SMUN5113DW1T1G
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onsemi SMUN5113DW1T1G

Manufacturer No:
SMUN5113DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP PREBIAS 0.187W SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5113DW1T1G is a Dual PNP Bipolar Digital Transistor (BRT) produced by onsemi. This device is designed to replace a single transistor and its external resistor bias network, integrating a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMUN5113DW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, it is PbFree, Halogen Free/BFR Free, and RoHS compliant.

Key Specifications

Parameter Value
Type of Transistor Dual PNP Bipolar Digital Transistor (BRT)
Collector-Emitter Voltage (VCEO) 50V
Collector Current (IC) 0.1A
Power Dissipation (PD) 0.25W
Base Resistor (R1) 47kΩ
Base-Emitter Resistor (R2) 47kΩ
Package Type SC70-6, SC88, SOT363
Mounting SMD
Operating Temperature -55°C to 150°C

Key Features

  • Simplified Circuit Design: Integrates the transistor and its external resistor bias network into a single device, reducing the complexity of circuit design.
  • Reduced Board Space and Component Count: By combining multiple components into one, it minimizes the space required on the PCB and reduces the overall component count.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications with stringent quality and reliability requirements.
  • Environmental Compliance: PbFree, Halogen Free/BFR Free, and RoHS compliant, ensuring environmental safety and regulatory compliance.

Applications

The SMUN5113DW1T1G is primarily used in the automotive industry due to its AEC-Q101 qualification and PPAP capability. It is also suitable for other applications that require integrated transistor and resistor solutions to simplify circuit design and reduce component count. These applications can include industrial control systems, consumer electronics, and any scenario where space and component reduction are critical.

Q & A

  1. What type of transistor is the SMUN5113DW1T1G?

    The SMUN5113DW1T1G is a Dual PNP Bipolar Digital Transistor (BRT).

  2. What are the key benefits of using the SMUN5113DW1T1G?

    The key benefits include simplified circuit design, reduced board space, and decreased component count).

  3. What is the collector-emitter voltage rating of the SMUN5113DW1T1G?

    The collector-emitter voltage rating is 50V).

  4. What is the maximum collector current of the SMUN5113DW1T1G?

    The maximum collector current is 0.1A).

  5. What are the values of the base and base-emitter resistors in the SMUN5113DW1T1G?

    Both the base resistor (R1) and the base-emitter resistor (R2) are 47kΩ).

  6. Is the SMUN5113DW1T1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications).

  7. What are the environmental compliance standards met by the SMUN5113DW1T1G?

    The device is PbFree, Halogen Free/BFR Free, and RoHS compliant).

  8. What package types are available for the SMUN5113DW1T1G?

    The device is available in SC70-6, SC88, and SOT363 packages).

  9. What is the mounting type of the SMUN5113DW1T1G?

    The mounting type is Surface Mount Device (SMD)).

  10. What is the operating temperature range of the SMUN5113DW1T1G?

    The operating temperature range is -55°C to 150°C).

Product Attributes

Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:187mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number SMUN5113DW1T1G SMUN5213DW1T1G SMUN5114DW1T1G SMUN5115DW1T1G SMUN5313DW1T1G SMUN5116DW1T1G SMUN5112DW1T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Transistor Type 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 47kOhms 47kOhms 10kOhms 10kOhms 47kOhms 4.7kOhms 22kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms 47kOhms - 47kOhms - 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 187mW 187mW 187mW 187mW 187mW 187mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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