BFU725F,115
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NXP USA Inc. BFU725F,115

Manufacturer No:
BFU725F,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 2.8V 70GHZ 4DFP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NXP BFU725F/N1,115 is an NPN silicon germanium (SiGe) microwave transistor designed for high-speed, low-noise applications. It is packaged in a plastic, 4-pin dual-emitter SOT343F package, making it suitable for a variety of RF and microwave circuits. This transistor is known for its excellent performance in amplification and switching roles, particularly in the frequency range from 1.5 GHz to 6 GHz.

Key Specifications

ParameterValueUnits
Frequency Range1.5 GHz - 6 GHzGHz
Output Power9 dBmdBm
Gain19 dBdB
PackageSOT343F (DFP4)
Supply Voltage10 VV
Collector Current (Id)25 to 40 mAmA
Noise Figure0.5 dBdB
MaterialSilicon Germanium (SiGe)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Peak Package Temperature260°C (30 sec.)°C

Key Features

  • High-speed and low-noise performance, making it ideal for RF and microwave applications.
  • Silicon Germanium (SiGe) technology for enhanced performance and reliability.
  • Wide frequency range of 1.5 GHz to 6 GHz.
  • High gain of 19 dB.
  • Low noise figure of 0.5 dB.
  • Compliant with EU RoHS, ELV, and China RoHS directives.
  • Halogen-free and lead-free packaging.

Applications

The BFU725F/N1,115 is suitable for various high-frequency applications, including:

  • RF amplifiers and switches.
  • Microwave circuits.
  • Wireless communication systems.
  • Radar and aerospace applications.
  • High-speed data transmission systems.

Q & A

  1. What is the frequency range of the BFU725F/N1,115 transistor?
    The frequency range is from 1.5 GHz to 6 GHz.
  2. What is the package type of the BFU725F/N1,115?
    The package type is SOT343F (DFP4).
  3. What is the supply voltage for the BFU725F/N1,115?
    The supply voltage is 10 V.
  4. What is the noise figure of the BFU725F/N1,115?
    The noise figure is 0.5 dB.
  5. Is the BFU725F/N1,115 compliant with RoHS directives?
    Yes, it is compliant with EU RoHS, ELV, and China RoHS directives.
  6. What material is used in the BFU725F/N1,115 transistor?
    The transistor is made of Silicon Germanium (SiGe).
  7. What is the moisture sensitivity level (MSL) of the BFU725F/N1,115?
    The MSL is 1 (Unlimited).
  8. What is the peak package temperature for the BFU725F/N1,115?
    The peak package temperature is 260°C for 30 seconds.
  9. What are some typical applications of the BFU725F/N1,115?
    Typical applications include RF amplifiers, microwave circuits, wireless communication systems, radar, and aerospace applications.
  10. Is the BFU725F/N1,115 halogen-free and lead-free?
    Yes, it is halogen-free and lead-free.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):2.8V
Frequency - Transition:70GHz
Noise Figure (dB Typ @ f):0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Gain:10dB ~ 24dB
Power - Max:136mW
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 10mA, 2V
Current - Collector (Ic) (Max):40mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343F
Supplier Device Package:4-DFP
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