MUN5314DW1T1G
  • Share:

onsemi MUN5314DW1T1G

Manufacturer No:
MUN5314DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5314DW1T1G is a complementary pair of bipolar digital transistors (BRTs) manufactured by onsemi. This device is designed to replace a single transistor and its external resistor bias network, simplifying circuit design and reducing component count. The MUN5314DW1T1G features both NPN and PNP transistors in a single SOT-363 package, making it a versatile component for various electronic applications.

Key Specifications

ParameterValue
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Power Dissipation (Pd)187 mW
Minimum Operating Temperature-55°C
Maximum Collector-Emitter Voltage50V
Package TypeSOT-363

Key Features

  • Complementary pair of NPN and PNP bipolar transistors in a single package.
  • Designed to replace a single transistor and its external resistor bias network.
  • Low power dissipation of 187 mW.
  • Wide operating temperature range from -55°C to 150°C.
  • Compact SOT-363 package.

Applications

The MUN5314DW1T1G is suitable for a variety of applications, including general-purpose switching, digital circuits, and low-power amplification. It is particularly useful in designs where space is limited and component count needs to be minimized. Typical applications include consumer electronics, industrial control systems, and automotive electronics.

Q & A

  1. What is the MUN5314DW1T1G? The MUN5314DW1T1G is a complementary pair of bipolar digital transistors (BRTs) in a single SOT-363 package.
  2. Who manufactures the MUN5314DW1T1G? The MUN5314DW1T1G is manufactured by onsemi.
  3. What is the continuous collector current of the MUN5314DW1T1G? The continuous collector current is 100 mA.
  4. What is the maximum collector-emitter voltage of the MUN5314DW1T1G? The maximum collector-emitter voltage is 50V.
  5. What is the power dissipation of the MUN5314DW1T1G? The power dissipation is 187 mW.
  6. What is the minimum operating temperature of the MUN5314DW1T1G? The minimum operating temperature is -55°C.
  7. In what package is the MUN5314DW1T1G available? The MUN5314DW1T1G is available in a SOT-363 package.
  8. What are the typical applications of the MUN5314DW1T1G? Typical applications include general-purpose switching, digital circuits, low-power amplification, consumer electronics, industrial control systems, and automotive electronics.
  9. How does the MUN5314DW1T1G simplify circuit design? The MUN5314DW1T1G simplifies circuit design by replacing a single transistor and its external resistor bias network with a single component.
  10. Is the MUN5314DW1T1G RoHS compliant? Yes, the MUN5314DW1T1G is RoHS compliant.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
0 Remaining View Similar

In Stock

$0.25
832

Please send RFQ , we will respond immediately.

Same Series
NSBC114YPDXV6T1G
NSBC114YPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
MUN5314DW1T1G
MUN5314DW1T1G
TRANS PREBIAS 1NPN 1PNP 50V SC88
SMUN5315DW1T1G
SMUN5315DW1T1G
TRANS PREBIAS 1NPN 1PNP 50V SC88
NSBC114YPDP6T5G
NSBC114YPDP6T5G
TRANS PREBIAS NPN/PNP 50V SOT963
NSVBC114YPDXV6T1G
NSVBC114YPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
NSBC114YPDXV6T5G
NSBC114YPDXV6T5G
TRANS PREBIAS NPN/PNP 50V SOT563
NSVMUN5314DW1T3G
NSVMUN5314DW1T3G
TRANS NPN/PNP 50V BIPO SC88-6
NSVB114YPDXV6T1G
NSVB114YPDXV6T1G
TRANS BRT 50V 100MA SOT563

Similar Products

Part Number MUN5314DW1T1G MUN5334DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5114DW1T1G MUN5214DW1T1G MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 10kOhms 22kOhms 10kOhms 4.7kOhms 10kOhms 10kOhms 10kOhms 22kOhms 47kOhms 10kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms - - 47kOhms 47kOhms 10kOhms 22kOhms 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - -
Power - Max 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 385mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

Related Product By Categories

MUN5332DW1T1G
MUN5332DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
UMC3NT1G
UMC3NT1G
onsemi
TRANS PREBIAS NPN/PNP 50V SC88A
PUMD13,115
PUMD13,115
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
PUMB11,135
PUMB11,135
Nexperia USA Inc.
TRANS PREBIAS 2PNP 50V 6TSSOP
SMUN5314DW1T1G
SMUN5314DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
SMUN5311DW1T2G
SMUN5311DW1T2G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
MUN5331DW1T1G
MUN5331DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
PUMD30,115
PUMD30,115
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
PEMD20,115
PEMD20,115
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
PUMD10/ZLX
PUMD10/ZLX
Nexperia USA Inc.
TRANS PREBIAS
PUMD12/DG/B3,115
PUMD12/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
PUMD6HX
PUMD6HX
Nexperia USA Inc.
PUMD6HX

Related Product By Brand

MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP