MUN5314DW1T1G
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onsemi MUN5314DW1T1G

Manufacturer No:
MUN5314DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5314DW1T1G is a complementary pair of bipolar digital transistors (BRTs) manufactured by onsemi. This device is designed to replace a single transistor and its external resistor bias network, simplifying circuit design and reducing component count. The MUN5314DW1T1G features both NPN and PNP transistors in a single SOT-363 package, making it a versatile component for various electronic applications.

Key Specifications

ParameterValue
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Power Dissipation (Pd)187 mW
Minimum Operating Temperature-55°C
Maximum Collector-Emitter Voltage50V
Package TypeSOT-363

Key Features

  • Complementary pair of NPN and PNP bipolar transistors in a single package.
  • Designed to replace a single transistor and its external resistor bias network.
  • Low power dissipation of 187 mW.
  • Wide operating temperature range from -55°C to 150°C.
  • Compact SOT-363 package.

Applications

The MUN5314DW1T1G is suitable for a variety of applications, including general-purpose switching, digital circuits, and low-power amplification. It is particularly useful in designs where space is limited and component count needs to be minimized. Typical applications include consumer electronics, industrial control systems, and automotive electronics.

Q & A

  1. What is the MUN5314DW1T1G? The MUN5314DW1T1G is a complementary pair of bipolar digital transistors (BRTs) in a single SOT-363 package.
  2. Who manufactures the MUN5314DW1T1G? The MUN5314DW1T1G is manufactured by onsemi.
  3. What is the continuous collector current of the MUN5314DW1T1G? The continuous collector current is 100 mA.
  4. What is the maximum collector-emitter voltage of the MUN5314DW1T1G? The maximum collector-emitter voltage is 50V.
  5. What is the power dissipation of the MUN5314DW1T1G? The power dissipation is 187 mW.
  6. What is the minimum operating temperature of the MUN5314DW1T1G? The minimum operating temperature is -55°C.
  7. In what package is the MUN5314DW1T1G available? The MUN5314DW1T1G is available in a SOT-363 package.
  8. What are the typical applications of the MUN5314DW1T1G? Typical applications include general-purpose switching, digital circuits, low-power amplification, consumer electronics, industrial control systems, and automotive electronics.
  9. How does the MUN5314DW1T1G simplify circuit design? The MUN5314DW1T1G simplifies circuit design by replacing a single transistor and its external resistor bias network with a single component.
  10. Is the MUN5314DW1T1G RoHS compliant? Yes, the MUN5314DW1T1G is RoHS compliant.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Part Number MUN5314DW1T1G MUN5334DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5114DW1T1G MUN5214DW1T1G MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 10kOhms 22kOhms 10kOhms 4.7kOhms 10kOhms 10kOhms 10kOhms 22kOhms 47kOhms 10kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms - - 47kOhms 47kOhms 10kOhms 22kOhms 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - -
Power - Max 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 385mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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