MMBTH10-4LT1G
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onsemi MMBTH10-4LT1G

Manufacturer No:
MMBTH10-4LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 25V 800MHZ SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTH10-4LT1G is a high-performance NPN bipolar transistor from ON Semiconductor, designed for VHF and UHF applications. This transistor is part of the MMBTH10 series and is known for its robust performance and reliability. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 25 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 3.0 Vdc
Transition Frequency fT 650 - 800 MHz
Power Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Thermal Resistance, Junction to Ambient (FR-5 Board) RθJA 556 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
DC Current Gain (IC = 4.0 mA, VCE = 10 V) hFE 60 - 240
Collector-Emitter Saturation Voltage (IC = 4.0 mA, IB = 0.4 mA) VCE(sat) 0.5 Vdc

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • High Transition Frequency: Up to 800 MHz, making it ideal for high-frequency applications.
  • Low Collector-Emitter Saturation Voltage: 0.5 Vdc, which enhances efficiency in switching applications.
  • Compact Package: Available in a space-saving SOT-23 package for easy integration.
  • Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

  • VHF and UHF Applications: Suitable for use in VHF and UHF circuits due to its high transition frequency.
  • RF Amplifiers: Used in RF amplifiers for signal amplification.
  • Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive applications.
  • Low Voltage Switching: Ideal for low voltage applications like battery-operated devices.

Q & A

  1. What is the collector-emitter voltage rating of the MMBTH10-4LT1G?

    The collector-emitter voltage rating is 25 Vdc.

  2. What is the transition frequency of the MMBTH10-4LT1G?

    The transition frequency ranges from 650 to 800 MHz.

  3. Is the MMBTH10-4LT1G RoHS compliant?

    Yes, the MMBTH10-4LT1G is RoHS compliant, Pb-free, and halogen-free/BFR-free.

  4. What is the power dissipation of the MMBTH10-4LT1G on an FR-5 board at 25°C?

    The power dissipation is 225 mW.

  5. What is the thermal resistance, junction to ambient, for the MMBTH10-4LT1G on an FR-5 board?

    The thermal resistance is 556 °C/W.

  6. What is the DC current gain of the MMBTH10-4LT1G?

    The DC current gain (hFE) ranges from 60 to 240.

  7. What is the collector-emitter saturation voltage of the MMBTH10-4LT1G?

    The collector-emitter saturation voltage is 0.5 Vdc.

  8. In what package is the MMBTH10-4LT1G available?

    The MMBTH10-4LT1G is available in a SOT-23 package.

  9. Is the MMBTH10-4LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  10. What are some common applications of the MMBTH10-4LT1G?

    Common applications include VHF and UHF circuits, RF amplifiers, and low voltage switching in battery-operated devices.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):25V
Frequency - Transition:800MHz
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:225mW
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 4mA, 10V
Current - Collector (Ic) (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBTH10-4LT1G MMBTH10-4LT1
Manufacturer onsemi onsemi
Product Status Active Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 25V 25V
Frequency - Transition 800MHz 800MHz
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max 225mW 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 4mA, 10V 120 @ 4mA, 10V
Current - Collector (Ic) (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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