PUMD13,115
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Nexperia USA Inc. PUMD13,115

Manufacturer No:
PUMD13,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMD13,115 is a dual pre-biased transistor produced by Nexperia USA Inc. This component is designed to simplify circuit design and reduce the component count in various electronic applications. It features a combination of one NPN and one PNP transistor with built-in bias resistors, making it a versatile and efficient solution for a wide range of uses.

Key Specifications

ParameterValue
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistors (Typical)R1 = 4.7 kΩ, R2 = 47 kΩ
PackageSOT363 (SC-88)
Package Size2.1 x 1.25 x 0.95 mm
Total Power Dissipation (Ptot)300 mW
Junction Temperature (Tj) (Max)150 °C

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ)
  • Simplifies circuit design by reducing the need for external resistors
  • Reduces component count and pick-and-place operations
  • Lead-free and halogen-free according to Nexperia's halogen-free definition
  • Compliant with EU RoHS, CN RoHS, and ELV directives

Applications

The PUMD13,115 is suitable for a variety of applications across different industries, including:

  • Automotive systems
  • Industrial control systems
  • Consumer electronics
  • Mobile devices
  • Wearable technology

Q & A

  1. What is the PUMD13,115 transistor type? The PUMD13,115 is a dual pre-biased transistor with one NPN and one PNP transistor.
  2. What is the maximum collector current (Ic) of the PUMD13,115? The maximum collector current is 100 mA.
  3. What is the maximum collector-emitter breakdown voltage of the PUMD13,115? The maximum collector-emitter breakdown voltage is 50 V.
  4. What are the typical values of the built-in resistors in the PUMD13,115? The typical values are R1 = 4.7 kΩ and R2 = 47 kΩ.
  5. What package type does the PUMD13,115 use? The PUMD13,115 uses the SOT363 (SC-88) package.
  6. Is the PUMD13,115 compliant with environmental regulations? Yes, it is compliant with EU RoHS, CN RoHS, and ELV directives.
  7. What is the maximum junction temperature of the PUMD13,115? The maximum junction temperature is 150 °C.
  8. Does the PUMD13,115 contain any hazardous substances? It does not contain REACH SVHC substances exceeding 1000 ppm and is lead-free and halogen-free.
  9. Where can I purchase the PUMD13,115? You can purchase it from various distributors, including Digi-Key, Mouser, and Nexperia's official website.
  10. What are the benefits of using the PUMD13,115 in circuit design? It simplifies circuit design, reduces component count, and minimizes pick-and-place operations.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 10kOhms 22kOhms 4.7kOhms 4.7kOhms 4.7kOhms 47kOhms 22kOhms 47kOhms 4.7kOhms 4.7kOhms 2.2kOhms 47kOhms
Resistor - Emitter Base (R2) 47kOhms 10kOhms 47kOhms 4.7kOhms 47kOhms 47kOhms - - 22kOhms 10kOhms 47kOhms 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 30 @ 5mA, 5V 80 @ 5mA, 5V 30 @ 10mA, 5V 100 @ 10mA, 5V 100 @ 10mA, 5V 100 @ 1mA, 5V 100 @ 1mA, 5V 60 @ 5mA, 5V 50 @ 10mA, 5V 100 @ 10mA, 5V 100 @ 10mA, 5V 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 100nA (ICBO) 1µA
Frequency - Transition - - - - - - - - - - - 230MHz 230MHz, 180MHz
Power - Max 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP

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