Overview
The BAS40-06WH6327 is a general-purpose dual Schottky diode produced by Infineon Technologies. It is designed for high-speed switching applications and is packaged in a surface-mount SOT-323 or SC-70 format. This diode is part of the BAS40 series, known for its low forward voltage drop, fast switching capabilities, and robust protection features.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 40 | V |
| Forward Continuous Current | IFM | 200 | mA |
| Forward Surge Current (t < 1.0s) | IFSM | 600 | mA |
| Power Dissipation | PD | 350 | mW |
| Thermal Resistance, Junction to Ambient Air | RθJA | 357 | °C/W |
| Operating Temperature Range | TJ | -55 to +125 | °C |
| Storage Temperature Range | TSTG | -65 to +150 | °C |
| Forward Voltage (IF = 1 mA) | VF | 380 | mV |
| Forward Voltage (IF = 40 mA) | VF | 1000 | mV |
| Reverse Leakage Current (VR = 30 V) | IR | 20 | nA |
| Total Capacitance (VR = 0 V, f = 1 MHz) | CT | 5.0 | pF |
| Reverse Recovery Time (IF = IR = 10 mA to IR = 1.0 mA) | trr | 5.0 | ns |
Key Features
- Low Forward Voltage Drop: The BAS40-06WH6327 features a low forward voltage drop, which is beneficial for reducing power losses in high-speed switching applications.
- Fast Switching: This diode is designed for fast switching, making it suitable for applications requiring quick response times.
- Pb-free (RoHS Compliant): The diode is packaged in a lead-free, RoHS compliant format, ensuring environmental compliance.
- PN Junction Guard Ring for Transient and ESD Protection: The diode includes a PN junction guard ring, providing protection against transient and electrostatic discharge (ESD) events.
- Surface-Mount Package: Available in SOT-323 or SC-70 packages, making it easy to integrate into surface-mount designs.
Applications
- High-Speed Switching: Ideal for applications requiring fast switching times, such as in power supplies, DC-DC converters, and high-frequency circuits.
- Circuit Protection: Used for voltage clamping and transient protection in various electronic circuits.
- High-Level Detecting and Mixing: Suitable for high-level detecting and mixing applications due to its fast switching and low forward voltage drop characteristics.
- General-Purpose Diode Applications: Can be used in a wide range of general-purpose diode applications where high-speed switching and low power loss are critical.
Q & A
- What is the peak repetitive reverse voltage of the BAS40-06WH6327?
The peak repetitive reverse voltage (VRRM) is 40 V.
- What is the forward continuous current rating of this diode?
The forward continuous current (IFM) is 200 mA.
- What is the maximum forward surge current for this diode?
The maximum forward surge current (IFSM) for t < 1.0s is 600 mA.
- What is the thermal resistance, junction to ambient air, for this diode?
The thermal resistance, junction to ambient air (RθJA), is 357 °C/W.
- What is the operating temperature range for the BAS40-06WH6327?
The operating temperature range is -55 to +125 °C.
- Is the BAS40-06WH6327 RoHS compliant?
Yes, the diode is Pb-free and RoHS compliant.
- What type of protection does the PN junction guard ring provide?
The PN junction guard ring provides protection against transient and electrostatic discharge (ESD) events.
- What is the typical forward voltage drop at 1 mA and 40 mA?
The typical forward voltage drop is 380 mV at 1 mA and 1000 mV at 40 mA.
- What is the reverse recovery time of the BAS40-06WH6327?
The reverse recovery time (trr) is 5.0 ns.
- In what package types is the BAS40-06WH6327 available?
The diode is available in SOT-323 or SC-70 surface-mount packages.
