BFG540W,115
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NXP USA Inc. BFG540W,115

Manufacturer No:
BFG540W,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 9GHZ 4SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFG540W,115 is a high-performance NPN wideband transistor manufactured by NXP USA Inc. This component is designed for high-frequency applications, particularly in the RF domain. Although it is no longer in active production, it remains a significant component in legacy and specific niche applications due to its robust performance characteristics.

Key Specifications

Parameter Value Unit
Transistor Type NPN -
Voltage - Collector Emitter Breakdown (Max) 15 V
Current - Collector (Ic) (Max) 120 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 40mA, 8V -
Gain - Frequency - Transition 9 GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 2.4dB @ 900MHz -
Operating Temperature (TJ) 150 °C
Package SOT-343N -
Packaging Tape & Reel (TR), Cut Tape (CT), Digi-Reel® -

Key Features

  • High-frequency operation up to 9 GHz, making it suitable for RF applications.
  • Low noise figure, typically ranging from 1.3dB to 2.4dB at 900MHz.
  • High DC current gain (hFE) of 60 at 40mA and 8V.
  • Maximum collector current of 120mA and collector-emitter breakdown voltage of 15V.
  • Surface mount package (SOT-343N) for easy integration into modern PCB designs.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.

Applications

The BFG540W,115 transistor is primarily used in high-frequency RF applications, including:

  • RF amplifiers and receivers.
  • Wireless communication systems.
  • Microwave circuits.
  • High-frequency measurement equipment.

Q & A

  1. What is the maximum frequency of operation for the BFG540W,115 transistor?

    The BFG540W,115 transistor operates up to 9 GHz.

  2. What is the package type of the BFG540W,115?

    The package type is SOT-343N.

  3. Is the BFG540W,115 lead-free and RoHS compliant?
  4. What is the maximum collector current of the BFG540W,115?

    The maximum collector current is 120mA.

  5. What is the typical noise figure of the BFG540W,115 at 900MHz?

    The typical noise figure ranges from 1.3dB to 2.4dB at 900MHz.

  6. Is the BFG540W,115 still in active production?

    No, the BFG540W,115 is no longer manufactured.

  7. What is the operating temperature range for the BFG540W,115?

    The operating temperature (TJ) is up to 150°C.

  8. What packaging options are available for the BFG540W,115?

    The packaging options include Tape & Reel (TR), Cut Tape (CT), and Digi-Reel®.

  9. What is the DC current gain (hFE) of the BFG540W,115?

    The DC current gain (hFE) is 60 at 40mA and 8V.

  10. What are some common applications of the BFG540W,115 transistor?

    Common applications include RF amplifiers, wireless communication systems, microwave circuits, and high-frequency measurement equipment.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.3dB ~ 1.8dB @ 900MHz
Gain:- 
Power - Max:500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 40mA, 8V
Current - Collector (Ic) (Max):120mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343 Reverse Pinning
Supplier Device Package:4-SO
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Same Series
BFG540W/X,115
BFG540W/X,115
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BFG540W/XR,135
BFG540W/XR,135
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Similar Products

Part Number BFG540W,115 BFG520W,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 9GHz 9GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 1.8dB @ 900MHz 1.1dB ~ 2.1dB @ 900MHz
Gain - -
Power - Max 500mW 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 40mA, 8V 60 @ 20mA, 6V
Current - Collector (Ic) (Max) 120mA 70mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-343 Reverse Pinning SOT-343 Reverse Pinning
Supplier Device Package 4-SO 4-SO

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