BFU550XR235
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NXP USA Inc. BFU550XR235

Manufacturer No:
BFU550XR235
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NPN RF TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU550XR is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is packaged in a plastic, 4-pin dual-emitter SOT143R package. This transistor is suitable for small signal to medium power applications up to 2 GHz, making it a versatile component for various RF applications.

Key Specifications

Parameter Conditions Min Typ Max Unit
Collector-Base Voltage (VCB) Open Emitter - - 24 V
Collector-Emitter Voltage (VCE) Shorted Base - - 24 V
Emitter-Base Voltage (VEB) Open Collector - - 2 V
Collector Current (IC) - - 15 50 mA
Total Power Dissipation (Ptot) Tsp ≤ 87 °C - - 450 mW
DC Current Gain (hFE) IC = 15 mA; VCE = 8 V 60 95 200 -
Transition Frequency (fT) IC = 25 mA; VCE = 8 V; f = 900 MHz - 11 - GHz
Minimum Noise Figure (NFmin) IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt - 0.7 - dB
Maximum Stable Gain (Gp(max)) IC = 15 mA; VCE = 8 V; f = 900 MHz - 21.5 - dB

Key Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified, ensuring automotive-grade reliability
  • Minimum noise figure (NFmin) of 0.7 dB at 900 MHz
  • Maximum stable gain of 21.5 dB at 900 MHz
  • 11 GHz transition frequency (fT) silicon technology
  • Operating temperature range from -40°C to +150°C

Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications
  • ISM band oscillators

Q & A

  1. What is the BFU550XR transistor used for?

    The BFU550XR is used for high-speed, low-noise applications in RF circuits, such as broadband amplifiers, low noise amplifiers, and ISM band oscillators.

  2. What is the package type of the BFU550XR transistor?

    The BFU550XR transistor is packaged in a plastic, 4-pin dual-emitter SOT143R package.

  3. What is the maximum collector current of the BFU550XR transistor?

    The maximum collector current (IC) of the BFU550XR transistor is 50 mA.

  4. What is the transition frequency (fT) of the BFU550XR transistor?

    The transition frequency (fT) of the BFU550XR transistor is 11 GHz.

  5. What is the minimum noise figure (NFmin) of the BFU550XR transistor at 900 MHz?

    The minimum noise figure (NFmin) of the BFU550XR transistor at 900 MHz is 0.7 dB.

  6. Is the BFU550XR transistor AEC-Q101 qualified?

    Yes, the BFU550XR transistor is AEC-Q101 qualified, ensuring automotive-grade reliability.

  7. What is the operating temperature range of the BFU550XR transistor?

    The operating temperature range of the BFU550XR transistor is from -40°C to +150°C.

  8. What are some typical applications of the BFU550XR transistor?

    Typical applications include broadband amplifiers up to 2 GHz, low noise amplifiers for ISM applications, and ISM band oscillators.

  9. What is the maximum stable gain of the BFU550XR transistor at 900 MHz?

    The maximum stable gain of the BFU550XR transistor at 900 MHz is 21.5 dB.

  10. What is the total power dissipation (Ptot) of the BFU550XR transistor?

    The total power dissipation (Ptot) of the BFU550XR transistor is 450 mW.

Product Attributes

Transistor Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Frequency - Transition:- 
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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