BFR 93AW E6327
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Infineon Technologies BFR 93AW E6327

Manufacturer No:
BFR 93AW E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 6GHZ SOT323-3
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BFR93AW E6327 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. This transistor is designed for use in low distortion amplifiers and oscillators, particularly in the frequency range up to 2 GHz. It is characterized by its high performance at collector currents ranging from 5 mA to 30 mA. The device is packaged in a Pb-free (RoHS compliant) and halogen-free SOT323 package, ensuring environmental sustainability and reliability. The BFR93AW E6327 is also qualified according to the AEC-Q101 standard, making it suitable for automotive applications where high reliability is crucial.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20 V
Collector-base voltage VCBO 20 V
Emitter-base voltage VEBO 2 V
Collector current IC 90 mA
Base current IB 9 mA
Total power dissipation Ptot 300 mW
Junction temperature TJ 150 °C
Ambient temperature TA -65 to 150 °C
Storage temperature TStg -65 to 150 °C
DC current gain hFE 70 to 140 -
Third order intercept point IP3 -15 dBm
1dB Compression point P-1dB -6 to -1 dBm

Key Features

  • Low noise operation suitable for low distortion amplifiers and oscillators up to 2 GHz.
  • High DC current gain (hFE) ranging from 70 to 140.
  • Pb-free (RoHS compliant) and halogen-free SOT323 package.
  • AEC-Q101 qualified for automotive applications.
  • High third order intercept point (IP3) of -15 dBm.
  • 1dB Compression point of -6 to -1 dBm.
  • Surface mount technology for easy integration into modern designs.

Applications

The BFR93AW E6327 is versatile and can be used in various RF applications, including:

  • Low distortion amplifiers and oscillators.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Wireless communication systems.
  • Radar and microwave systems.
  • General-purpose RF amplification where low noise and high linearity are required.

Q & A

  1. What is the maximum collector-emitter voltage of the BFR93AW E6327?

    The maximum collector-emitter voltage (VCEO) is 12 V.

  2. What is the typical DC current gain of the BFR93AW E6327?

    The typical DC current gain (hFE) is between 70 and 140.

  3. What is the package type of the BFR93AW E6327?

    The package type is SOT323.

  4. Is the BFR93AW E6327 RoHS compliant?

    Yes, the BFR93AW E6327 is Pb-free (RoHS compliant) and halogen-free.

  5. What is the maximum junction temperature of the BFR93AW E6327?

    The maximum junction temperature (TJ) is 150 °C.

  6. What is the third order intercept point (IP3) of the BFR93AW E6327?

    The third order intercept point (IP3) is -15 dBm.

  7. What are the typical applications of the BFR93AW E6327?

    Typical applications include low distortion amplifiers, oscillators, automotive electronics, and general-purpose RF amplification.

  8. Is the BFR93AW E6327 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What is the maximum total power dissipation of the BFR93AW E6327?

    The maximum total power dissipation (Ptot) is 300 mW.

  10. What is the storage temperature range for the BFR93AW E6327?

    The storage temperature range (TStg) is -65 to 150 °C.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:6GHz
Noise Figure (dB Typ @ f):1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain:10.5dB ~ 15.5dB
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 30mA, 8V
Current - Collector (Ic) (Max):90mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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