Overview
The BFU550XR is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is packaged in a plastic, 4-pin dual-emitter SOT143R package. This transistor is suitable for small signal to medium power applications up to 2 GHz, making it a versatile component for various RF applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCB) | Open Emitter | - | - | 24 | V |
| Collector-Emitter Voltage (VCE) | Shorted Base | - | - | 24 | V |
| Emitter-Base Voltage (VEB) | Open Collector | - | - | 2 | V |
| Collector Current (IC) | - | - | 15 | 50 | mA |
| Total Power Dissipation (Ptot) | Tsp ≤ 87 °C | - | - | 450 | mW |
| DC Current Gain (hFE) | IC = 15 mA; VCE = 8 V | 60 | 95 | 200 | - |
| Transition Frequency (fT) | IC = 25 mA; VCE = 8 V; f = 900 MHz | - | 11 | - | GHz |
| Minimum Noise Figure (NFmin) | IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt | - | 0.7 | - | dB |
| Maximum Stable Gain (Gp(max)) | IC = 15 mA; VCE = 8 V; f = 900 MHz | - | 21.5 | - | dB |
Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified, ensuring automotive-grade reliability
- Minimum noise figure (NFmin) of 0.7 dB at 900 MHz
- Maximum stable gain of 21.5 dB at 900 MHz
- 11 GHz transition frequency (fT) silicon technology
- Operating temperature range from -40°C to +150°C
Applications
- Applications requiring high supply voltages and high breakdown voltages
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications
- ISM band oscillators
Q & A
- What is the BFU550XR transistor used for?
The BFU550XR is used for high-speed, low-noise applications in RF circuits, such as broadband amplifiers, low noise amplifiers, and ISM band oscillators.
- What is the package type of the BFU550XR transistor?
The BFU550XR transistor is packaged in a plastic, 4-pin dual-emitter SOT143R package.
- What is the maximum collector current of the BFU550XR transistor?
The maximum collector current (IC) of the BFU550XR transistor is 50 mA.
- What is the transition frequency (fT) of the BFU550XR transistor?
The transition frequency (fT) of the BFU550XR transistor is 11 GHz.
- What is the minimum noise figure (NFmin) of the BFU550XR transistor at 900 MHz?
The minimum noise figure (NFmin) of the BFU550XR transistor at 900 MHz is 0.7 dB.
- Is the BFU550XR transistor AEC-Q101 qualified?
Yes, the BFU550XR transistor is AEC-Q101 qualified, ensuring automotive-grade reliability.
- What is the operating temperature range of the BFU550XR transistor?
The operating temperature range of the BFU550XR transistor is from -40°C to +150°C.
- What are some typical applications of the BFU550XR transistor?
Typical applications include broadband amplifiers up to 2 GHz, low noise amplifiers for ISM applications, and ISM band oscillators.
- What is the maximum stable gain of the BFU550XR transistor at 900 MHz?
The maximum stable gain of the BFU550XR transistor at 900 MHz is 21.5 dB.
- What is the total power dissipation (Ptot) of the BFU550XR transistor?
The total power dissipation (Ptot) of the BFU550XR transistor is 450 mW.
