Overview
The MUN5216DW1T1G is a dual NPN bias resistor transistor produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MUN5216DW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Input Forward Voltage | VIN(fwd) | - | - | 30 | Vdc |
| Input Reverse Voltage | VIN(rev) | - | - | 6 | Vdc |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 1.9 | mAdc |
| DC Current Gain | hFE | 160 | 350 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Resistor R1 | - | 3.3 | 4.7 | 6.1 | kΩ |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- Available in SOT-363 package.
Applications
- Automotive systems requiring high reliability and compliance with automotive standards.
- Industrial control systems where space and component count are critical.
- Consumer electronics needing compact and efficient transistor solutions.
- General-purpose switching and amplification applications.
Q & A
- What is the MUN5216DW1T1G?
The MUN5216DW1T1G is a dual NPN bias resistor transistor produced by onsemi, designed to integrate a transistor and its bias resistor network into a single device.
- What are the key benefits of using the MUN5216DW1T1G?
It simplifies circuit design, reduces board space, and decreases the overall component count.
- What is the maximum collector-emitter voltage for the MUN5216DW1T1G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- Is the MUN5216DW1T1G suitable for automotive applications?
- What package is the MUN5216DW1T1G available in?
The MUN5216DW1T1G is available in the SOT-363 package.
- What is the typical DC current gain (hFE) of the MUN5216DW1T1G?
The typical DC current gain (hFE) is 350.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MUN5216DW1T1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
- Is the MUN5216DW1T1G RoHS compliant?
- What is the junction and storage temperature range for the MUN5216DW1T1G?
The junction and storage temperature range is -55°C to +150°C.
- What are some common applications for the MUN5216DW1T1G?
