PEMD3,315
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Nexperia USA Inc. PEMD3,315

Manufacturer No:
PEMD3,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PEMD3,315 is a pre-biased bipolar transistor (BJT) produced by Nexperia USA Inc. This component is designed in a dual configuration, featuring one NPN and one PNP transistor in a single package. It is housed in the SOT-666 package, which is a surface-mount type, making it suitable for a variety of modern electronic designs. The PEMD3,315 is particularly useful for applications requiring compact, integrated transistor solutions with built-in biasing resistors.

Key Specifications

AttributeValue
ManufacturerNexperia USA Inc.
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Package / CaseSOT-666, SOT-563
Mounting TypeSurface Mount
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Power - Max300mW
Current - Collector Cutoff (Max)1µA

Key Features

  • Dual pre-biased NPN and PNP transistors in a single SOT-666 package.
  • Built-in biasing resistors (R1 = 10kOhms, R2 = 10kOhms) for simplified circuit design.
  • Surface mount technology for compact and efficient board layout.
  • Maximum collector-emitter breakdown voltage of 50V.
  • Maximum collector current of 100mA.
  • Low Vce saturation voltage of 150mV @ 500µA, 10mA.
  • DC current gain (hFE) of at least 30 @ 5mA, 5V.

Applications

The PEMD3,315 is suitable for a wide range of electronic applications, including:

  • Audio amplifiers and audio circuits.
  • Switching and logic circuits.
  • General-purpose amplification and signal processing.
  • Automotive and industrial control systems.
  • Consumer electronics such as home appliances and portable devices.

Q & A

  1. What is the package type of the PEMD3,315?
    The PEMD3,315 is packaged in SOT-666 and SOT-563 cases.
  2. What is the maximum collector-emitter breakdown voltage of the PEMD3,315?
    The maximum collector-emitter breakdown voltage is 50V.
  3. What is the maximum collector current of the PEMD3,315?
    The maximum collector current is 100mA.
  4. What are the built-in resistor values in the PEMD3,315?
    The built-in resistors are R1 = 10kOhms and R2 = 10kOhms.
  5. What is the DC current gain (hFE) of the PEMD3,315?
    The DC current gain (hFE) is at least 30 @ 5mA, 5V.
  6. Is the PEMD3,315 suitable for surface mounting?
    Yes, the PEMD3,315 is designed for surface mount technology.
  7. What is the maximum power dissipation of the PEMD3,315?
    The maximum power dissipation is 300mW.
  8. What is the Vce saturation voltage of the PEMD3,315?
    The Vce saturation voltage is 150mV @ 500µA, 10mA.
  9. Is the PEMD3,315 still in production?
    No, the PEMD3,315 is not recommended for new designs and may be discontinued.
  10. Where can I find the datasheet for the PEMD3,315?
    The datasheet can be downloaded from various electronic component distributors such as Ariat-Tech, IBS Electronics, and GQGF.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
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Similar Products

Part Number PEMD3,315 PEMD30,315 PEMD9,315 PEMD2,315 PEMD3,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V
Resistor - Base (R1) 10kOhms 2.2kOhms 10kOhms 22kOhms 10kOhms
Resistor - Emitter Base (R2) 10kOhms - 47kOhms 22kOhms 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 20mA, 5V 100 @ 5mA, 5V 60 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - -
Power - Max 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-666 SOT-666 SOT-666 SOT-666 SOT-666

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