BFG540,215
  • Share:

NXP USA Inc. BFG540,215

Manufacturer No:
BFG540,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 9GHZ SOT143B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFG540,215 is a high-performance RF NPN bipolar transistor manufactured by NXP USA Inc. This transistor is designed for wideband applications, particularly in the radio frequency (RF) domain. It is known for its high frequency transition and low noise figure, making it suitable for various RF and microwave applications. Despite being marked as obsolete, it remains a significant component in legacy systems and specific niche applications.

Key Specifications

Parameter Value
Voltage - Collector Emitter Breakdown (Max) 15V
Noise Figure (dB Typ @ f) 1.3dB ~ 1.8dB @ 900MHz
Operating Temperature 150°C (TJ)
Package / Case SOT-143B, TO-253-4, TO-253AA
Transistor Type NPN
Frequency - Transition 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 40mA, 8V
Current - Collector (Ic) (Max) 120mA
Power - Max 400mW
Mounting Type Surface Mount
RoHS Status Lead free, RoHS compliant

Key Features

  • High frequency transition of 9GHz, making it suitable for wideband RF applications.
  • Low noise figure of 1.3dB ~ 1.8dB at 900MHz, enhancing signal quality.
  • Maximum collector-emitter breakdown voltage of 15V.
  • Maximum collector current of 120mA and maximum power dissipation of 400mW.
  • Surface mount package (SOT-143B) with a compact size, ideal for modern RF circuits.
  • Compliant with RoHS and lead-free, ensuring environmental sustainability.

Applications

  • RF amplifiers and oscillators in wireless communication systems.
  • Microwave and RF circuits requiring high frequency and low noise performance.
  • Legacy systems and maintenance of existing RF equipment.
  • Research and development in RF and microwave engineering.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BFG540,215?

    The maximum collector-emitter breakdown voltage is 15V.

  2. What is the noise figure of the BFG540,215 at 900MHz?

    The noise figure is 1.3dB ~ 1.8dB at 900MHz.

  3. What is the maximum operating temperature of the BFG540,215?

    The maximum operating temperature is 150°C (TJ).

  4. What is the package type of the BFG540,215?

    The package type is SOT-143B, with options for TO-253-4 and TO-253AA.

  5. Is the BFG540,215 RoHS compliant?

    Yes, the BFG540,215 is lead-free and RoHS compliant.

  6. What is the maximum collector current of the BFG540,215?

    The maximum collector current is 120mA.

  7. What is the maximum power dissipation of the BFG540,215?

    The maximum power dissipation is 400mW.

  8. What is the frequency transition of the BFG540,215?

    The frequency transition is 9GHz.

  9. What is the DC current gain (hFE) of the BFG540,215?

    The DC current gain (hFE) is 60 at 40mA and 8V.

  10. Is the BFG540,215 still in production?

    No, the BFG540,215 is marked as obsolete.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.3dB ~ 1.8dB @ 900MHz
Gain:- 
Power - Max:400mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 40mA, 8V
Current - Collector (Ic) (Max):120mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:SOT-143B
0 Remaining View Similar

In Stock

-
311

Please send RFQ , we will respond immediately.

Same Series
BFG540,215
BFG540,215
RF TRANS NPN 15V 9GHZ SOT143B
BFG540/XR,215
BFG540/XR,215
RF TRANS NPN 15V 9GHZ SOT143R

Similar Products

Part Number BFG540,215 BFG590,215 BFG520,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V
Frequency - Transition 9GHz 5GHz 9GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 1.8dB @ 900MHz - 1.1dB ~ 2.1dB @ 900MHz
Gain - - -
Power - Max 400mW 400mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 40mA, 8V 60 @ 70mA, 8V 60 @ 20mA, 6V
Current - Collector (Ic) (Max) 120mA 200mA 70mA
Operating Temperature 150°C (TJ) 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-253-4, TO-253AA TO-253-4, TO-253AA TO-253-4, TO-253AA
Supplier Device Package SOT-143B SOT-143B SOT-143B

Related Product By Categories

BFR93AWH6327XTSA1
BFR93AWH6327XTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3
BFU730F,115
BFU730F,115
NXP USA Inc.
RF TRANS NPN 2.8V 55GHZ 4DFP
BFU760F,115
BFU760F,115
NXP USA Inc.
RF TRANS NPN 2.8V 45GHZ 4DFP
BLT81
BLT81
NXP USA Inc.
RF SMALL SIGNAL BIPOLAR TRANSIST
BFU550VL
BFU550VL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BLT50,115
BLT50,115
NXP USA Inc.
RF TRANS NPN 10V 470MHZ SOT223
BFG97,115
BFG97,115
NXP USA Inc.
RF TRANS NPN 15V 5.5GHZ SOT223
BFT92W,115
BFT92W,115
NXP USA Inc.
RF TRANS PNP 15V 4GHZ SOT323-3
BFR520,235
BFR520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ TO236AB
BFG520/XR,235
BFG520/XR,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143R
BFT93W,115
BFT93W,115
NXP USA Inc.
RF TRANS PNP 12V 4GHZ SOT323-3
MMBTH10LT1
MMBTH10LT1
onsemi
TRANS SS VHF NPN 25V SOT23

Related Product By Brand

BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
S9S12G128AMLH
S9S12G128AMLH
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 64LQFP
MKL04Z32VLF4
MKL04Z32VLF4
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
LPC11E67JBD48E
LPC11E67JBD48E
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
74HC4852D,112
74HC4852D,112
NXP USA Inc.
74HC4852D - DIFFERENTIAL MULTIP
SC16C554DBIA68,518
SC16C554DBIA68,518
NXP USA Inc.
IC UART QUAD 68PLCC
74LVC2G32DC-Q100125
74LVC2G32DC-Q100125
NXP USA Inc.
OR GATE, LVC/LCX/Z SERIES
MC33664ATL1EGR2
MC33664ATL1EGR2
NXP USA Inc.
TRANSFORMER PHYSICAL LAYER
MMPF0100F9AZES
MMPF0100F9AZES
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56QFN
PCA24S08AD
PCA24S08AD
NXP USA Inc.
IC EEPROM 8KBIT 400KHZ 8SO
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN