BFR 93AW E6327
  • Share:

Infineon Technologies BFR 93AW E6327

Manufacturer No:
BFR 93AW E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 6GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFR93AW E6327 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. This transistor is designed for use in low distortion amplifiers and oscillators, particularly in the frequency range up to 2 GHz. It is characterized by its high performance at collector currents ranging from 5 mA to 30 mA. The device is packaged in a Pb-free (RoHS compliant) and halogen-free SOT323 package, ensuring environmental sustainability and reliability. The BFR93AW E6327 is also qualified according to the AEC-Q101 standard, making it suitable for automotive applications where high reliability is crucial.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20 V
Collector-base voltage VCBO 20 V
Emitter-base voltage VEBO 2 V
Collector current IC 90 mA
Base current IB 9 mA
Total power dissipation Ptot 300 mW
Junction temperature TJ 150 °C
Ambient temperature TA -65 to 150 °C
Storage temperature TStg -65 to 150 °C
DC current gain hFE 70 to 140 -
Third order intercept point IP3 -15 dBm
1dB Compression point P-1dB -6 to -1 dBm

Key Features

  • Low noise operation suitable for low distortion amplifiers and oscillators up to 2 GHz.
  • High DC current gain (hFE) ranging from 70 to 140.
  • Pb-free (RoHS compliant) and halogen-free SOT323 package.
  • AEC-Q101 qualified for automotive applications.
  • High third order intercept point (IP3) of -15 dBm.
  • 1dB Compression point of -6 to -1 dBm.
  • Surface mount technology for easy integration into modern designs.

Applications

The BFR93AW E6327 is versatile and can be used in various RF applications, including:

  • Low distortion amplifiers and oscillators.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Wireless communication systems.
  • Radar and microwave systems.
  • General-purpose RF amplification where low noise and high linearity are required.

Q & A

  1. What is the maximum collector-emitter voltage of the BFR93AW E6327?

    The maximum collector-emitter voltage (VCEO) is 12 V.

  2. What is the typical DC current gain of the BFR93AW E6327?

    The typical DC current gain (hFE) is between 70 and 140.

  3. What is the package type of the BFR93AW E6327?

    The package type is SOT323.

  4. Is the BFR93AW E6327 RoHS compliant?

    Yes, the BFR93AW E6327 is Pb-free (RoHS compliant) and halogen-free.

  5. What is the maximum junction temperature of the BFR93AW E6327?

    The maximum junction temperature (TJ) is 150 °C.

  6. What is the third order intercept point (IP3) of the BFR93AW E6327?

    The third order intercept point (IP3) is -15 dBm.

  7. What are the typical applications of the BFR93AW E6327?

    Typical applications include low distortion amplifiers, oscillators, automotive electronics, and general-purpose RF amplification.

  8. Is the BFR93AW E6327 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What is the maximum total power dissipation of the BFR93AW E6327?

    The maximum total power dissipation (Ptot) is 300 mW.

  10. What is the storage temperature range for the BFR93AW E6327?

    The storage temperature range (TStg) is -65 to 150 °C.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:6GHz
Noise Figure (dB Typ @ f):1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain:10.5dB ~ 15.5dB
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 30mA, 8V
Current - Collector (Ic) (Max):90mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

-
273

Please send RFQ , we will respond immediately.

Same Series
BFR 93AW E6327
BFR 93AW E6327
RF TRANS NPN 12V 6GHZ SOT323-3

Related Product By Categories

BFU520Y115
BFU520Y115
NXP USA Inc.
DUAL NPN WIDEBAND RF TRANSISTOR
BFS17NQTA
BFS17NQTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23
BFU530AVL
BFU530AVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
BFU550VL
BFU550VL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BFG310/XR,215
BFG310/XR,215
NXP USA Inc.
RF TRANS NPN 6V 14GHZ SOT143R
BFG480W,115
BFG480W,115
NXP USA Inc.
RF TRANS NPN 4.5V 21GHZ CMPAK-4
BFQ540,115
BFQ540,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT89-3
BFR106,215
BFR106,215
NXP USA Inc.
RF TRANS NPN 15V 5GHZ TO236AB
BFS520,135
BFS520,135
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
BFS520,115
BFS520,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
BFR93A,215
BFR93A,215
NXP USA Inc.
RF TRANS NPN 12V 6GHZ TO236AB
BFS 17P E8211
BFS 17P E8211
Infineon Technologies
RF TRANS NPN SOT23-3

Related Product By Brand

BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BAV 99T E6433
BAV 99T E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC75
BAT 54 B5003
BAT 54 B5003
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOT23-3
BC847SH6433XTMA1
BC847SH6433XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
BSS84PWH6327XTSA1
BSS84PWH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
FF600R12ME4CB11BPSA1
FF600R12ME4CB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
BTS72002EPAXUMA1
BTS72002EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14
TLE7368EXUMA3
TLE7368EXUMA3
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA