Overview
The NSVBC124EPDXV6T1G is a Complementary Bias Resistor Transistor (BRT) produced by onsemi. This device integrates a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The NSVBC124EPDXV6T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is also Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Input Forward Voltage | VIN(fwd) | - | - | 40 | Vdc |
| Input Reverse Voltage | VIN(rev) | - | - | 10 | Vdc |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc |
| DC Current Gain | hFE | 60 | 100 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Total Device Dissipation (TA = 25°C) | PD | - | - | 187 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 670 | °C/W |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other stringent applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Available in SOT-563 package.
Applications
- Automotive systems requiring high reliability and specific control change requirements.
- General-purpose digital circuits where space and component count need to be minimized.
- Industrial control systems that benefit from simplified circuit designs.
- Consumer electronics where RoHS compliance is mandatory.
Q & A
- What is the NSVBC124EPDXV6T1G used for?
The NSVBC124EPDXV6T1G is used as a Complementary Bias Resistor Transistor, integrating a transistor and bias resistors into a single device to simplify circuit design and reduce component count.
- What are the key benefits of using the NSVBC124EPDXV6T1G?
The key benefits include simplified circuit design, reduced board space, and a decrease in the overall component count. It is also AEC-Q101 qualified and RoHS compliant.
- What is the maximum collector-emitter voltage for the NSVBC124EPDXV6T1G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the maximum collector current for the NSVBC124EPDXV6T1G?
The maximum collector current (IC) is 100 mA.
- Is the NSVBC124EPDXV6T1G suitable for automotive applications?
- What package type is the NSVBC124EPDXV6T1G available in?
The NSVBC124EPDXV6T1G is available in the SOT-563 package.
- Is the NSVBC124EPDXV6T1G RoHS compliant?
- What is the thermal resistance (RθJA) of the NSVBC124EPDXV6T1G?
The thermal resistance (RθJA) is 670 °C/W.
- What is the maximum total device dissipation (PD) at TA = 25°C?
The maximum total device dissipation (PD) at TA = 25°C is 187 mW.
- Can the NSVBC124EPDXV6T1G be used in general-purpose digital circuits?
