Overview
The SMUN5311DW1T3G is a digital transistor produced by onsemi, designed to integrate a single device and its external resistor bias network into one compact package. This component is part of the MUN5311DW1 series and is available in the SOT-363 package. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it environmentally friendly and compliant with current regulations.
This digital transistor is suitable for a variety of applications where space is limited and reliability is crucial. It features both PNP and NPN transistors, allowing for versatile use in different circuit designs.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Input Forward Voltage | VIN(fwd) | - | - | 40 | Vdc |
| Input Reverse Voltage | VIN(rev) | - | - | 10 | Vdc |
| DC Current Gain (IC = 5.0 mA, VCE = 10 V) | hFE | 35 | 60 | - | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) | VCE(sat) | - | - | 0.25 | Vdc |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 670 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Integrated Resistor Network: The SMUN5311DW1T3G includes an integrated resistor network, eliminating the need for external resistors and simplifying circuit design.
- Dual Transistor Configuration: Features both PNP and NPN transistors, providing flexibility in circuit design and application.
- Compact Package: Available in the SOT-363 package, which is small and suitable for space-constrained applications.
- Environmental Compliance: Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental safety and regulatory compliance.
- High Reliability: Designed with robust thermal characteristics and electrical specifications to ensure reliable operation under various conditions.
Applications
- Automotive Systems: Suitable for use in automotive electronics due to its robust thermal and electrical specifications.
- Consumer Electronics: Ideal for use in consumer electronics where space is limited and reliability is crucial.
- Industrial Control Systems: Can be used in industrial control systems where compact and reliable transistor solutions are required.
- Medical Devices: Applicable in medical devices that require high reliability and compact design.
- General Purpose Switching: Suitable for general-purpose switching applications where a compact, integrated transistor solution is needed.
Q & A
- What is the maximum collector-base voltage for the SMUN5311DW1T3G?
The maximum collector-base voltage (VCBO) is 50 Vdc.
- What is the typical DC current gain for this transistor?
The typical DC current gain (hFE) is 60.
- What is the collector-emitter saturation voltage?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
- What is the thermal resistance from junction to ambient for the SOT-363 package?
The thermal resistance from junction to ambient (RθJA) is 670 °C/W.
- Is the SMUN5311DW1T3G RoHS Compliant?
Yes, the SMUN5311DW1T3G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What are the typical applications for this transistor?
Typical applications include automotive systems, consumer electronics, industrial control systems, medical devices, and general-purpose switching.
- What package type is the SMUN5311DW1T3G available in?
The SMUN5311DW1T3G is available in the SOT-363 package.
- What is the maximum collector current for continuous operation?
The maximum collector current (IC) for continuous operation is 100 mA.
- What is the input forward voltage rating?
The input forward voltage (VIN(fwd)) rating is 40 Vdc.
- What is the junction and storage temperature range?
The junction and storage temperature range (TJ, Tstg) is -55°C to 150°C.
