MUN5316DW1T1G
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onsemi MUN5316DW1T1G

Manufacturer No:
MUN5316DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5316DW1T1G is a pre-biased bipolar transistor array manufactured by onsemi. This component is designed to simplify circuit design by integrating a bipolar transistor with a monolithic bias network, consisting of two resistors. It is packaged in a surface mount SC-88/SC70-6/SOT-363 format, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Power Dissipation (Pd)187 mW
Minimum Operating Temperature-55°C
Maximum Voltage50V
Package TypeSC-88/SC70-6/SOT-363

Key Features

  • Pre-biased bipolar transistor array with integrated bias resistors, simplifying circuit design.
  • Single NPN and PNP transistor configuration.
  • Compact surface mount package (SC-88/SC70-6/SOT-363) for space-efficient designs.
  • Low power dissipation of 187 mW.
  • Wide operating temperature range from -55°C to a specified maximum temperature.

Applications

The MUN5316DW1T1G is versatile and can be used in various electronic circuits, including:

  • Audio amplifiers and audio circuits.
  • Switching and logic circuits.
  • Automotive and industrial control systems.
  • Consumer electronics such as TVs, radios, and other audio equipment.

Q & A

  1. What is the continuous collector current of the MUN5316DW1T1G?
    The continuous collector current is 100 mA.
  2. What is the maximum voltage rating of the MUN5316DW1T1G?
    The maximum voltage rating is 50V.
  3. What type of package does the MUN5316DW1T1G come in?
    The component is packaged in a surface mount SC-88/SC70-6/SOT-363 format.
  4. What is the power dissipation of the MUN5316DW1T1G?
    The power dissipation is 187 mW.
  5. What is the minimum operating temperature of the MUN5316DW1T1G?
    The minimum operating temperature is -55°C.
  6. Is the MUN5316DW1T1G suitable for high-temperature applications?
    Yes, it has a wide operating temperature range, but the exact maximum temperature should be checked in the datasheet.
  7. Can the MUN5316DW1T1G be used in automotive applications?
    Yes, it can be used in automotive and industrial control systems due to its robust specifications.
  8. What is the benefit of the integrated bias resistors in the MUN5316DW1T1G?
    The integrated bias resistors simplify circuit design by reducing the number of external components needed.
  9. Where can I find detailed specifications for the MUN5316DW1T1G?
    Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like Mouser, Digi-Key, etc.
  10. Is the MUN5316DW1T1G a single transistor or an array?
    The MUN5316DW1T1G is a pre-biased bipolar transistor array, containing both NPN and PNP transistors.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number MUN5316DW1T1G MUN5336DW1T1G MUN5116DW1T1G MUN5216DW1T1G MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 100kOhms 4.7kOhms 4.7kOhms 10kOhms 22kOhms 47kOhms 10kOhms 10kOhms 4.7kOhms
Resistor - Emitter Base (R2) - 100kOhms - - 10kOhms 22kOhms 47kOhms 47kOhms - -
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - -
Power - Max 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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