BAT54A/DG/B4215
  • Share:

NXP USA Inc. BAT54A/DG/B4215

Manufacturer No:
BAT54A/DG/B4215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RECTIFIER DIODE, SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT54A/DG/B4215 is a Schottky barrier diode produced by NXP USA Inc. This component is part of the BAT54 series and is encapsulated in a small SOT23 (TO-236AB) surface-mounted device package. It features a planar Schottky barrier diode with an integrated guard ring for stress protection, making it suitable for various high-speed and low-voltage applications.

Key Specifications

Parameter Conditions Value Unit
Continuous Reverse Voltage (VR) - 30 V
Continuous Forward Current (IF) - 200 mA
Repetitive Peak Forward Current (IFRM) tp ≤ 1 s; δ ≤ 0.5 300 mA
Non-Repetitive Peak Forward Current (IFSM) tp < 10 ms 600 mA
Storage Temperature (Tstg) - -65 to +150 °C
Junction Temperature (Tj) - -125 °C
Total Power Dissipation (Ptot) Tamb ≤ 25 °C 230 mW
Forward Voltage (VF) IF = 10 mA 400 mV
Reverse Current (IR) VR = 25 V 2 µA
Reverse Recovery Time (trr) IF = 10 mA to IR = 10 mA; RL = 100 Ω 5 ns
Diode Capacitance (Cd) f = 1 MHz; VR = 1 V 10 pF

Key Features

  • Low Forward Voltage: The BAT54A/DG/B4215 has a low forward voltage drop, typically 400 mV at 10 mA, making it efficient for low-voltage applications.
  • Guard Ring Protection: The diode includes an integrated guard ring for stress protection, enhancing its reliability and durability.
  • Small SMD Package: Encapsulated in a SOT23 package, this diode is ideal for space-constrained designs.
  • High-Speed Switching: Suitable for ultra-high-speed switching applications due to its fast reverse recovery time of 5 ns.
  • Voltage Clamping and Protection Circuits: Often used in voltage clamping and protection circuits to safeguard against voltage spikes and surges.

Applications

  • Ultra High-Speed Switching: Ideal for applications requiring fast switching times, such as in high-frequency circuits and switching power supplies.
  • Voltage Clamping: Used to clamp voltage levels in various electronic circuits to prevent damage from voltage spikes.
  • Protection Circuits: Employed in protection circuits to safeguard electronic components from overvoltage and reverse voltage conditions.
  • Blocking Diodes: Utilized as blocking diodes in power supply circuits to prevent backflow of current.
  • Automotive and Industrial Applications: Finds use in automotive and industrial applications where high reliability and efficiency are crucial.

Q & A

  1. What is the maximum continuous reverse voltage of the BAT54A/DG/B4215?

    The maximum continuous reverse voltage is 30 V.

  2. What is the maximum continuous forward current of the BAT54A/DG/B4215?

    The maximum continuous forward current is 200 mA.

  3. What is the typical forward voltage drop of the BAT54A/DG/B4215 at 10 mA?

    The typical forward voltage drop at 10 mA is 400 mV.

  4. What is the reverse recovery time of the BAT54A/DG/B4215?

    The reverse recovery time is 5 ns when switched from IF = 10 mA to IR = 10 mA with RL = 100 Ω.

  5. What is the diode capacitance of the BAT54A/DG/B4215 at 1 MHz and 1 V?

    The diode capacitance is 10 pF at 1 MHz and 1 V.

  6. In what package is the BAT54A/DG/B4215 encapsulated?

    The BAT54A/DG/B4215 is encapsulated in a SOT23 (TO-236AB) surface-mounted device package.

  7. What are some common applications of the BAT54A/DG/B4215?

    Common applications include ultra high-speed switching, voltage clamping, protection circuits, and blocking diodes.

  8. Is the BAT54A/DG/B4215 suitable for automotive applications?

    Yes, it is suitable for automotive and industrial applications due to its high reliability and efficiency.

  9. What is the storage temperature range for the BAT54A/DG/B4215?

    The storage temperature range is -65 °C to +150 °C.

  10. What is the junction temperature limit for the BAT54A/DG/B4215?

    The junction temperature limit is -125 °C.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.05
14,450

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BAT54A/DG/B4215 BAT54A/DG/B3215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Anode
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 2 µA @ 25 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3

Related Product By Categories

BAS56,235
BAS56,235
Nexperia USA Inc.
DIODE ARRAY GP 60V 200MA SOT143B
BAS 70-05 E6433
BAS 70-05 E6433
Infineon Technologies
SCHOTTKY DIODE
STPS3045CP
STPS3045CP
STMicroelectronics
DIODE ARRAY SCHOTTKY 45V SOT93
BAV99W/DG/B2115
BAV99W/DG/B2115
NXP USA Inc.
RECTIFIER DIODE
MBRD660CTT4G/BKN
MBRD660CTT4G/BKN
onsemi
DEVELOPMENT KITS/ACCESSORIES
BAS70-04 RFG
BAS70-04 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BAV23C-G3-18
BAV23C-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
STPS20150CFP
STPS20150CFP
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V TO220F
STTH802CFP
STTH802CFP
STMicroelectronics
DIODE ARRAY GP 200V 4A TO220FP
BAV99W/DG/B4X
BAV99W/DG/B4X
Nexperia USA Inc.
DIODE SWITCHING TO-236AB
BAS40W-06-7
BAS40W-06-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT323

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
MIMXRT1011CAE4A
MIMXRT1011CAE4A
NXP USA Inc.
IC MCU 32BIT EXT MEM 80FQFP
MC9S12XEP100MAL
MC9S12XEP100MAL
NXP USA Inc.
IC MCU 16BIT 1MB FLASH 112LQFP
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
NX3L1G3157GM,115
NX3L1G3157GM,115
NXP USA Inc.
IC SWITCH SPDT 6XSON
TJA1049TK/3/1Z
TJA1049TK/3/1Z
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8HVSON
SC28L202A1DGG/G:11
SC28L202A1DGG/G:11
NXP USA Inc.
IC UART DUAL W/FIFO 56-TSSOP
SA5212AD,602
SA5212AD,602
NXP USA Inc.
IC TRANSIMPEDANCE 1 CIRCUIT 8SO
74LVC1G17GV-Q100125
74LVC1G17GV-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
MMPF0200F6AEP
MMPF0200F6AEP
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56HVQFN