Overview
The BFU760F,115 is a high-performance RF small signal bipolar transistor manufactured by NXP USA Inc. This NPN transistor is designed for use in high-frequency applications, particularly in the radio frequency (RF) domain. It features a silicon germanium (SiGe) technology, which enhances its performance in terms of gain, frequency response, and power handling. The transistor is packaged in a SOT-343 case, making it suitable for surface mount applications.
Key Specifications
| Parameter | Value |
|---|---|
| Mount | Surface Mount |
| Case/Package | SOT-343 |
| Polarity | NPN |
| Collector Emitter Breakdown Voltage (VCEO) | 2.8V |
| Max Collector Current (Ic) | 70mA |
| Transition Frequency (fT) | 45GHz |
| Current Gain (hFE Min) | 155 |
| Power Dissipation (Pd) | 220mW |
| Number of Pins | 4 |
| Collector Base Voltage (VCBO) | 10V |
| Emitter Base Voltage (VEBO) | 1V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Lead Free | Yes |
| RoHS Compliant | Yes |
Key Features
- High Transition Frequency: The BFU760F,115 boasts a transition frequency of 45GHz, making it highly suitable for high-frequency RF applications.
- High Current Gain: With a minimum current gain (hFE) of 155, this transistor offers excellent amplification capabilities.
- Low Power Dissipation: The transistor has a maximum power dissipation of 220mW, which is efficient for many RF circuits.
- Wide Operating Temperature Range: It can operate from -65°C to 150°C, making it versatile for various environmental conditions.
- Lead-Free and RoHS Compliant: The component is lead-free and complies with RoHS standards, ensuring it meets environmental regulations.
Applications
The BFU760F,115 is ideal for a variety of high-frequency applications, including:
- RF Amplifiers: Its high transition frequency and current gain make it suitable for amplifying RF signals.
- Wireless Communication Systems: It can be used in wireless communication systems, such as cellular networks, Wi-Fi, and other RF communication devices.
- Radar Systems: The transistor’s high frequency capabilities make it a good fit for radar systems and other high-frequency sensing applications.
- Test and Measurement Equipment: It can be used in test and measurement equipment that require high-frequency signal processing.
Q & A
- What is the transition frequency of the BFU760F,115 transistor?
The transition frequency of the BFU760F,115 transistor is 45GHz. - What is the maximum collector current of the BFU760F,115?
The maximum collector current is 70mA. - What is the package type of the BFU760F,115?
The package type is SOT-343. - Is the BFU760F,115 lead-free and RoHS compliant?
Yes, the BFU760F,115 is lead-free and RoHS compliant. - What is the operating temperature range of the BFU760F,115?
The operating temperature range is from -65°C to 150°C. - What is the power dissipation of the BFU760F,115?
The maximum power dissipation is 220mW. - What is the current gain (hFE) of the BFU760F,115?
The minimum current gain (hFE) is 155. - What type of technology is used in the BFU760F,115 transistor?
The transistor uses silicon germanium (SiGe) technology. - What are some common applications of the BFU760F,115 transistor?
Common applications include RF amplifiers, wireless communication systems, radar systems, and test and measurement equipment. - How many pins does the BFU760F,115 transistor have?
The transistor has 4 pins.
