BFT93,215
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NXP USA Inc. BFT93,215

Manufacturer No:
BFT93,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS PNP 12V 5GHZ TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The BFT93,215 is a PNP transistor manufactured by NXP USA Inc., designed for high-frequency applications. This transistor is housed in a TO-236AB (SOT23) package and is primarily intended for use in RF wideband amplifiers, such as those found in aerial amplifiers, radar systems, oscilloscopes, and spectrum analyzers. It features low intermodulation distortion and high power gain, making it suitable for a wide range of high-frequency applications.

Key Specifications

Parameter Value Unit
Manufacturer Part Number BFT93,215
Manufacturer NXP Semiconductors / Freescale
Description TRANS PNP 12V 5GHZ SOT-23
Package / Case TO-236AB (SOT23)
Voltage - Collector Emitter Breakdown (Max) 12V V
Transistor Type PNP
Power - Max 300mW mW
Operating Temperature -65°C to 150°C °C
Junction Temperature 175°C °C
Noise Figure (dB Typ @ f) 2.4dB @ 500MHz dB
Frequency - Transition 5GHz GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 30mA, 5V
Current - Collector (Ic) (Max) 35mA mA

Key Features

  • High transition frequency of 5 GHz, making it suitable for high-frequency applications.
  • Low intermodulation distortion and high power gain.
  • Low noise up to high frequencies.
  • Surface mount package (TO-236AB / SOT23) for easy integration into modern designs.
  • Operating temperature range from -65°C to 150°C, with a junction temperature of up to 175°C.

Applications

  • RF wideband amplifiers.
  • Aerial amplifiers.
  • Radar systems.
  • Oscilloscopes.
  • Spectrum analyzers.

Q & A

  1. What is the BFT93,215 transistor used for?

    The BFT93,215 is primarily used in RF wideband amplifiers, such as those in aerial amplifiers, radar systems, oscilloscopes, and spectrum analyzers.

  2. What is the package type of the BFT93,215 transistor?

    The BFT93,215 is housed in a TO-236AB (SOT23) package.

  3. What is the maximum collector-emitter voltage of the BFT93,215?

    The maximum collector-emitter voltage (VCEO) is 12V.

  4. What is the maximum power dissipation of the BFT93,215?

    The maximum power dissipation (Ptot) is 300mW.

  5. What is the transition frequency of the BFT93,215?

    The transition frequency (fT) is 5GHz.

  6. What is the minimum DC current gain (hFE) of the BFT93,215?

    The minimum DC current gain (hFE) is 20 at 30mA and 5V.

  7. What is the maximum collector current of the BFT93,215?

    The maximum collector current (Ic) is 35mA.

  8. What is the noise figure of the BFT93,215 at 500MHz?

    The noise figure is typically 2.4dB at 500MHz.

  9. Is the BFT93,215 suitable for high-temperature applications?

    Yes, it has an operating temperature range from -65°C to 150°C and a junction temperature of up to 175°C.

  10. Is the BFT93,215 still in production?

    No, the BFT93,215 is no longer manufactured by NXP Semiconductors.

Product Attributes

Transistor Type:PNP
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:5GHz
Noise Figure (dB Typ @ f):2.4dB @ 500MHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 30mA, 5V
Current - Collector (Ic) (Max):35mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
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Similar Products

Part Number BFT93,215 BFT92,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 12V 15V
Frequency - Transition 5GHz 5GHz
Noise Figure (dB Typ @ f) 2.4dB @ 500MHz 2.5dB @ 500MHz
Gain - -
Power - Max 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 30mA, 5V 20 @ 14mA, 10V
Current - Collector (Ic) (Max) 35mA 25mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB)

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