BAW 56 E6433
  • Share:

Infineon Technologies BAW 56 E6433

Manufacturer No:
BAW 56 E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW 56 E6433 is a high-speed switching diode array manufactured by Infineon Technologies. This component is designed for high-speed switching applications and features a common anode configuration. It is available in various package types, including SOT23, SOT363, and SOT323, making it versatile for different design requirements. The BAW 56 E6433 is Pb-free and compliant with RoHS, ensuring environmental sustainability. Additionally, it is qualified according to AEC Q101 standards, which guarantees its reliability and performance in automotive and other demanding environments.

Key Specifications

Parameter Symbol Value Unit
Diode Reverse Voltage VR 80 V
Peak Reverse Voltage VRM 85 V
Forward Current IF 200 mA
Non-repetitive Peak Surge Forward Current IFSM 4.5 A (t = 1 µs), 1 A (t = 1 ms), 0.5 A (t = 1 s, single), 0.75 A (t = 1 s, double) A
Total Power Dissipation Ptot 330 mW (BAW56), 250 mW (BAW56S, BAW56U, BAW56W) mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
Thermal Resistance (Junction to Soldering Point) RthJS 360 K/W (BAW56), 260 K/W (BAW56S), 240 K/W (BAW56U), 190 K/W (BAW56W) K/W
Forward Voltage (at IF = 150 mA) VF 1.25 V V
Reverse Recovery Time trr 4 ns ns

Key Features

  • High-speed switching capabilities, making it suitable for fast switching applications.
  • Common anode configuration, which simplifies circuit design and reduces component count.
  • Pb-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
  • Qualified according to AEC Q101, which guarantees its reliability and performance in automotive and other demanding environments.
  • Available in various package types (SOT23, SOT363, SOT323), offering flexibility in design and layout.
  • Low forward voltage drop (VF = 1.25 V at IF = 150 mA) and fast reverse recovery time (trr = 4 ns), enhancing overall efficiency and performance.

Applications

  • High-speed switching circuits in automotive, industrial, and consumer electronics.
  • Signal processing and data transmission systems where fast switching times are critical.
  • Power supply circuits requiring efficient and reliable diode performance.
  • General-purpose switching applications in various electronic devices.

Q & A

  1. What is the maximum reverse voltage of the BAW 56 E6433 diode?

    The maximum reverse voltage (VR) is 80 V, with a peak reverse voltage (VRM) of 85 V.

  2. What is the forward current rating of the BAW 56 E6433?

    The forward current (IF) is rated at 200 mA.

  3. What are the package options available for the BAW 56 E6433?

    The BAW 56 E6433 is available in SOT23, SOT363, and SOT323 packages.

  4. Is the BAW 56 E6433 RoHS compliant?
  5. What is the junction temperature rating of the BAW 56 E6433?

    The junction temperature (Tj) is rated at 150°C.

  6. What is the reverse recovery time of the BAW 56 E6433?

    The reverse recovery time (trr) is 4 ns.

  7. What are the typical applications of the BAW 56 E6433?

    The BAW 56 E6433 is used in high-speed switching circuits, signal processing, power supply circuits, and general-purpose switching applications.

  8. Is the BAW 56 E6433 qualified according to any specific standards?
  9. What is the forward voltage drop at 150 mA for the BAW 56 E6433?

    The forward voltage drop (VF) at 150 mA is 1.25 V.

  10. How does the thermal resistance vary among different package types of the BAW 56 E6433?

    The thermal resistance (RthJS) varies among the package types: 360 K/W for BAW56, 260 K/W for BAW56S, 240 K/W for BAW56U, and 190 K/W for BAW56W.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:150 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
407

Please send RFQ , we will respond immediately.

Same Series
BAW56SH6327XTSA1
BAW56SH6327XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW56UE6327HTSA1
BAW56UE6327HTSA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56UE6433HTMA1
BAW56UE6433HTMA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56E6327
BAW56E6327
DIODE ARRAY GP 80V 200MA SOT23
BAW 56 E6433
BAW 56 E6433
DIODE ARRAY GP 80V 200MA SOT23
BAW56SE6327BTSA1
BAW56SE6327BTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56T E6327
BAW 56T E6327
DIODE ARRAY GP 80V 200MA SC75
BAW56WE6327HTSA1
BAW56WE6327HTSA1
DIODE ARRAY GP 80V 200MA SOT323
BAW 56 B5003
BAW 56 B5003
DIODE ARRAY GP 80V 200MA SOT23
BAW56SH6727XTSA1
BAW56SH6727XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56W H6327
BAW 56W H6327
DIODE ARRAY GP 80V 200MA SOT323

Related Product By Categories

BAT54C,215
BAT54C,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
BAV199,215
BAV199,215
Nexperia USA Inc.
DIODE ARRAY GP 75V 160MA SOT23
BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
BAT54A/DG/B4215
BAT54A/DG/B4215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAV70_R1_00001
BAV70_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAT30CWFILM
BAT30CWFILM
STMicroelectronics
DIODE ARRAY SCHOTTKY 30V SOT323
STPSC20H065CW
STPSC20H065CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 650V TO247
BAV99W/DG/B3115
BAV99W/DG/B3115
NXP USA Inc.
RECTIFIER DIODE
BAW56-G3-18
BAW56-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BYQ28EB-200HE3_A/I
BYQ28EB-200HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BAW56SH6727XTSA1
BAW56SH6727XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS40-06T-7-F-36
BAS40-06T-7-F-36
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523

Related Product By Brand

BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC80740E6327
BC80740E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC 807-16 E6327
BC 807-16 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
BSS138NL6433HTMA1
BSS138NL6433HTMA1
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
BTM7752GXUMA1
BTM7752GXUMA1
Infineon Technologies
IC MOTOR DRIVER 5.5V-28V 36DSO
S34ML01G200TFI000
S34ML01G200TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I