Overview
The PBR941,215 is a silicon NPN transistor produced by NXP USA Inc. It is packaged in a surface mount 3-pin SOT23 (TO-236AB) package. This transistor is primarily intended for wideband applications in the GHz range, particularly in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers, and satellite TV tuners.
Key Specifications
| Parameter | Conditions | Typical | Maximum | Unit |
|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | Open Emitter | - | 20 | V |
| Collector-Emitter Voltage (VCEO) | Open Base | - | 10 | V |
| Emitter-Base Voltage (VEBO) | Open Collector | - | 1.5 | V |
| Collector Current (IC) | - | - | 50 | mA |
| Average Collector Current (IC(AV)) | - | - | 50 | mA |
| Total Power Dissipation (Ptot) | Ts = 60 °C | - | 360 | mW |
| Transition Frequency (fT) | IC = 15 mA; VCE = 6 V; f = 1 GHz | - | 8 | GHz |
| Noise Figure (F) | ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 1 GHz | 1.4 | 2 | dB |
| Maximum Unilateral Power Gain (GUM) | IC = 15 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C | - | 15 | dB |
| Junction Temperature (Tj) | - | - | 175 | °C |
| Thermal Resistance (Rth j-s) | Ptot = 360 mW; Ts = 60 °C | - | 320 | K/W |
Key Features
- Small Size: Packaged in a compact SOT23 (TO-236AB) package, making it suitable for space-constrained designs.
- Low Noise: Offers a low noise figure, typically 1.4 dB at 1 GHz, ensuring high signal integrity.
- Low Distortion: Designed to minimize distortion, making it ideal for high-fidelity applications.
- High Gain: Provides a maximum unilateral power gain of 15 dB at 1 GHz.
- Gold Metallization: Ensures excellent reliability due to gold metallization.
Applications
- Communication Systems: Suitable for the RF front end of analog and digital cellular telephones, cordless phones, and pagers.
- Instrumentation Systems: Used in various instrumentation systems requiring high-frequency operation.
- Radar Detectors and Satellite TV Tuners: Ideal for applications in radar detectors and satellite TV tuners due to its high-frequency capabilities.
Q & A
- What is the primary application of the PBR941,215 transistor?
The PBR941,215 transistor is primarily intended for wideband applications in the GHz range, particularly in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers, and satellite TV tuners.
- What is the package type of the PBR941,215 transistor?
The PBR941,215 transistor is packaged in a surface mount 3-pin SOT23 (TO-236AB) package.
- What is the maximum collector current of the PBR941,215 transistor?
The maximum collector current (IC) of the PBR941,215 transistor is 50 mA.
- What is the typical noise figure of the PBR941,215 transistor at 1 GHz?
The typical noise figure of the PBR941,215 transistor at 1 GHz is 1.4 dB.
- What is the maximum unilateral power gain of the PBR941,215 transistor?
The maximum unilateral power gain (GUM) of the PBR941,215 transistor is 15 dB at 1 GHz.
- What is the junction temperature limit of the PBR941,215 transistor?
The junction temperature (Tj) limit of the PBR941,215 transistor is 175 °C.
- What is the total power dissipation limit of the PBR941,215 transistor?
The total power dissipation (Ptot) limit of the PBR941,215 transistor is 360 mW at a soldering point temperature (Ts) of 60 °C.
- Is the PBR941,215 transistor RoHS compliant?
Yes, the PBR941,215 transistor is RoHS compliant.
- What are the typical applications of the PBR941,215 transistor in communication systems?
The PBR941,215 transistor is used in the RF front end of analog and digital cellular telephones, cordless phones, and pagers.
- What is the significance of gold metallization in the PBR941,215 transistor?
The gold metallization ensures excellent reliability of the PBR941,215 transistor.
