BAW56SH6727XTSA1
  • Share:

Infineon Technologies BAW56SH6727XTSA1

Manufacturer No:
BAW56SH6727XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56SH6727XTSA1 is a high-speed switching diode manufactured by Infineon Technologies. This component is part of the BAW56 series, known for its suitability in high-speed switching applications. The diode array features a common anode configuration, making it versatile for various circuit designs. It is also Pb-free and RoHS compliant, ensuring environmental sustainability. Additionally, the BAW56SH6727XTSA1 is qualified according to AEC Q101 standards, which guarantees its reliability in automotive and other demanding environments.

Key Specifications

Parameter Symbol Value Unit
Diode reverse voltage VR 80 V
Peak reverse voltage VRM 85 V
Forward current IF 200 mA
Non-repetitive peak surge forward current (t = 1 µs) IFSM 4.5 A
Total power dissipation (TS ≤ 85°C for BAW56S) Ptot 250 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -65 to 150 °C
Thermal Resistance (Junction - soldering point) RthJS 260 K/W
Reverse recovery time (IF = 10 mA, IR = 10 mA) trr 4 ns

Key Features

  • High-speed switching capabilities, making it ideal for applications requiring fast switching times.
  • Common anode configuration, which simplifies circuit design and reduces component count.
  • Pb-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
  • Qualified according to AEC Q101 standards, ensuring reliability in automotive and other demanding environments.
  • Low forward voltage drop and high reverse voltage rating, enhancing overall performance and reliability.
  • Compact package options (SOT23, SOT363, SC74, SOT323), suitable for space-constrained designs.

Applications

  • High-speed switching circuits in automotive, industrial, and consumer electronics.
  • Signal processing and data transmission systems where fast switching times are critical.
  • Power supply and voltage regulation circuits requiring high reliability and low forward voltage drop.
  • Audio and video equipment where high-speed switching diodes are necessary for signal integrity.
  • General-purpose rectification and voltage clamping applications.

Q & A

  1. What is the primary application of the BAW56SH6727XTSA1 diode?

    The BAW56SH6727XTSA1 is primarily used in high-speed switching applications.

  2. What is the configuration of the BAW56SH6727XTSA1 diode array?

    The diode array features a common anode configuration.

  3. Is the BAW56SH6727XTSA1 Pb-free and RoHS compliant?
  4. What is the maximum junction temperature for the BAW56SH6727XTSA1?

    The maximum junction temperature is 150°C.

  5. What is the reverse recovery time of the BAW56SH6727XTSA1?

    The reverse recovery time is 4 ns.

  6. What are the package options available for the BAW56SH6727XTSA1?

    The package options include SOT23, SOT363, SC74, and SOT323.

  7. Is the BAW56SH6727XTSA1 qualified according to any specific standards?
  8. What is the maximum forward current rating for the BAW56SH6727XTSA1?

    The maximum forward current rating is 200 mA.

  9. What is the peak reverse voltage rating for the BAW56SH6727XTSA1?

    The peak reverse voltage rating is 85 V.

  10. What is the total power dissipation for the BAW56SH6727XTSA1 at TS ≤ 85°C?

    The total power dissipation is 250 mW.

Product Attributes

Diode Configuration:2 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:150 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:PG-SOT363-PO
0 Remaining View Similar

In Stock

-
14

Please send RFQ , we will respond immediately.

Same Series
BAW56SH6327XTSA1
BAW56SH6327XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW56UE6327HTSA1
BAW56UE6327HTSA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56UE6433HTMA1
BAW56UE6433HTMA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56E6327
BAW56E6327
DIODE ARRAY GP 80V 200MA SOT23
BAW 56 E6433
BAW 56 E6433
DIODE ARRAY GP 80V 200MA SOT23
BAW56SE6327BTSA1
BAW56SE6327BTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56T E6327
BAW 56T E6327
DIODE ARRAY GP 80V 200MA SC75
BAW56WE6327HTSA1
BAW56WE6327HTSA1
DIODE ARRAY GP 80V 200MA SOT323
BAW 56 B5003
BAW 56 B5003
DIODE ARRAY GP 80V 200MA SOT23
BAW56SH6727XTSA1
BAW56SH6727XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56W H6327
BAW 56W H6327
DIODE ARRAY GP 80V 200MA SOT323

Similar Products

Part Number BAW56SH6727XTSA1 BAW56SH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Last Time Buy Not For New Designs
Diode Configuration 2 Pair Common Anode 2 Pair Common Anode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 150 nA @ 70 V 150 nA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO PG-SOT363-PO

Related Product By Categories

BAT54S-HF
BAT54S-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
STTH1002CGY-TR
STTH1002CGY-TR
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
MBRB10100CT
MBRB10100CT
SMC Diode Solutions
DIODE ARRAY SCHOTTKY 100V D2PAK
BAV99 RFG
BAV99 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
STPS61170CW
STPS61170CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V TO247
BAV99W/DG/B2115
BAV99W/DG/B2115
NXP USA Inc.
RECTIFIER DIODE
BAW56-G3-18
BAW56-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BAV99BRW-TP
BAV99BRW-TP
Micro Commercial Co
DIODE ARRAY GP 75V 150MA SOT363
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A ITO220AB
BYQ28EB-200HE3_A/I
BYQ28EB-200HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BAV70DXV6T5
BAV70DXV6T5
onsemi
DIODE ARRAY GP 100V 200MA SOT563
MUR3020PTG
MUR3020PTG
onsemi
DIODE ARRAY GP 200V 15A SOT93

Related Product By Brand

BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BC847PNB6327XT
BC847PNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC847CWH6778
BC847CWH6778
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BCV47E6327HTSA1
BCV47E6327HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC847C-B5000
BC847C-B5000
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
IRFB4227PBF
IRFB4227PBF
Infineon Technologies
MOSFET N-CH 200V 65A TO220AB
IRLML6402TRPBF-1
IRLML6402TRPBF-1
Infineon Technologies
MOSFET P-CH 20V 3.7A SOT23
IKW50N60TA
IKW50N60TA
Infineon Technologies
IKW50N60 - AUTOMOTIVE IGBT DISCR
TLE73682EXUMA1
TLE73682EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36