Overview
The MUN5333DW1T1G is a Complementary Bias Resistor Transistor (BRT) produced by onsemi. This device integrates a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MUN5333DW1T1G is available in the SOT-363 package and is Pb-free, halogen-free, and RoHS compliant. Although this device is currently discontinued and not recommended for new designs, it remains relevant for existing applications and maintenance.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.18 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 80 | 200 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Total Device Dissipation (TA = 25°C) | PD | 187 | - | - | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 670 | - | - | °C/W |
| Input Resistor | R1 | 3.3 | 4.7 | 6.1 | kΩ |
| Resistor Ratio (R1/R2) | - | 0.08 | 0.1 | 0.14 | - |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free, and RoHS compliant.
Applications
The MUN5333DW1T1G is suitable for various applications where space and component count need to be minimized. This includes automotive systems, industrial control circuits, and general-purpose digital circuits. It is particularly useful in designs where a compact, integrated solution for transistor and bias resistor networks is required.
Q & A
- What is the MUN5333DW1T1G? The MUN5333DW1T1G is a Complementary Bias Resistor Transistor (BRT) produced by onsemi, integrating a transistor and a monolithic bias resistor network.
- Why is the MUN5333DW1T1G discontinued? The MUN5333DW1T1G is discontinued and not recommended for new designs. However, it remains available for existing applications and maintenance.
- What are the key benefits of using the MUN5333DW1T1G? It simplifies circuit design, reduces board space, and decreases the overall component count.
- What is the typical DC current gain (hFE) of the MUN5333DW1T1G? The typical DC current gain (hFE) is 200.
- What is the maximum collector-emitter saturation voltage (VCE(sat))? The maximum collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- What is the thermal resistance, junction to ambient (RθJA), for the SOT-363 package? The thermal resistance, junction to ambient (RθJA), is 670 °C/W.
- Is the MUN5333DW1T1G RoHS compliant? Yes, the MUN5333DW1T1G is Pb-free, halogen-free, and RoHS compliant.
- What are the typical applications for the MUN5333DW1T1G? It is used in automotive systems, industrial control circuits, and general-purpose digital circuits.
- What package types are available for the MUN5333DW1T1G? The device is available in the SOT-363 package.
- What is the input resistor value (R1) range for the MUN5333DW1T1G? The input resistor value (R1) ranges from 3.3 kΩ to 6.1 kΩ.
