Overview
The NSBC114YDP6T5G is a dual NPN bias resistor transistor (BRT) produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes the component count. The NSBC114YDP6T5G is available in the SOT-963 package and is suitable for various applications, including automotive and other sectors requiring unique site and control change requirements, as it is AEC-Q101 qualified and PPAP capable.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Input Forward Voltage | VIN(fwd) | - | - | 40 | Vdc |
| Input Reverse Voltage | VIN(rev) | - | - | 6 | Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Resistor R1 | - | 7 | 10 | 13 | kΩ |
| Resistor Ratio R1/R2 | - | 0.17 | 0.21 | 0.25 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- Available in SOT-963 package.
Applications
The NSBC114YDP6T5G is versatile and can be used in a variety of applications, including:
- Automotive systems requiring high reliability and compliance with automotive standards.
- Industrial control systems where space and component count are critical.
- Consumer electronics that need compact and efficient designs.
- General-purpose switching and amplification circuits.
Q & A
- What is the NSBC114YDP6T5G? The NSBC114YDP6T5G is a dual NPN bias resistor transistor produced by onsemi, integrating a transistor and a monolithic bias resistor network.
- What are the key benefits of using the NSBC114YDP6T5G? It simplifies circuit design, reduces board space, and minimizes component count.
- What is the maximum collector-base voltage for the NSBC114YDP6T5G? The maximum collector-base voltage is 50 Vdc.
- Is the NSBC114YDP6T5G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the package type for the NSBC114YDP6T5G? The device is available in the SOT-963 package.
- What are the thermal characteristics of the NSBC114YDP6T5G? The total device dissipation at 25°C is 231 mW, and the thermal resistance from junction to ambient is 540 °C/W for one junction heated and 369 °C/W for both junctions heated.
- Is the NSBC114YDP6T5G RoHS compliant? Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the DC current gain (hFE) of the NSBC114YDP6T5G? The DC current gain (hFE) is 80 to 140.
- What is the collector-emitter saturation voltage (VCE(sat)) of the NSBC114YDP6T5G? The collector-emitter saturation voltage (VCE(sat)) is up to 0.25 Vdc.
- What is the junction and storage temperature range for the NSBC114YDP6T5G? The junction and storage temperature range is -55°C to +150°C.
