BFR 93AW E6327
  • Share:

Infineon Technologies BFR 93AW E6327

Manufacturer No:
BFR 93AW E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 6GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFR93AW E6327 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. This transistor is designed for use in low distortion amplifiers and oscillators, particularly in the frequency range up to 2 GHz. It is characterized by its high performance at collector currents ranging from 5 mA to 30 mA. The device is packaged in a Pb-free (RoHS compliant) and halogen-free SOT323 package, ensuring environmental sustainability and reliability. The BFR93AW E6327 is also qualified according to the AEC-Q101 standard, making it suitable for automotive applications where high reliability is crucial.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20 V
Collector-base voltage VCBO 20 V
Emitter-base voltage VEBO 2 V
Collector current IC 90 mA
Base current IB 9 mA
Total power dissipation Ptot 300 mW
Junction temperature TJ 150 °C
Ambient temperature TA -65 to 150 °C
Storage temperature TStg -65 to 150 °C
DC current gain hFE 70 to 140 -
Third order intercept point IP3 -15 dBm
1dB Compression point P-1dB -6 to -1 dBm

Key Features

  • Low noise operation suitable for low distortion amplifiers and oscillators up to 2 GHz.
  • High DC current gain (hFE) ranging from 70 to 140.
  • Pb-free (RoHS compliant) and halogen-free SOT323 package.
  • AEC-Q101 qualified for automotive applications.
  • High third order intercept point (IP3) of -15 dBm.
  • 1dB Compression point of -6 to -1 dBm.
  • Surface mount technology for easy integration into modern designs.

Applications

The BFR93AW E6327 is versatile and can be used in various RF applications, including:

  • Low distortion amplifiers and oscillators.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Wireless communication systems.
  • Radar and microwave systems.
  • General-purpose RF amplification where low noise and high linearity are required.

Q & A

  1. What is the maximum collector-emitter voltage of the BFR93AW E6327?

    The maximum collector-emitter voltage (VCEO) is 12 V.

  2. What is the typical DC current gain of the BFR93AW E6327?

    The typical DC current gain (hFE) is between 70 and 140.

  3. What is the package type of the BFR93AW E6327?

    The package type is SOT323.

  4. Is the BFR93AW E6327 RoHS compliant?

    Yes, the BFR93AW E6327 is Pb-free (RoHS compliant) and halogen-free.

  5. What is the maximum junction temperature of the BFR93AW E6327?

    The maximum junction temperature (TJ) is 150 °C.

  6. What is the third order intercept point (IP3) of the BFR93AW E6327?

    The third order intercept point (IP3) is -15 dBm.

  7. What are the typical applications of the BFR93AW E6327?

    Typical applications include low distortion amplifiers, oscillators, automotive electronics, and general-purpose RF amplification.

  8. Is the BFR93AW E6327 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What is the maximum total power dissipation of the BFR93AW E6327?

    The maximum total power dissipation (Ptot) is 300 mW.

  10. What is the storage temperature range for the BFR93AW E6327?

    The storage temperature range (TStg) is -65 to 150 °C.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:6GHz
Noise Figure (dB Typ @ f):1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain:10.5dB ~ 15.5dB
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 30mA, 8V
Current - Collector (Ic) (Max):90mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

-
273

Please send RFQ , we will respond immediately.

Same Series
BFR 93AW E6327
BFR 93AW E6327
RF TRANS NPN 12V 6GHZ SOT323-3

Related Product By Categories

BFU730F,115
BFU730F,115
NXP USA Inc.
RF TRANS NPN 2.8V 55GHZ 4DFP
BFU530AR
BFU530AR
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
BFU580QX
BFU580QX
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT89-3
BFU550VL
BFU550VL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BLT50,115
BLT50,115
NXP USA Inc.
RF TRANS NPN 10V 470MHZ SOT223
BFQ67W,135
BFQ67W,135
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT323-3
BFR540,235
BFR540,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ TO236AB
BFG480W,115
BFG480W,115
NXP USA Inc.
RF TRANS NPN 4.5V 21GHZ CMPAK-4
BFG541,115
BFG541,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT223
BFS17W,115
BFS17W,115
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
BFS 17P E8211
BFS 17P E8211
Infineon Technologies
RF TRANS NPN SOT23-3
BFG520/X,215
BFG520/X,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B

Related Product By Brand

BAS21UE6327HTSA1
BAS21UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 200V 250MA SC74-6
BAS40-06WE6327
BAS40-06WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS4004E6327HTSA1
BAS4004E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
IRFP260NPBF
IRFP260NPBF
Infineon Technologies
MOSFET N-CH 200V 50A TO247AC
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
2N7002L6327HTSA1
2N7002L6327HTSA1
Infineon Technologies
MOSFET N-CH 60V 300MA SOT23-3
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
ITS716GFUMA1
ITS716GFUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I