BFR 93AW E6327
  • Share:

Infineon Technologies BFR 93AW E6327

Manufacturer No:
BFR 93AW E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 6GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFR93AW E6327 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. This transistor is designed for use in low distortion amplifiers and oscillators, particularly in the frequency range up to 2 GHz. It is characterized by its high performance at collector currents ranging from 5 mA to 30 mA. The device is packaged in a Pb-free (RoHS compliant) and halogen-free SOT323 package, ensuring environmental sustainability and reliability. The BFR93AW E6327 is also qualified according to the AEC-Q101 standard, making it suitable for automotive applications where high reliability is crucial.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20 V
Collector-base voltage VCBO 20 V
Emitter-base voltage VEBO 2 V
Collector current IC 90 mA
Base current IB 9 mA
Total power dissipation Ptot 300 mW
Junction temperature TJ 150 °C
Ambient temperature TA -65 to 150 °C
Storage temperature TStg -65 to 150 °C
DC current gain hFE 70 to 140 -
Third order intercept point IP3 -15 dBm
1dB Compression point P-1dB -6 to -1 dBm

Key Features

  • Low noise operation suitable for low distortion amplifiers and oscillators up to 2 GHz.
  • High DC current gain (hFE) ranging from 70 to 140.
  • Pb-free (RoHS compliant) and halogen-free SOT323 package.
  • AEC-Q101 qualified for automotive applications.
  • High third order intercept point (IP3) of -15 dBm.
  • 1dB Compression point of -6 to -1 dBm.
  • Surface mount technology for easy integration into modern designs.

Applications

The BFR93AW E6327 is versatile and can be used in various RF applications, including:

  • Low distortion amplifiers and oscillators.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Wireless communication systems.
  • Radar and microwave systems.
  • General-purpose RF amplification where low noise and high linearity are required.

Q & A

  1. What is the maximum collector-emitter voltage of the BFR93AW E6327?

    The maximum collector-emitter voltage (VCEO) is 12 V.

  2. What is the typical DC current gain of the BFR93AW E6327?

    The typical DC current gain (hFE) is between 70 and 140.

  3. What is the package type of the BFR93AW E6327?

    The package type is SOT323.

  4. Is the BFR93AW E6327 RoHS compliant?

    Yes, the BFR93AW E6327 is Pb-free (RoHS compliant) and halogen-free.

  5. What is the maximum junction temperature of the BFR93AW E6327?

    The maximum junction temperature (TJ) is 150 °C.

  6. What is the third order intercept point (IP3) of the BFR93AW E6327?

    The third order intercept point (IP3) is -15 dBm.

  7. What are the typical applications of the BFR93AW E6327?

    Typical applications include low distortion amplifiers, oscillators, automotive electronics, and general-purpose RF amplification.

  8. Is the BFR93AW E6327 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What is the maximum total power dissipation of the BFR93AW E6327?

    The maximum total power dissipation (Ptot) is 300 mW.

  10. What is the storage temperature range for the BFR93AW E6327?

    The storage temperature range (TStg) is -65 to 150 °C.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:6GHz
Noise Figure (dB Typ @ f):1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain:10.5dB ~ 15.5dB
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 30mA, 8V
Current - Collector (Ic) (Max):90mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

-
273

Please send RFQ , we will respond immediately.

Same Series
BFR 93AW E6327
BFR 93AW E6327
RF TRANS NPN 12V 6GHZ SOT323-3

Related Product By Categories

BFU760F,115
BFU760F,115
NXP USA Inc.
RF TRANS NPN 2.8V 45GHZ 4DFP
BFU550XRR215
BFU550XRR215
NXP USA Inc.
NPN RF TRANSISTOR
BFU550XRVL
BFU550XRVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143R
BFU520AVL
BFU520AVL
NXP USA Inc.
RF TRANS NPN 12V 10GHZ TO236AB
BFG520W,115
BFG520W,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ 4SO
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG97,115
BFG97,115
NXP USA Inc.
RF TRANS NPN 15V 5.5GHZ SOT223
BFG480W,115
BFG480W,115
NXP USA Inc.
RF TRANS NPN 4.5V 21GHZ CMPAK-4
BFT25A,215
BFT25A,215
NXP USA Inc.
RF TRANS NPN 5V 5GHZ TO236AB
BFG541,115
BFG541,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT223
BFR520,215
BFR520,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ TO236AB
BFR92AW,115
BFR92AW,115
NXP USA Inc.
RF TRANS NPN 15V 5GHZ SOT323-3

Related Product By Brand

BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS4005E6327HTSA1
BAS4005E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS28
BAS28
Infineon Technologies
SWITCHING DIODE ARRAY
BAS40-06WH6327
BAS40-06WH6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3
BC847C-B5000
BC847C-B5000
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
BCP5310E6327HTSA1
BCP5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
BSS83PE6327
BSS83PE6327
Infineon Technologies
MOSFET P-CH 60V 330MA SOT23-3
TLE6209RAUMA2
TLE6209RAUMA2
Infineon Technologies
IC MOTOR DRIVER 4.75V-5.5V 20DSO