Overview
The PUMD12,115 is a Resistor Equipped Transistor (RET) produced by Nexperia USA Inc. This component is designed as a pre-biased bipolar transistor, featuring both NPN and PNP transistors in a single package. It is particularly useful for applications requiring space and cost savings, as it reduces the component count and simplifies circuit design. The PUMD12,115 is housed in a TSSOP6 (SOT363) package, making it suitable for surface mount technology.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Type Number | PUMD12 | - |
Package | TSSOP6 (SOT363) | - |
Package Size | 2.1 x 1.25 x 0.95 | mm |
Maximum Collector Current (Ic) | 100 | mA |
Base Resistor (R1) | 47 | kΩ |
Emitter Base Resistor (R2) | 47 | kΩ |
Total Power Dissipation (Ptot) | 300 | mW |
Collector-Emitter Voltage (Vceo) | 50 | V |
Junction Temperature (Tj) | 150 | °C |
RoHS Status | Compliant | - |
Key Features
- Pre-biased Bipolar Transistors: The PUMD12,115 includes both NPN and PNP transistors with integrated base resistors, simplifying circuit design and reducing component count.
- Space and Cost Savings: The TSSOP6 package is compact, making it ideal for applications where space is limited.
- High Voltage Capability: With a collector-emitter voltage of 50V, this transistor is suitable for high voltage circuits, including those in automotive applications.
- Low Vce Saturation: The transistor has a low Vce saturation voltage, which helps in reducing power losses.
- RoHS Compliant: The component is lead-free and compliant with RoHS regulations, ensuring environmental friendliness.
Applications
- Automotive Electronics: The PUMD12,115 is suitable for use in 48V automotive board nets and other high voltage circuits that are subjected to large spikes and pulses.
- Consumer Electronics: It can be used in various consumer electronic devices where space and cost efficiency are crucial.
- Industrial Control Systems: The component is useful in industrial control systems that require reliable and efficient transistor performance.
- LED Drivers: It can be employed in LED driver circuits due to its pre-biased configuration and low Vce saturation.
Q & A
- What is the package type of the PUMD12,115?
The PUMD12,115 is packaged in a TSSOP6 (SOT363) package.
- What are the maximum collector current and collector-emitter voltage of the PUMD12,115?
The maximum collector current is 100 mA, and the maximum collector-emitter voltage is 50 V.
- Is the PUMD12,115 RoHS compliant?
- What are the typical values of the base and emitter base resistors in the PUMD12,115?
The typical values of both the base resistor (R1) and the emitter base resistor (R2) are 47 kΩ.
- What is the total power dissipation of the PUMD12,115?
The total power dissipation (Ptot) is 300 mW.
- What is the junction temperature limit of the PUMD12,115?
The maximum junction temperature (Tj) is 150°C.
- Can the PUMD12,115 be used in high voltage applications?
- How does the PUMD12,115 simplify circuit design?
The PUMD12,115 simplifies circuit design by integrating both NPN and PNP transistors with base resistors in a single package, reducing the overall component count.
- Is the PUMD12,115 available for sampling?
- What are some common applications of the PUMD12,115?