BFS520,115
  • Share:

NXP USA Inc. BFS520,115

Manufacturer No:
BFS520,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 9GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFS520,115 is a high-frequency RF transistor manufactured by NXP USA Inc. This NPN bipolar junction transistor (BJT) is designed for use in high-frequency applications, making it suitable for various communication systems and RF front-end circuits. The transistor is packaged in a SC-70 (SOT-323) surface-mount package, which is compact and ideal for modern electronic designs.

Key Specifications

ParameterValue
Part NumberBFS520,115
CategoryTransistors - Bipolar (BJT) - RF
ManufacturerNXP USA Inc.
DescriptionRF TRANS NPN 15V 9GHZ SOT323-3
Package / CaseSC-70, SOT-323
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Power - Max300mW
Transistor TypeNPN
Current - Collector (Ic) (Max)70mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 20mA, 6V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.1dB ~ 2.1dB @ 900MHz

Key Features

  • High-frequency performance: Optimized for frequencies up to 9 GHz, making it suitable for RF amplifiers, oscillators, mixers, and other high-frequency applications.
  • Low noise figure: With a noise figure ranging from 1.1dB to 2.1dB at 900MHz, this transistor is ideal for noise-sensitive RF circuits.
  • Compact packaging: The SC-70 (SOT-323) package is small and surface-mountable, facilitating integration into modern electronic designs.
  • High gain-bandwidth product: Ensures high gain and fast transition times, critical for high-frequency applications.
  • Lead-free and RoHS compliant: Meets environmental and regulatory standards.

Applications

The BFS520,115 is used in a variety of high-frequency applications, including:

  • RF amplifiers and oscillators in communication systems.
  • RF front-end circuits in wireless communication devices.
  • Mixers and other high-frequency signal processing circuits.
  • Wireless communication systems such as cellular networks, Wi-Fi, and Bluetooth devices.

Q & A

  1. What is the BFS520,115 used for?
    The BFS520,115 is used in high-frequency applications, including RF amplifiers, oscillators, mixers, and RF front-end circuits in communication systems.
  2. What is the package type of the BFS520,115?
    The BFS520,115 is packaged in a SC-70 (SOT-323) surface-mount package.
  3. What is the maximum operating temperature of the BFS520,115?
    The maximum operating temperature (TJ) is 175°C.
  4. What is the maximum collector current of the BFS520,115?
    The maximum collector current (Ic) is 70mA.
  5. What is the collector-emitter breakdown voltage of the BFS520,115?
    The collector-emitter breakdown voltage is 15V.
  6. What is the transition frequency of the BFS520,115?
    The transition frequency is 9GHz.
  7. Is the BFS520,115 lead-free and RoHS compliant?
    Yes, the BFS520,115 is lead-free and RoHS compliant.
  8. What is the noise figure of the BFS520,115 at 900MHz?
    The noise figure at 900MHz ranges from 1.1dB to 2.1dB.
  9. How does the BFS520,115 differ from standard BJTs?
    The BFS520,115 is optimized for high-frequency performance with lower capacitance, faster transition times, and a higher gain-bandwidth product compared to standard BJTs.
  10. What are some common applications of RF BJTs like the BFS520,115?
    RF BJTs are commonly used in RF amplifiers, oscillators, mixers, and RF front-end circuits in communication systems.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.1dB ~ 2.1dB @ 900MHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 20mA, 6V
Current - Collector (Ic) (Max):70mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
0 Remaining View Similar

In Stock

-
463

Please send RFQ , we will respond immediately.

Same Series
BFS520,115
BFS520,115
RF TRANS NPN 15V 9GHZ SOT323-3

Similar Products

Part Number BFS520,115 BFS520,135 BFS540,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V
Frequency - Transition 9GHz 9GHz 9GHz
Noise Figure (dB Typ @ f) 1.1dB ~ 2.1dB @ 900MHz 1.1dB ~ 2.1dB @ 900MHz 1.3dB ~ 1.7dB @ 9MHz
Gain - - -
Power - Max 300mW 300mW 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA, 6V 60 @ 20mA, 6V 100 @ 40mA, 8V
Current - Collector (Ic) (Max) 70mA 70mA 120mA
Operating Temperature 175°C (TJ) 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70 SC-70

Related Product By Categories

BFU520XAR
BFU520XAR
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
MMBT918LT1G
MMBT918LT1G
onsemi
RF TRANS NPN 15V 600MHZ SOT23-3
BFU580QX
BFU580QX
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT89-3
BFU520XVL
BFU520XVL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFG505/X,215
BFG505/X,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFQ67,215
BFQ67,215
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
BFG520/XR,215
BFG520/XR,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143R
BFS520,115
BFS520,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
BFM505,115
BFM505,115
NXP USA Inc.
RF TRANS 2 NPN 8V 9GHZ 6TSSOP
BFR 93AW E6327
BFR 93AW E6327
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3
BFS 17P E6433
BFS 17P E6433
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BFS17WE6327HTSA1
BFS17WE6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BAT54S/6215
BAT54S/6215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BC817DPN/DG/B2115
BC817DPN/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2N7002T,215
2N7002T,215
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
NX3L1G3157GM,115
NX3L1G3157GM,115
NXP USA Inc.
IC SWITCH SPDT 6XSON
PCAL6416AER
PCAL6416AER
NXP USA Inc.
PARALLEL I/O PORT, 16 I/O, CMOS,
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
MC33664ATL1EGR2
MC33664ATL1EGR2
NXP USA Inc.
TRANSFORMER PHYSICAL LAYER
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
MPX5010GP
MPX5010GP
NXP USA Inc.
SENSOR GAUGE PRESS 1.45 PSI MAX