BFG540,215
  • Share:

NXP USA Inc. BFG540,215

Manufacturer No:
BFG540,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 9GHZ SOT143B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFG540,215 is a high-performance RF NPN bipolar transistor manufactured by NXP USA Inc. This transistor is designed for wideband applications, particularly in the radio frequency (RF) domain. It is known for its high frequency transition and low noise figure, making it suitable for various RF and microwave applications. Despite being marked as obsolete, it remains a significant component in legacy systems and specific niche applications.

Key Specifications

Parameter Value
Voltage - Collector Emitter Breakdown (Max) 15V
Noise Figure (dB Typ @ f) 1.3dB ~ 1.8dB @ 900MHz
Operating Temperature 150°C (TJ)
Package / Case SOT-143B, TO-253-4, TO-253AA
Transistor Type NPN
Frequency - Transition 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 40mA, 8V
Current - Collector (Ic) (Max) 120mA
Power - Max 400mW
Mounting Type Surface Mount
RoHS Status Lead free, RoHS compliant

Key Features

  • High frequency transition of 9GHz, making it suitable for wideband RF applications.
  • Low noise figure of 1.3dB ~ 1.8dB at 900MHz, enhancing signal quality.
  • Maximum collector-emitter breakdown voltage of 15V.
  • Maximum collector current of 120mA and maximum power dissipation of 400mW.
  • Surface mount package (SOT-143B) with a compact size, ideal for modern RF circuits.
  • Compliant with RoHS and lead-free, ensuring environmental sustainability.

Applications

  • RF amplifiers and oscillators in wireless communication systems.
  • Microwave and RF circuits requiring high frequency and low noise performance.
  • Legacy systems and maintenance of existing RF equipment.
  • Research and development in RF and microwave engineering.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BFG540,215?

    The maximum collector-emitter breakdown voltage is 15V.

  2. What is the noise figure of the BFG540,215 at 900MHz?

    The noise figure is 1.3dB ~ 1.8dB at 900MHz.

  3. What is the maximum operating temperature of the BFG540,215?

    The maximum operating temperature is 150°C (TJ).

  4. What is the package type of the BFG540,215?

    The package type is SOT-143B, with options for TO-253-4 and TO-253AA.

  5. Is the BFG540,215 RoHS compliant?

    Yes, the BFG540,215 is lead-free and RoHS compliant.

  6. What is the maximum collector current of the BFG540,215?

    The maximum collector current is 120mA.

  7. What is the maximum power dissipation of the BFG540,215?

    The maximum power dissipation is 400mW.

  8. What is the frequency transition of the BFG540,215?

    The frequency transition is 9GHz.

  9. What is the DC current gain (hFE) of the BFG540,215?

    The DC current gain (hFE) is 60 at 40mA and 8V.

  10. Is the BFG540,215 still in production?

    No, the BFG540,215 is marked as obsolete.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.3dB ~ 1.8dB @ 900MHz
Gain:- 
Power - Max:400mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 40mA, 8V
Current - Collector (Ic) (Max):120mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:SOT-143B
0 Remaining View Similar

In Stock

-
311

Please send RFQ , we will respond immediately.

Same Series
BFG540/X,215
BFG540/X,215
RF TRANS NPN 15V 9GHZ SOT143B
BFG540/XR,215
BFG540/XR,215
RF TRANS NPN 15V 9GHZ SOT143R

Similar Products

Part Number BFG540,215 BFG590,215 BFG520,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V
Frequency - Transition 9GHz 5GHz 9GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 1.8dB @ 900MHz - 1.1dB ~ 2.1dB @ 900MHz
Gain - - -
Power - Max 400mW 400mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 40mA, 8V 60 @ 70mA, 8V 60 @ 20mA, 6V
Current - Collector (Ic) (Max) 120mA 200mA 70mA
Operating Temperature 150°C (TJ) 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-253-4, TO-253AA TO-253-4, TO-253AA TO-253-4, TO-253AA
Supplier Device Package SOT-143B SOT-143B SOT-143B

Related Product By Categories

BFS17NTA
BFS17NTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23-3
BFU550AR
BFU550AR
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
BFU550R
BFU550R
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BFU550XRR215
BFU550XRR215
NXP USA Inc.
NPN RF TRANSISTOR
BFU520YF
BFU520YF
NXP USA Inc.
RF TRANS 2 NPN 12V 10GHZ SOT363
BFQ67W,135
BFQ67W,135
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT323-3
BFG310/XR,215
BFG310/XR,215
NXP USA Inc.
RF TRANS NPN 6V 14GHZ SOT143R
BFT93,215
BFT93,215
NXP USA Inc.
RF TRANS PNP 12V 5GHZ TO236AB
BFS17,235
BFS17,235
NXP USA Inc.
RF TRANS NPN 15V 1GHZ TO236AB
BFS520,115
BFS520,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
BFG21W,115
BFG21W,115
NXP USA Inc.
RF TRANS NPN 4.5V 18GHZ CMPAK-4
BFR 93AW E6327
BFR 93AW E6327
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3

Related Product By Brand

BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BAT54S/6215
BAT54S/6215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PDZ24B/ZLX
PDZ24B/ZLX
NXP USA Inc.
DIODE ZENER SOD323
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
LPC1315FBD48,551
LPC1315FBD48,551
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
SPC5604BF2VLL4
SPC5604BF2VLL4
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 100LQFP
SPC5777CCK3MME3
SPC5777CCK3MME3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 416MAPBGA
TJA1042T/3,118
TJA1042T/3,118
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
TDA7052BT/N1,112
TDA7052BT/N1,112
NXP USA Inc.
IC AMP CLASS AB MONO 550MW 8SO
UJA1061TW/5V0/C/T518
UJA1061TW/5V0/C/T518
NXP USA Inc.
FAULT-TOLERANT CAN/LIN FAIL-SAFE