Overview
The MUN5311DW1T1G is a dual bias resistor transistor produced by onsemi. This component is designed as a low-power NPN/PNP silicon surface mount transistor with a monolithic bias network consisting of two resistors. It is intended to replace a single device and its external resistor bias network, thereby simplifying circuit design and reducing board space and component count.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| Polarity | NPN/PNP | |
| R1, R2 (Base Resistors) | 10 kΩ | |
| Output Current (Max) | 100 mA | |
| Supply Voltage | 50 V | |
| Package Style | SOT-363 (SC-70-6, SC-88) | |
| Mounting Method | Surface Mount | |
| Collector-Base Cutoff Current (ICBO) | 100 nA | |
| Collector-Emitter Cutoff Current (ICEO) | 500 nA | |
| Power Dissipation | 0.385 W | |
| Current Gain (hFE) | 60 |
Key Features
- Simplifies circuit design by integrating the bias resistor network into a single device.
- Reduces board space and component count.
- AEC−Q101 Qualified and PPAP Capable, ensuring high reliability and quality.
- Pb−Free packages are available, making it environmentally friendly.
Applications
- Supply line switches.
- Battery charger switches.
- High-side switches for LEDs, drivers, and backlights.
- Portable equipment.
Q & A
- What is the MUN5311DW1T1G? The MUN5311DW1T1G is a dual bias resistor transistor produced by onsemi, designed as a low-power NPN/PNP silicon surface mount transistor.
- What is the purpose of the monolithic bias network in the MUN5311DW1T1G? The monolithic bias network integrates two resistors, eliminating the need for external resistor bias networks and simplifying circuit design.
- What are the key specifications of the MUN5311DW1T1G? Key specifications include a polarity of NPN/PNP, base resistors of 10 kΩ, a maximum output current of 100 mA, and a supply voltage of 50 V.
- What package styles are available for the MUN5311DW1T1G? The component is available in SOT-363 (SC-70-6, SC-88) packages.
- What are the typical applications of the MUN5311DW1T1G? Typical applications include supply line switches, battery charger switches, high-side switches for LEDs and drivers, and portable equipment.
- Is the MUN5311DW1T1G AEC-Q101 Qualified? Yes, the MUN5311DW1T1G is AEC−Q101 Qualified and PPAP Capable.
- Are Pb−Free packages available for the MUN5311DW1T1G? Yes, Pb−Free packages are available.
- What is the maximum power dissipation of the MUN5311DW1T1G? The maximum power dissipation is 0.385 W.
- What is the current gain (hFE) of the MUN5311DW1T1G? The current gain (hFE) is 60.
- How does the MUN5311DW1T1G reduce component count and board space? By integrating the bias resistor network into a single device, it reduces the need for external resistors, thus reducing component count and board space.
