Overview
The MUN5213DW1T1G is a low-power NPN silicon surface mount transistor produced by onsemi. This device is part of the MUN series and features a dual monolithic bias resistor network. It is designed to replace a single transistor and its external resistor bias network, integrating the resistors into a single device. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MUN5213DW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring high reliability and unique site and control change requirements. The device is also Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc | ||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | ||
| Collector Current - Continuous | IC | 100 | mAdc | ||
| Input Forward Voltage | VIN(fwd) | 40 | Vdc | ||
| Input Reverse Voltage | VIN(rev) | 10 | Vdc | ||
| DC Current Gain | hFE | 80 | 140 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | ||
| Input Resistor R1 | 32.9 | 47 | 61.1 | kΩ | |
| Resistor Ratio R1/R2 | 0.8 | 1.0 | 1.2 | ||
| Package Style | SOT-363 (SC-70-6, SC-88) | ||||
| Mounting Method | Surface Mount |
Key Features
- Simplifies Circuit Design: By integrating the bias resistors into the transistor, it reduces the complexity of the circuit.
- Reduces Board Space: The monolithic design saves space on the PCB.
- Reduces Component Count: Eliminates the need for external resistors.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other high-reliability applications.
- Pb-Free, Halogen-Free, and RoHS Compliant: Environmentally friendly packaging.
Applications
- Supply Line Switches: Used in power management circuits to control supply lines.
- Battery Charger Switches: Suitable for battery charging applications.
- High-Side Switches: Can be used in various switching applications where high-side switching is required.
Q & A
- What is the MUN5213DW1T1G transistor used for? The MUN5213DW1T1G is used to replace a single transistor and its external resistor bias network, simplifying circuit design and reducing board space.
- What are the key specifications of the MUN5213DW1T1G? Key specifications include a collector-base voltage of 50 Vdc, collector-emitter voltage of 50 Vdc, and a continuous collector current of 100 mA.
- What is the package style of the MUN5213DW1T1G? The package style is SOT-363 (SC-70-6, SC-88).
- Is the MUN5213DW1T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
- What are the environmental compliance features of the MUN5213DW1T1G? The device is Pb-free, halogen-free, and RoHS compliant.
- What is the typical DC current gain of the MUN5213DW1T1G? The typical DC current gain (hFE) is 140.
- What is the collector-emitter saturation voltage of the MUN5213DW1T1G? The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
- How does the MUN5213DW1T1G reduce component count? By integrating the bias resistors into the transistor, it eliminates the need for external resistors.
- What are some common applications of the MUN5213DW1T1G? Common applications include supply line switches, battery charger switches, and high-side switches.
- What is the mounting method for the MUN5213DW1T1G? The mounting method is surface mount.
