Overview
The PBR951,215 is a silicon NPN transistor produced by NXP USA Inc., designed for wideband applications in the GHz range. This transistor is housed in a surface mount 3-pin SOT23 package, making it suitable for compact and high-frequency electronic systems. Although the PBR951 is no longer in production, it remains relevant for legacy systems and specific applications requiring its unique characteristics.
Key Specifications
| Parameter | Conditions | Typical | Maximum | Unit |
|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | Open Emitter | - | 20 | V |
| Collector-Emitter Voltage (VCEO) | Open Base | - | 10 | V |
| Emitter-Base Voltage (VEBO) | Open Collector | - | 1.5 | V |
| Collector Current (IC) | DC | - | 100 | mA |
| Average Collector Current (IC(AV)) | - | - | 100 | mA |
| Total Power Dissipation (Ptot) | Ts = 60 °C | - | 365 | mW |
| Transition Frequency (fT) | IC = 30 mA; VCE = 6 V; f = 1 GHz | 8 | - | GHz |
| Maximum Unilateral Power Gain (GUM) | IC = 30 mA; VCE = 6 V; Tamb = 25 °C; f = 1 GHz | 14 | - | dB |
| Noise Figure (NF) | ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 1 GHz | 1.3 | - | dB |
| Thermal Resistance (Rth j-s) | Ptot = 365 mW; Ts = 60 °C | 315 | - | K/W |
Key Features
- Small Size: The transistor is packaged in a compact SOT23 surface mount package, making it ideal for space-constrained designs.
- Low Noise and Distortion: It offers a low noise figure and low distortion, which are crucial for high-quality signal processing.
- High Gain: The PBR951 features high gain, particularly in the GHz range, making it suitable for amplification in RF applications.
- Gold Metallization: Gold metallization ensures excellent reliability and durability.
Applications
The PBR951,215 transistor is primarily intended for wideband applications in the RF front end of various systems, including:
- Cellular telephones
- Cordless phones
- Radar detectors
- Pagers
- Satellite TV tuners
- Communication and instrumentation systems
Q & A
- What is the package type of the PBR951,215 transistor?
The PBR951,215 transistor is packaged in a surface mount 3-pin SOT23 package. - What is the maximum collector current of the PBR951,215 transistor?
The maximum collector current (IC) is 100 mA. - What is the total power dissipation of the PBR951,215 transistor?
The total power dissipation (Ptot) is 365 mW at a soldering point temperature (Ts) of 60 °C. - What is the transition frequency of the PBR951,215 transistor?
The transition frequency (fT) is 8 GHz at IC = 30 mA and VCE = 6 V. - What is the noise figure of the PBR951,215 transistor?
The noise figure (NF) is typically 1.3 dB at IC = 5 mA, VCE = 6 V, and f = 1 GHz. - What are the typical applications of the PBR951,215 transistor?
The transistor is used in cellular telephones, cordless phones, radar detectors, pagers, satellite TV tuners, and communication and instrumentation systems. - Is the PBR951,215 transistor still in production?
No, the PBR951 is no longer manufactured but remains relevant for legacy systems and specific applications. - What is the thermal resistance of the PBR951,215 transistor?
The thermal resistance from junction to soldering point (Rth j-s) is 315 K/W. - What is the maximum junction temperature of the PBR951,215 transistor?
The maximum junction temperature (Tj) is 175 °C. - What are the key features of the PBR951,215 transistor?
The key features include small size, low noise and distortion, high gain, and gold metallization for reliability.
