Overview
The MUN5312DW1T1G is a Bias Resistor Transistor (BRT) produced by onsemi, designed to integrate a single transistor with a monolithic bias network consisting of two resistors. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing system cost and board space. It is available in the SOT-363 package and is suitable for various applications, including automotive and other sectors requiring unique site and control change requirements. The MUN5312DW1T1G is AEC-Q101 qualified, PPAP capable, and compliant with RoHS, Pb-free, and halogen-free standards.
Key Specifications
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | 50 | Vdc |
| Collector Current − Continuous | IC | 100 | mAdc |
| Input Forward Voltage | VIN(fwd) | 40 | Vdc |
| Input Reverse Voltage | VIN(rev) | 10 | Vdc |
| Maximum Collector Power Dissipation | Pc | 0.187 | W |
| Maximum Operating Junction Temperature | Tj | 150 | °C |
| Forward Current Transfer Ratio (hFE), MIN | hFE | 60 | |
| Built-in Bias Resistor R1 | R1 | 22 kΩ | |
| Built-in Bias Resistor R2 | R2 | 22 kΩ |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- Available in SOT-363 package.
Applications
The MUN5312DW1T1G is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification and PPAP capability, it is well-suited for automotive electronics.
- Consumer electronics: It can be used in various consumer devices where space and component count are critical.
- Industrial control systems: Its robust design makes it suitable for industrial control and automation applications.
- General-purpose switching and amplification: It can be used in any application requiring a pre-biased transistor with integrated bias resistors.
Q & A
- What is the MUN5312DW1T1G? The MUN5312DW1T1G is a Bias Resistor Transistor (BRT) that integrates a single transistor with a monolithic bias network.
- What are the key benefits of using the MUN5312DW1T1G? It simplifies circuit design, reduces board space, and decreases component count.
- What is the maximum collector current of the MUN5312DW1T1G? The maximum collector current is 100 mA.
- What is the maximum operating junction temperature of the MUN5312DW1T1G? The maximum operating junction temperature is 150°C.
- Is the MUN5312DW1T1G RoHS compliant? Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What package is the MUN5312DW1T1G available in? It is available in the SOT-363 package.
- What are the values of the built-in bias resistors R1 and R2? Both R1 and R2 are 22 kΩ.
- What is the forward current transfer ratio (hFE) of the MUN5312DW1T1G? The minimum hFE is 60.
- Is the MUN5312DW1T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the maximum collector-base voltage of the MUN5312DW1T1G? The maximum collector-base voltage is 50 Vdc.
