ATSM2AB120,
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20SSOP