Overview
The SMUN5113DW1T1G is a Dual PNP Bipolar Digital Transistor (BRT) produced by onsemi. This device is designed to replace a single transistor and its external resistor bias network, integrating a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMUN5113DW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, it is PbFree, Halogen Free/BFR Free, and RoHS compliant.
Key Specifications
Parameter | Value |
---|---|
Type of Transistor | Dual PNP Bipolar Digital Transistor (BRT) |
Collector-Emitter Voltage (VCEO) | 50V |
Collector Current (IC) | 0.1A |
Power Dissipation (PD) | 0.25W |
Base Resistor (R1) | 47kΩ |
Base-Emitter Resistor (R2) | 47kΩ |
Package Type | SC70-6, SC88, SOT363 |
Mounting | SMD |
Operating Temperature | -55°C to 150°C |
Key Features
- Simplified Circuit Design: Integrates the transistor and its external resistor bias network into a single device, reducing the complexity of circuit design.
- Reduced Board Space and Component Count: By combining multiple components into one, it minimizes the space required on the PCB and reduces the overall component count.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications with stringent quality and reliability requirements.
- Environmental Compliance: PbFree, Halogen Free/BFR Free, and RoHS compliant, ensuring environmental safety and regulatory compliance.
Applications
The SMUN5113DW1T1G is primarily used in the automotive industry due to its AEC-Q101 qualification and PPAP capability. It is also suitable for other applications that require integrated transistor and resistor solutions to simplify circuit design and reduce component count. These applications can include industrial control systems, consumer electronics, and any scenario where space and component reduction are critical.
Q & A
- What type of transistor is the SMUN5113DW1T1G?
The SMUN5113DW1T1G is a Dual PNP Bipolar Digital Transistor (BRT).
- What are the key benefits of using the SMUN5113DW1T1G?
The key benefits include simplified circuit design, reduced board space, and decreased component count).
- What is the collector-emitter voltage rating of the SMUN5113DW1T1G?
The collector-emitter voltage rating is 50V).
- What is the maximum collector current of the SMUN5113DW1T1G?
The maximum collector current is 0.1A).
- What are the values of the base and base-emitter resistors in the SMUN5113DW1T1G?
Both the base resistor (R1) and the base-emitter resistor (R2) are 47kΩ).
- Is the SMUN5113DW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications).
- What are the environmental compliance standards met by the SMUN5113DW1T1G?
The device is PbFree, Halogen Free/BFR Free, and RoHS compliant).
- What package types are available for the SMUN5113DW1T1G?
The device is available in SC70-6, SC88, and SOT363 packages).
- What is the mounting type of the SMUN5113DW1T1G?
The mounting type is Surface Mount Device (SMD)).
- What is the operating temperature range of the SMUN5113DW1T1G?
The operating temperature range is -55°C to 150°C).