Overview
The BFG425W,135 is an NPN 25 GHz wideband transistor manufactured by NXP USA Inc. This transistor is designed for high-frequency applications and features a double polysilicon structure with a buried layer, making it suitable for low voltage operations. It is packaged in a plastic, 4-pin dual-emitter SOT343R package, which includes thermal lead for efficient heat dissipation.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 10 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | - | 4.5 | V |
| VEBO (Emitter-Base Voltage) | Open Collector | - | - | 1 | V |
| IC (Collector Current DC) | - | - | - | 30 | mA |
| Ptot (Total Power Dissipation) | Ts ≤ 103°C | - | - | 135 | mW |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| Tj (Operating Junction Temperature) | - | - | - | 150 | °C |
| Rth j-s (Thermal Resistance from Junction to Soldering Point) | - | - | 350 | - | K/W |
Key Features
- Very high power gain
- Low noise figure
- High transition frequency (25 GHz)
- Emitter is thermal lead for efficient heat dissipation
- Low feedback capacitance
Applications
- RF front end
- Wideband applications, e.g., analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
- Radar detectors
- Pagers
- Satellite television tuners (SATV)
- High frequency oscillators
Q & A
- What is the maximum collector-emitter voltage of the BFG425W transistor?
The maximum collector-emitter voltage (VCEO) is 4.5 V.
- What is the typical application of the BFG425W transistor?
The BFG425W is typically used in RF front-end applications, wideband applications, and high-frequency oscillators.
- What is the thermal resistance from junction to soldering point for the BFG425W transistor?
The thermal resistance from junction to soldering point (Rth j-s) is 350 K/W.
- What is the maximum collector current for the BFG425W transistor?
The maximum collector current (IC) is 30 mA.
- Is the BFG425W transistor RoHS compliant?
- What is the package type of the BFG425W transistor?
The BFG425W transistor is packaged in a plastic, 4-pin dual-emitter SOT343R package.
- What are the key features of the BFG425W transistor?
The key features include very high power gain, low noise figure, high transition frequency, and low feedback capacitance.
- What is the storage temperature range for the BFG425W transistor?
The storage temperature range is from -65°C to +150°C.
- Is the BFG425W transistor still in production?
No, the BFG425W transistor is no longer manufactured.
- What are some common applications of the BFG425W transistor in communication systems?
