BFG520/XR,235
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NXP USA Inc. BFG520/XR,235

Manufacturer No:
BFG520/XR,235
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 9GHZ SOT143R
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The BFG520/XR,235 is a high-performance NPN silicon planar epitaxial transistor designed by NXP USA Inc. for applications in the RF frontend, particularly in the GHz frequency range. This transistor is encapsulated in a 4-pin, dual-emitter plastic SOT143R package, ensuring excellent reliability and performance in various high-frequency applications.

Key Specifications

ParameterValueUnit
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.1 ~ 2.1 @ 900MHzdB
Gain - Power - Max300mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 20mA, 6V
Current - Collector (Ic) (Max)70mA
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT143R

Key Features

  • High power gain
  • Low noise figure
  • High transition frequency of 9 GHz
  • Gold metallization for excellent reliability
  • Dual-emitter configuration in SOT143R package

Applications

The BFG520/XR,235 transistor is intended for various high-frequency applications, including:

  • Analog and digital cellular telephones
  • Cordless telephones (CT1, CT2, DECT, etc.)
  • Radar detectors
  • Pagers
  • Satellite TV tuners (SATV)
  • Repeater amplifiers in fibre-optic systems

Q & A

  1. What is the maximum collector-emitter voltage of the BFG520/XR,235 transistor?
    The maximum collector-emitter voltage is 15V.
  2. What is the transition frequency of the BFG520/XR,235 transistor?
    The transition frequency is 9 GHz.
  3. What is the typical noise figure of the BFG520/XR,235 transistor at 900 MHz?
    The typical noise figure is between 1.1 dB and 2.1 dB at 900 MHz.
  4. What is the maximum power gain of the BFG520/XR,235 transistor?
    The maximum power gain is 300 mW.
  5. What is the minimum DC current gain (hFE) of the BFG520/XR,235 transistor?
    The minimum DC current gain (hFE) is 60 at 20 mA and 6 V.
  6. What is the maximum collector current of the BFG520/XR,235 transistor?
    The maximum collector current is 70 mA.
  7. What is the operating temperature range of the BFG520/XR,235 transistor?
    The operating temperature range is up to 175°C (TJ).
  8. What type of package does the BFG520/XR,235 transistor use?
    The transistor is encapsulated in a 4-pin, dual-emitter plastic SOT143R package.
  9. Is the BFG520/XR,235 transistor RoHS compliant?
    Yes, the BFG520/XR,235 transistor is RoHS compliant.
  10. What are some common applications of the BFG520/XR,235 transistor?
    Common applications include analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and satellite TV tuners.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.1dB ~ 2.1dB @ 900MHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 20mA, 6V
Current - Collector (Ic) (Max):70mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-143R
Supplier Device Package:SOT-143R
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Similar Products

Part Number BFG520/XR,235 BFG520/X,235 BFG520/XR,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V
Frequency - Transition 9GHz 9GHz 9GHz
Noise Figure (dB Typ @ f) 1.1dB ~ 2.1dB @ 900MHz 1.1dB ~ 2.1dB @ 900MHz 1.1dB ~ 2.1dB @ 900MHz
Gain - - -
Power - Max 300mW 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA, 6V 60 @ 20mA, 6V 60 @ 20mA, 6V
Current - Collector (Ic) (Max) 70mA 70mA 70mA
Operating Temperature 175°C (TJ) 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-143R TO-253-4, TO-253AA SOT-143R
Supplier Device Package SOT-143R SOT-143B SOT-143R

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