Overview
The BFR93AW E6327 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. This transistor is designed for use in low distortion amplifiers and oscillators, particularly in the frequency range up to 2 GHz. It is characterized by its high performance at collector currents ranging from 5 mA to 30 mA. The device is packaged in a Pb-free (RoHS compliant) and halogen-free SOT323 package, ensuring environmental sustainability and reliability. The BFR93AW E6327 is also qualified according to the AEC-Q101 standard, making it suitable for automotive applications where high reliability is crucial.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-emitter voltage | VCEO | 12 | V |
Collector-emitter voltage | VCES | 20 | V |
Collector-base voltage | VCBO | 20 | V |
Emitter-base voltage | VEBO | 2 | V |
Collector current | IC | 90 | mA |
Base current | IB | 9 | mA |
Total power dissipation | Ptot | 300 | mW |
Junction temperature | TJ | 150 | °C |
Ambient temperature | TA | -65 to 150 | °C |
Storage temperature | TStg | -65 to 150 | °C |
DC current gain | hFE | 70 to 140 | - |
Third order intercept point | IP3 | -15 | dBm |
1dB Compression point | P-1dB | -6 to -1 | dBm |
Key Features
- Low noise operation suitable for low distortion amplifiers and oscillators up to 2 GHz.
- High DC current gain (hFE) ranging from 70 to 140.
- Pb-free (RoHS compliant) and halogen-free SOT323 package.
- AEC-Q101 qualified for automotive applications.
- High third order intercept point (IP3) of -15 dBm.
- 1dB Compression point of -6 to -1 dBm.
- Surface mount technology for easy integration into modern designs.
Applications
The BFR93AW E6327 is versatile and can be used in various RF applications, including:
- Low distortion amplifiers and oscillators.
- Automotive electronics due to its AEC-Q101 qualification.
- Wireless communication systems.
- Radar and microwave systems.
- General-purpose RF amplification where low noise and high linearity are required.
Q & A
- What is the maximum collector-emitter voltage of the BFR93AW E6327?
The maximum collector-emitter voltage (VCEO) is 12 V.
- What is the typical DC current gain of the BFR93AW E6327?
The typical DC current gain (hFE) is between 70 and 140.
- What is the package type of the BFR93AW E6327?
The package type is SOT323.
- Is the BFR93AW E6327 RoHS compliant?
Yes, the BFR93AW E6327 is Pb-free (RoHS compliant) and halogen-free.
- What is the maximum junction temperature of the BFR93AW E6327?
The maximum junction temperature (TJ) is 150 °C.
- What is the third order intercept point (IP3) of the BFR93AW E6327?
The third order intercept point (IP3) is -15 dBm.
- What are the typical applications of the BFR93AW E6327?
Typical applications include low distortion amplifiers, oscillators, automotive electronics, and general-purpose RF amplification.
- Is the BFR93AW E6327 suitable for automotive applications?
Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the maximum total power dissipation of the BFR93AW E6327?
The maximum total power dissipation (Ptot) is 300 mW.
- What is the storage temperature range for the BFR93AW E6327?
The storage temperature range (TStg) is -65 to 150 °C.