Overview
The BFG325W/XR,115 is an NPN silicon planar epitaxial transistor manufactured by NXP USA Inc. This component is packaged in a 4-pin dual-emitter SOT343R plastic package. Although it is currently obsolete and no longer in production, it was designed for high-frequency applications, particularly in the RF domain. The transistor is known for its wideband capabilities, making it suitable for various high-frequency electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | - |
| Package | SOT343R | - |
| Operating Temperature (TJ) | 175 | °C |
| Maximum Power Dissipation | 210 | mW |
| DC Current Gain (hFE) @ Ic, Vce | 60 @ 15mA, 3V | - |
| Gain | 18.3 dB | - |
| Collector-Emitter Breakdown Voltage | 6 | V |
| Maximum Collector Current | 35 mA | - |
| Transition Frequency | 14 GHz | - |
| Noise Figure @ f | 1.1 dB @ 2 GHz | - |
| ROHS Status | ROHS3 Compliant | - |
Key Features
- High Frequency Capability: The BFG325W/XR,115 operates up to 14 GHz, making it suitable for high-frequency RF applications.
- Low Noise Figure: With a noise figure of 1.1 dB at 2 GHz, this transistor is ideal for applications requiring low noise performance.
- High Gain: It offers a gain of 18.3 dB, which is beneficial for amplification in RF circuits.
- Compact Packaging: The SOT343R package is compact and suitable for surface mount applications.
- ROHS Compliance: The transistor is ROHS3 compliant, ensuring environmental sustainability.
Applications
- RF Amplifiers: Suitable for use in RF amplifiers due to its high gain and low noise figure.
- High-Frequency Circuits: Ideal for applications requiring operation up to 14 GHz.
- Wireless Communication Systems: Can be used in wireless communication systems, such as cellular networks and satellite communications.
- Measurement Equipment: Useful in measurement equipment that requires high-frequency signal processing.
Q & A
- What is the transistor type of the BFG325W/XR,115?
The BFG325W/XR,115 is an NPN silicon planar epitaxial transistor.
- What is the maximum operating temperature of the BFG325W/XR,115?
The maximum operating temperature (TJ) is 175°C.
- What is the maximum power dissipation of the BFG325W/XR,115?
The maximum power dissipation is 210 mW.
- What is the transition frequency of the BFG325W/XR,115?
The transition frequency is 14 GHz.
- What is the noise figure of the BFG325W/XR,115 at 2 GHz?
The noise figure at 2 GHz is 1.1 dB.
- Is the BFG325W/XR,115 ROHS compliant?
Yes, the BFG325W/XR,115 is ROHS3 compliant.
- What is the package type of the BFG325W/XR,115?
The package type is SOT343R.
- What is the DC current gain (hFE) of the BFG325W/XR,115?
The DC current gain (hFE) is 60 at 15 mA and 3 V.
- Is the BFG325W/XR,115 still in production?
No, the BFG325W/XR,115 is obsolete and no longer manufactured.
- What are some typical applications of the BFG325W/XR,115?
Typical applications include RF amplifiers, high-frequency circuits, wireless communication systems, and measurement equipment.
