BFU725F,115
  • Share:

NXP USA Inc. BFU725F,115

Manufacturer No:
BFU725F,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 2.8V 70GHZ 4DFP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXP BFU725F/N1,115 is an NPN silicon germanium (SiGe) microwave transistor designed for high-speed, low-noise applications. It is packaged in a plastic, 4-pin dual-emitter SOT343F package, making it suitable for a variety of RF and microwave circuits. This transistor is known for its excellent performance in amplification and switching roles, particularly in the frequency range from 1.5 GHz to 6 GHz.

Key Specifications

ParameterValueUnits
Frequency Range1.5 GHz - 6 GHzGHz
Output Power9 dBmdBm
Gain19 dBdB
PackageSOT343F (DFP4)
Supply Voltage10 VV
Collector Current (Id)25 to 40 mAmA
Noise Figure0.5 dBdB
MaterialSilicon Germanium (SiGe)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Peak Package Temperature260°C (30 sec.)°C

Key Features

  • High-speed and low-noise performance, making it ideal for RF and microwave applications.
  • Silicon Germanium (SiGe) technology for enhanced performance and reliability.
  • Wide frequency range of 1.5 GHz to 6 GHz.
  • High gain of 19 dB.
  • Low noise figure of 0.5 dB.
  • Compliant with EU RoHS, ELV, and China RoHS directives.
  • Halogen-free and lead-free packaging.

Applications

The BFU725F/N1,115 is suitable for various high-frequency applications, including:

  • RF amplifiers and switches.
  • Microwave circuits.
  • Wireless communication systems.
  • Radar and aerospace applications.
  • High-speed data transmission systems.

Q & A

  1. What is the frequency range of the BFU725F/N1,115 transistor?
    The frequency range is from 1.5 GHz to 6 GHz.
  2. What is the package type of the BFU725F/N1,115?
    The package type is SOT343F (DFP4).
  3. What is the supply voltage for the BFU725F/N1,115?
    The supply voltage is 10 V.
  4. What is the noise figure of the BFU725F/N1,115?
    The noise figure is 0.5 dB.
  5. Is the BFU725F/N1,115 compliant with RoHS directives?
    Yes, it is compliant with EU RoHS, ELV, and China RoHS directives.
  6. What material is used in the BFU725F/N1,115 transistor?
    The transistor is made of Silicon Germanium (SiGe).
  7. What is the moisture sensitivity level (MSL) of the BFU725F/N1,115?
    The MSL is 1 (Unlimited).
  8. What is the peak package temperature for the BFU725F/N1,115?
    The peak package temperature is 260°C for 30 seconds.
  9. What are some typical applications of the BFU725F/N1,115?
    Typical applications include RF amplifiers, microwave circuits, wireless communication systems, radar, and aerospace applications.
  10. Is the BFU725F/N1,115 halogen-free and lead-free?
    Yes, it is halogen-free and lead-free.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):2.8V
Frequency - Transition:70GHz
Noise Figure (dB Typ @ f):0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Gain:10dB ~ 24dB
Power - Max:136mW
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 10mA, 2V
Current - Collector (Ic) (Max):40mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343F
Supplier Device Package:4-DFP
0 Remaining View Similar

In Stock

-
569

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

2SC5226A-4-TL-E
2SC5226A-4-TL-E
onsemi
RF TRANS NPN 10V 7GHZ 3MCP
BFS17PE6327HTSA1
BFS17PE6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BFG540W,115
BFG540W,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ 4SO
BFG520,215
BFG520,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFQ540,115
BFQ540,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT89-3
BFR520T,115
BFR520T,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SC75
BFS17A,235
BFS17A,235
NXP USA Inc.
RF TRANS NPN 15V 2.8GHZ TO236AB
BFG425W,115
BFG425W,115
NXP USA Inc.
RF TRANS NPN 4.5V 25GHZ CMPAK-4
BFQ591,115
BFQ591,115
NXP USA Inc.
RF TRANS NPN 15V 7GHZ SOT89-3
BFR93A,235
BFR93A,235
NXP USA Inc.
RF TRANS NPN 12V 6GHZ TO236AB
BFS17SH6327XTSA1
BFS17SH6327XTSA1
Infineon Technologies
RF TRANS 2NPN 15V 1.4GHZ SOT363
PBR941B,215
PBR941B,215
NXP USA Inc.
RF TRANS NPN 10V 9GHZ TO236AB

Related Product By Brand

BAS216,115
BAS216,115
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
BFS17W,135
BFS17W,135
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
PCF85063TP/1Z
PCF85063TP/1Z
NXP USA Inc.
IC RTC CLK/CALENDAR I2C 8-SON
MIMXRT1176CVM8A
MIMXRT1176CVM8A
NXP USA Inc.
IC MCU 32BIT EXT MEM 289MAPBGA
LS1027AXE7PQA
LS1027AXE7PQA
NXP USA Inc.
LS1027A-1500 XT SEC
TJA1051T/3/1U
TJA1051T/3/1U
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
TDA7052BT/N1,112
TDA7052BT/N1,112
NXP USA Inc.
IC AMP CLASS AB MONO 550MW 8SO
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
PCA85133U/2DA/Q1Z
PCA85133U/2DA/Q1Z
NXP USA Inc.
IC DRVR 7 SEGMENT DIE
BGU7224X
BGU7224X
NXP USA Inc.
IC RF AMP ISM 2.4GHZ 6HXSON
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC