PBLS6003D,115
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Nexperia USA Inc. PBLS6003D,115

Manufacturer No:
PBLS6003D,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBLS6003D,115 is a pre-biased bipolar transistor array produced by Nexperia USA Inc. This component integrates one NPN and one PNP transistor in a single package, making it a versatile solution for various electronic applications. The device is known for its low VCEsat (collector-emitter saturation voltage) and low drive power requirements, which are advantageous in designs where power efficiency is crucial.

Key Specifications

ParameterValue
Transistor Type1 NPN, 1 PNP
Collector-Base Voltage (VCBO)50 V
Collector-Emitter Voltage (VCEO)60 V
Collector Current (IC)100 mA (NPN), 700 mA (PNP)
Power Dissipation (Ptot)600 mW
Transition Frequency (fT)185 MHz
Package Type6-TSOP

Key Features

  • Low VCEsat transistor and resistor-equipped transistor in one package.
  • Low threshold voltage (< 1 V) compared to MOSFETs.
  • Low drive power required.
  • Surface mount package (6-TSOP) for easy integration into modern PCB designs.
  • High collector current capability (up to 700 mA for PNP transistor).

Applications

The PBLS6003D,115 is suitable for a variety of applications, including but not limited to:

  • Load switching and power management in electronic devices.
  • Audio and video equipment where low noise and high current handling are necessary.
  • Automotive and industrial control systems requiring reliable and efficient transistor arrays.
  • General-purpose amplification and switching circuits.

Q & A

  1. What is the PBLS6003D,115? The PBLS6003D,115 is a pre-biased bipolar transistor array consisting of one NPN and one PNP transistor.
  2. What are the key benefits of using the PBLS6003D,115? It offers low VCEsat, low drive power requirements, and high collector current capability.
  3. What is the maximum collector-emitter voltage for the PBLS6003D,115? The maximum collector-emitter voltage (VCEO) is 60 V.
  4. What is the package type of the PBLS6003D,115? The component is packaged in a 6-TSOP (Thin Small Outline Package).
  5. What is the transition frequency (fT) of the PBLS6003D,115? The transition frequency is 185 MHz.
  6. What are some common applications for the PBLS6003D,115? It is used in load switching, audio and video equipment, automotive and industrial control systems, and general-purpose amplification and switching circuits.
  7. How much power can the PBLS6003D,115 dissipate? The total power dissipation (Ptot) is 600 mW.
  8. What is the collector current rating for the NPN and PNP transistors? The NPN transistor has a collector current rating of 100 mA, while the PNP transistor has a rating of 700 mA.
  9. Why is the PBLS6003D,115 preferred over MOSFETs in some applications? It has a lower threshold voltage (< 1 V) and lower drive power requirements compared to MOSFETs.
  10. Where can I find detailed specifications for the PBLS6003D,115? Detailed specifications can be found in the datasheet available on Nexperia's official website or through distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max):100mA, 700mA
Voltage - Collector Emitter Breakdown (Max):50V, 60V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 150 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
Current - Collector Cutoff (Max):1µA, 100nA
Frequency - Transition:185MHz
Power - Max:600mW
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:6-TSOP
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Similar Products

Part Number PBLS6003D,115 PBLS6004D,115 PBLS6005D,115 PBLS6023D,115 PBLS2003D,115 PBLS4003D,115 PBLS6001D,115 PBLS6002D,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active
Transistor Type 1 NPN Pre-Biased, 1 PNP 1 NPN Pre-Biased, 1 PNP - 1 NPN Pre-Biased, 1 PNP 1 NPN Pre-Biased, 1 PNP 1 NPN Pre-Biased, 1 PNP 1 NPN Pre-Biased, 1 PNP 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA, 700mA 100mA, 700mA - 100mA, 1.5A 100mA, 1A 100mA, 700mA 100mA, 700mA 100mA, 700mA
Voltage - Collector Emitter Breakdown (Max) 50V, 60V 50V, 60V - 50V, 60V 50V, 20V 50V, 40V 50V, 60V 50V, 60V
Resistor - Base (R1) 10kOhms 22kOhms - 10kOhms 10kOhms 10kOhms 2.2kOhms 4.7kOhms
Resistor - Emitter Base (R2) 10kOhms 22kOhms - 10kOhms 10kOhms 10kOhms 2.2kOhms 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V / 150 @ 500mA, 5V 60 @ 5mA, 5V / 150 @ 500mA, 5V - 30 @ 5mA, 5V / 140 @ 1A, 2V 30 @ 5mA, 5V / 220 @ 500mA, 2V 30 @ 5mA, 5V / 300 @ 100mA, 5V 30 @ 20mA, 5V / 150 @ 500mA, 5V 30 @ 20mA, 5V / 150 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A - 150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
Current - Collector Cutoff (Max) 1µA, 100nA 1µA, 100nA - 1µA, 100nA 1µA, 100nA 1µA, 100nA 1µA, 100nA 1µA, 100nA
Frequency - Transition 185MHz 185MHz - 150MHz 185MHz 150MHz 185MHz 185MHz
Power - Max 600mW 600mW - 760mW 600mW 600mW 600mW 600mW
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-74, SOT-457 SC-74, SOT-457 - SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457
Supplier Device Package 6-TSOP 6-TSOP - 6-TSOP 6-TSOP 6-TSOP 6-TSOP 6-TSOP

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