Overview
The onsemi MMBT918LT1G is a high-performance NPN bipolar junction transistor (BJT) designed for use in VHF/UHF applications. This transistor is packaged in a compact 3-pin SOT-23 package, making it ideal for space-constrained designs. It is known for its low noise and high gain characteristics, which are crucial for radio frequency (RF) and other high-frequency applications.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Base Voltage (VCBO) | 30 V |
| Emitter-Base Voltage (VEBO) | 3 V |
| Collector-Emitter Voltage (VCE) | 15 V |
| Collector Current (IC) | 50 mA |
| Power Dissipation (Pd) | 225 mW |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 400 mV |
| Junction and Storage Temperature | −55 to +150 °C |
Key Features
- High-frequency operation suitable for VHF/UHF applications
- Low noise and high gain characteristics
- Compact 3-pin SOT-23 package for space-saving designs
- Low collector-emitter saturation voltage (VCE(sat)) of 400 mV
- High collector-base voltage (VCBO) of 30 V
- RoHS compliant
Applications
The onsemi MMBT918LT1G is designed for use in various high-frequency applications, including:
- Radio Frequency (RF) amplifiers and circuits
- VHF and UHF transceivers
- Audio amplifiers requiring low noise and high gain
- General-purpose switching and amplification in electronic circuits
Q & A
- What is the package type of the MMBT918LT1G transistor?
The MMBT918LT1G transistor is packaged in a 3-pin SOT-23 package. - What is the maximum collector current of the MMBT918LT1G?
The maximum collector current is 50 mA. - What is the collector-emitter voltage (VCE) rating of the MMBT918LT1G?
The collector-emitter voltage (VCE) rating is 15 V. - What is the power dissipation (Pd) of the MMBT918LT1G?
The power dissipation (Pd) is 225 mW. - Is the MMBT918LT1G RoHS compliant?
Yes, the MMBT918LT1G is RoHS compliant. - What is the junction and storage temperature range for the MMBT918LT1G?
The junction and storage temperature range is −55 to +150 °C. - What are the typical applications of the MMBT918LT1G transistor?
The MMBT918LT1G is typically used in VHF/UHF applications, RF amplifiers, and general-purpose switching and amplification. - What is the collector-base voltage (VCBO) rating of the MMBT918LT1G?
The collector-base voltage (VCBO) rating is 30 V. - What is the emitter-base voltage (VEBO) rating of the MMBT918LT1G?
The emitter-base voltage (VEBO) rating is 3 V. - What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT918LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 400 mV.
