Overview
The MUN5330DW1T1G is a complementary bias resistor transistor produced by onsemi. This device is designed to replace a single transistor and its external resistor bias network, integrating a monolithic bias network consisting of two resistors into a single package. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MUN5330DW1T1G is available in the SOT-363 package and is Pb-free, halogen-free, and RoHS compliant, making it suitable for a variety of applications, including automotive and other sectors requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Collector-Base Voltage | VCBO | 50 Vdc |
| Collector-Emitter Voltage | VCEO | 50 Vdc |
| Collector Current - Continuous | IC | 100 mAdc |
| Input Forward Voltage | VIN(fwd) | 10 Vdc |
| Input Reverse Voltage | VIN(rev) | 10 Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 Vdc |
| DC Current Gain | hFE | 3.0 - 5.0 |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 V |
| Input Resistor R1 | R1 | 0.7 - 1.3 kΩ |
| Resistor Ratio R1/R2 | R1/R2 | 0.8 - 1.2 |
| Junction and Storage Temperature Range | TJ, Tstg | −55 to +150 °C |
Key Features
- Simplifies circuit design by integrating the bias resistor network into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free, and RoHS compliant.
- Available in SOT-363 package.
Applications
The MUN5330DW1T1G is versatile and can be used in various applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Industrial control systems: Its robust design and integrated bias resistors make it ideal for industrial control circuits.
- Consumer electronics: It can be used in consumer devices where space and component count are critical.
- General-purpose switching applications: Suitable for any application requiring a simple, integrated transistor solution.
Q & A
- What is the MUN5330DW1T1G?
The MUN5330DW1T1G is a complementary bias resistor transistor produced by onsemi, designed to replace a single transistor and its external resistor bias network.
- What are the key benefits of using the MUN5330DW1T1G?
It simplifies circuit design, reduces board space, and decreases the overall component count.
- What is the maximum collector-emitter voltage for the MUN5330DW1T1G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- Is the MUN5330DW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the package type for the MUN5330DW1T1G?
The device is available in the SOT-363 package.
- Is the MUN5330DW1T1G RoHS compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What is the junction and storage temperature range for the MUN5330DW1T1G?
The junction and storage temperature range is −55 to +150 °C.
- What is the typical DC current gain (hFE) for the MUN5330DW1T1G?
The typical DC current gain (hFE) is between 3.0 and 5.0.
- What is the collector-emitter saturation voltage (VCE(sat)) for the MUN5330DW1T1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- Can the MUN5330DW1T1G be used in general-purpose switching applications?
Yes, it is suitable for any application requiring a simple, integrated transistor solution.
