BFU760F,115
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NXP USA Inc. BFU760F,115

Manufacturer No:
BFU760F,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 2.8V 45GHZ 4DFP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU760F,115 is a high-performance RF small signal bipolar transistor manufactured by NXP USA Inc. This NPN transistor is designed for use in high-frequency applications, particularly in the radio frequency (RF) domain. It features a silicon germanium (SiGe) technology, which enhances its performance in terms of gain, frequency response, and power handling. The transistor is packaged in a SOT-343 case, making it suitable for surface mount applications.

Key Specifications

ParameterValue
MountSurface Mount
Case/PackageSOT-343
PolarityNPN
Collector Emitter Breakdown Voltage (VCEO)2.8V
Max Collector Current (Ic)70mA
Transition Frequency (fT)45GHz
Current Gain (hFE Min)155
Power Dissipation (Pd)220mW
Number of Pins4
Collector Base Voltage (VCBO)10V
Emitter Base Voltage (VEBO)1V
Max Operating Temperature150°C
Min Operating Temperature-65°C
Lead FreeYes
RoHS CompliantYes

Key Features

  • High Transition Frequency: The BFU760F,115 boasts a transition frequency of 45GHz, making it highly suitable for high-frequency RF applications.
  • High Current Gain: With a minimum current gain (hFE) of 155, this transistor offers excellent amplification capabilities.
  • Low Power Dissipation: The transistor has a maximum power dissipation of 220mW, which is efficient for many RF circuits.
  • Wide Operating Temperature Range: It can operate from -65°C to 150°C, making it versatile for various environmental conditions.
  • Lead-Free and RoHS Compliant: The component is lead-free and complies with RoHS standards, ensuring it meets environmental regulations.

Applications

The BFU760F,115 is ideal for a variety of high-frequency applications, including:

  • RF Amplifiers: Its high transition frequency and current gain make it suitable for amplifying RF signals.
  • Wireless Communication Systems: It can be used in wireless communication systems, such as cellular networks, Wi-Fi, and other RF communication devices.
  • Radar Systems: The transistor’s high frequency capabilities make it a good fit for radar systems and other high-frequency sensing applications.
  • Test and Measurement Equipment: It can be used in test and measurement equipment that require high-frequency signal processing.

Q & A

  1. What is the transition frequency of the BFU760F,115 transistor?
    The transition frequency of the BFU760F,115 transistor is 45GHz.
  2. What is the maximum collector current of the BFU760F,115?
    The maximum collector current is 70mA.
  3. What is the package type of the BFU760F,115?
    The package type is SOT-343.
  4. Is the BFU760F,115 lead-free and RoHS compliant?
    Yes, the BFU760F,115 is lead-free and RoHS compliant.
  5. What is the operating temperature range of the BFU760F,115?
    The operating temperature range is from -65°C to 150°C.
  6. What is the power dissipation of the BFU760F,115?
    The maximum power dissipation is 220mW.
  7. What is the current gain (hFE) of the BFU760F,115?
    The minimum current gain (hFE) is 155.
  8. What type of technology is used in the BFU760F,115 transistor?
    The transistor uses silicon germanium (SiGe) technology.
  9. What are some common applications of the BFU760F,115 transistor?
    Common applications include RF amplifiers, wireless communication systems, radar systems, and test and measurement equipment.
  10. How many pins does the BFU760F,115 transistor have?
    The transistor has 4 pins.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):2.8V
Frequency - Transition:45GHz
Noise Figure (dB Typ @ f):0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Gain:- 
Power - Max:220mW
DC Current Gain (hFE) (Min) @ Ic, Vce:155 @ 10mA, 2V
Current - Collector (Ic) (Max):70mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343F
Supplier Device Package:4-DFP
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Similar Products

Part Number BFU760F,115 BFU790F,115 BFU660F,115 BFU710F,115 BFU730F,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 2.8V 2.8V 5.5V 2.8V 2.8V
Frequency - Transition 45GHz 25GHz 21GHz 43GHz 55GHz
Noise Figure (dB Typ @ f) 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
Gain - - 12dB ~ 21dB - -
Power - Max 220mW 234mW 225mW 136mW 197mW
DC Current Gain (hFE) (Min) @ Ic, Vce 155 @ 10mA, 2V 235 @ 10mA, 2V 90 @ 10mA, 2V 200 @ 1mA, 2V 205 @ 2mA, 2V
Current - Collector (Ic) (Max) 70mA 100mA 60mA 10mA 30mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-343F SOT-343F SOT-343F SOT-343F SOT-343F
Supplier Device Package 4-DFP 4-DFP 4-DFP 4-DFP 4-DFP

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