MBRD660CTT4G/BKN
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onsemi MBRD660CTT4G/BKN

Manufacturer No:
MBRD660CTT4G/BKN
Manufacturer:
onsemi
Package:
Bulk
Description:
DEVELOPMENT KITS/ACCESSORIES
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The MBRD660CTT4G/BKN is a high-performance Schottky barrier rectifier produced by onsemi. This component is designed for use in various power management applications, including switching power supplies, inverters, and as free-wheeling diodes. It features a DPAK-3 surface mount package, making it suitable for compact and efficient designs.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 60 V
Average Rectified Forward Current (TC = 130°C) IF(AV) 3 A
Peak Repetitive Forward Current (TC = 130°C, Square Wave, Duty = 0.5) IFRM 6 A
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 75 A
Operating Junction Temperature TJ −65 to +175 °C
Storage Temperature Tstg −65 to +175 °C
Maximum Instantaneous Forward Voltage (iF = 3 Amps, TC = 25°C) VF 0.7 V
Maximum Thermal Resistance, Junction-to-Case RθJC 6 °C/W
Maximum Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W
Package DPAK-3, Surface Mount

Key Features

  • Extremely Fast Switching
  • Extremely Low Forward Drop
  • Platinum Barrier with Avalanche Guardrings
  • Pb-Free and RoHS Compliant
  • Corrosion Resistant and Readily Solderable Terminal Leads
  • AEC-Q101 Qualified and PPAP Capable for Automotive and Other Applications

Applications

  • Switching Power Supplies
  • Inverters
  • Free-Wheeling Diodes
  • Automotive and Industrial Power Management Systems

Q & A

  1. What is the peak repetitive reverse voltage of the MBRD660CTT4G/BKN?

    The peak repetitive reverse voltage is 60 V.

  2. What is the average rectified forward current at TC = 130°C?

    The average rectified forward current is 3 A.

  3. What is the maximum instantaneous forward voltage at iF = 3 Amps and TC = 25°C?

    The maximum instantaneous forward voltage is 0.7 V.

  4. Is the MBRD660CTT4G/BKN Pb-Free and RoHS Compliant?
  5. What is the operating junction temperature range of the MBRD660CTT4G/BKN?

    The operating junction temperature range is −65 to +175°C.

  6. What is the maximum thermal resistance, junction-to-case?

    The maximum thermal resistance, junction-to-case is 6°C/W.

  7. What package type does the MBRD660CTT4G/BKN use?

    The component uses a DPAK-3 surface mount package.

  8. Is the MBRD660CTT4G/BKN suitable for automotive applications?
  9. What are some typical applications of the MBRD660CTT4G/BKN?

    Typical applications include switching power supplies, inverters, and free-wheeling diodes.

  10. What is the storage temperature range for the MBRD660CTT4G/BKN?

    The storage temperature range is −65 to +175°C.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:700 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 60 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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