Overview
The BFG135,115 is an NPN silicon planar epitaxial transistor produced by NXP USA Inc. This transistor is designed for wideband amplifier applications and is housed in a plastic SOT223 envelope. It features small emitter structures with integrated emitter-ballasting resistors, which ensure high output voltage capabilities at a low distortion level. The device's design also provides an excellent temperature profile due to the distribution of active areas across its surface.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 25 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | - | 15 | V |
| VEBO (Emitter-Base Voltage) | Open Collector | - | - | 2 | V |
| IC (DC Collector Current) | - | - | - | 150 | mA |
| Ptot (Total Power Dissipation) | Up to Ts = 145°C | - | - | 1 | W |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| Tj (Junction Temperature) | - | - | - | 175 | °C |
Key Features
- High-frequency operation up to 7 GHz, making it suitable for wideband amplifier applications.
- Integrated emitter-ballasting resistors to ensure high output voltage capabilities with low distortion.
- Excellent temperature profile due to the distribution of active areas across the device's surface.
- Housed in a plastic SOT223 envelope, providing a compact and reliable package.
- Low noise and high gain characteristics, ideal for RF and microwave applications.
Applications
- Wideband amplifiers in RF and microwave systems.
- High-frequency amplifiers in communication equipment.
- RF power amplifiers in various electronic devices.
- Test and measurement equipment requiring high-frequency amplification.
- Industrial and medical devices that need reliable high-frequency amplification.
Q & A
- What is the maximum collector-emitter voltage of the BFG135,115 transistor?
The maximum collector-emitter voltage (VCEO) is 15 V.
- What is the total power dissipation limit for the BFG135,115 transistor?
The total power dissipation (Ptot) is limited to 1 W up to a temperature of 145°C at the soldering point of the collector tab.
- What is the storage temperature range for the BFG135,115 transistor?
The storage temperature range (Tstg) is from -65°C to 150°C.
- What is the maximum junction temperature for the BFG135,115 transistor?
The maximum junction temperature (Tj) is 175°C.
- What type of package does the BFG135,115 transistor come in?
The transistor is housed in a plastic SOT223 envelope.
- Is the BFG135,115 transistor still in production?
No, the BFG135,115 transistor is obsolete and no longer manufactured.
- What are some typical applications of the BFG135,115 transistor?
Typical applications include wideband amplifiers in RF and microwave systems, high-frequency amplifiers in communication equipment, and RF power amplifiers in various electronic devices.
- What are the key features of the BFG135,115 transistor?
Key features include high-frequency operation up to 7 GHz, integrated emitter-ballasting resistors, and an excellent temperature profile.
- What is the maximum DC collector current for the BFG135,115 transistor?
The maximum DC collector current (IC) is 150 mA.
- What is the collector-base voltage limit for the BFG135,115 transistor?
The collector-base voltage (VCBO) limit is 25 V.
