Overview
The NSVMUN5312DW1T2G is a Bias Resistor Transistor (BRT) produced by onsemi. This component is part of a series designed to replace a single transistor and its external resistor bias network with a single device. It integrates a monolithic bias resistor network, consisting of two resistors, into the transistor, thereby simplifying circuit design, reducing board space, and lowering component count.
This device is available in the SOT-363 package and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | 50 | Vdc |
| Collector Current − Continuous | IC | 100 | mAdc |
| Input Forward Voltage | VIN(fwd) | 40 | Vdc |
| Input Reverse Voltage | VIN(rev) | 10 | Vdc |
| Collector-Base Cutoff Current | ICBO | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | 0.2 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | Vdc |
| DC Current Gain | hFE | 60 - 100 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V |
| Total Device Dissipation (TA = 25°C) | PD | 187 - 256 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 670 - 490 | °C/W |
Key Features
- Simplifies circuit design by integrating the bias resistor network into the transistor.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- Available in SOT-363 package.
Applications
The NSVMUN5312DW1T2G is versatile and can be used in various applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Industrial control systems: Its robust design and integrated bias resistors make it ideal for industrial control circuits.
- Consumer electronics: It can be used in a wide range of consumer electronic devices where space and component count are critical.
- General-purpose switching: Suitable for general-purpose switching applications where a compact, integrated solution is required.
Q & A
- What is the NSVMUN5312DW1T2G?
The NSVMUN5312DW1T2G is a Bias Resistor Transistor (BRT) produced by onsemi, designed to integrate a transistor and its external resistor bias network into a single device.
- What are the key benefits of using the NSVMUN5312DW1T2G?
It simplifies circuit design, reduces board space, and lowers component count. It is also AEC-Q101 qualified and RoHS compliant.
- What is the maximum collector-emitter voltage for the NSVMUN5312DW1T2G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the maximum collector current for the NSVMUN5312DW1T2G?
The maximum continuous collector current (IC) is 100 mA.
- Is the NSVMUN5312DW1T2G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What package type is the NSVMUN5312DW1T2G available in?
The NSVMUN5312DW1T2G is available in the SOT-363 package.
- What are the thermal characteristics of the NSVMUN5312DW1T2G?
The total device dissipation at TA = 25°C is 187 - 256 mW, and the thermal resistance, junction to ambient, is 670 - 490 °C/W.
- Is the NSVMUN5312DW1T2G RoHS compliant?
Yes, the NSVMUN5312DW1T2G is Pb-free, halogen-free, and RoHS compliant.
- What is the DC current gain (hFE) of the NSVMUN5312DW1T2G?
The DC current gain (hFE) is between 60 and 100.
- What is the collector-emitter saturation voltage (VCE(sat)) of the NSVMUN5312DW1T2G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
