BFG325W/XR,115
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NXP USA Inc. BFG325W/XR,115

Manufacturer No:
BFG325W/XR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 6V 14GHZ CMPAK-4
Delivery:
Payment:
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Product Introduction

Overview

The BFG325W/XR,115 is an NPN silicon planar epitaxial transistor manufactured by NXP USA Inc. This component is packaged in a 4-pin dual-emitter SOT343R plastic package. Although it is currently obsolete and no longer in production, it was designed for high-frequency applications, particularly in the RF domain. The transistor is known for its wideband capabilities, making it suitable for various high-frequency electronic circuits.

Key Specifications

Parameter Value Unit
Transistor Type NPN -
Package SOT343R -
Operating Temperature (TJ) 175 °C
Maximum Power Dissipation 210 mW
DC Current Gain (hFE) @ Ic, Vce 60 @ 15mA, 3V -
Gain 18.3 dB -
Collector-Emitter Breakdown Voltage 6 V
Maximum Collector Current 35 mA -
Transition Frequency 14 GHz -
Noise Figure @ f 1.1 dB @ 2 GHz -
ROHS Status ROHS3 Compliant -

Key Features

  • High Frequency Capability: The BFG325W/XR,115 operates up to 14 GHz, making it suitable for high-frequency RF applications.
  • Low Noise Figure: With a noise figure of 1.1 dB at 2 GHz, this transistor is ideal for applications requiring low noise performance.
  • High Gain: It offers a gain of 18.3 dB, which is beneficial for amplification in RF circuits.
  • Compact Packaging: The SOT343R package is compact and suitable for surface mount applications.
  • ROHS Compliance: The transistor is ROHS3 compliant, ensuring environmental sustainability.

Applications

  • RF Amplifiers: Suitable for use in RF amplifiers due to its high gain and low noise figure.
  • High-Frequency Circuits: Ideal for applications requiring operation up to 14 GHz.
  • Wireless Communication Systems: Can be used in wireless communication systems, such as cellular networks and satellite communications.
  • Measurement Equipment: Useful in measurement equipment that requires high-frequency signal processing.

Q & A

  1. What is the transistor type of the BFG325W/XR,115?

    The BFG325W/XR,115 is an NPN silicon planar epitaxial transistor.

  2. What is the maximum operating temperature of the BFG325W/XR,115?

    The maximum operating temperature (TJ) is 175°C.

  3. What is the maximum power dissipation of the BFG325W/XR,115?

    The maximum power dissipation is 210 mW.

  4. What is the transition frequency of the BFG325W/XR,115?

    The transition frequency is 14 GHz.

  5. What is the noise figure of the BFG325W/XR,115 at 2 GHz?

    The noise figure at 2 GHz is 1.1 dB.

  6. Is the BFG325W/XR,115 ROHS compliant?

    Yes, the BFG325W/XR,115 is ROHS3 compliant.

  7. What is the package type of the BFG325W/XR,115?

    The package type is SOT343R.

  8. What is the DC current gain (hFE) of the BFG325W/XR,115?

    The DC current gain (hFE) is 60 at 15 mA and 3 V.

  9. Is the BFG325W/XR,115 still in production?

    No, the BFG325W/XR,115 is obsolete and no longer manufactured.

  10. What are some typical applications of the BFG325W/XR,115?

    Typical applications include RF amplifiers, high-frequency circuits, wireless communication systems, and measurement equipment.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):6V
Frequency - Transition:14GHz
Noise Figure (dB Typ @ f):1.1dB @ 2GHz
Gain:18.3dB
Power - Max:210mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 15mA, 3V
Current - Collector (Ic) (Max):35mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
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