MUN5212DW1T1G
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onsemi MUN5212DW1T1G

Manufacturer No:
MUN5212DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN PREBIAS 0.25W SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi MUN5212DW1T1G is a dual NPN digital transistor designed for a variety of applications requiring high reliability and performance. This component is part of onsemi's family of digital transistors, which are known for their integrated bias resistors, simplifying circuit design and reducing component count. The MUN5212DW1T1G is packaged in a 6-pin SOT-363 package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
Transistor TypeDual NPN Digital Transistor
Collector Current100 mA
Collector-Emitter Voltage50 V
Base-Emitter Voltage10 V
Power Dissipation256 mW
Package Type6-Pin SOT-363
Bias ResistorsR1 = 22 kΩ, R2 = 22 kΩ
RoHS ComplianceYes

Key Features

  • Integrated bias resistors (R1 = 22 kΩ, R2 = 22 kΩ) to simplify circuit design and reduce component count.
  • High collector current of 100 mA and collector-emitter voltage of 50 V.
  • Low power dissipation of 256 mW.
  • Compact 6-pin SOT-363 package suitable for space-constrained designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The onsemi MUN5212DW1T1G is versatile and can be used in a variety of applications, including:

  • Switching circuits in consumer electronics.
  • Automotive systems requiring reliable digital switching.
  • Industrial control systems where compact and efficient components are necessary.
  • Communication devices and networking equipment.

Q & A

  1. What is the collector current of the MUN5212DW1T1G?
    The collector current is 100 mA.
  2. What is the collector-emitter voltage of the MUN5212DW1T1G?
    The collector-emitter voltage is 50 V.
  3. What type of package does the MUN5212DW1T1G use?
    The component is packaged in a 6-pin SOT-363 package.
  4. Are the bias resistors integrated into the MUN5212DW1T1G?
    Yes, the component has integrated bias resistors (R1 = 22 kΩ, R2 = 22 kΩ).
  5. Is the MUN5212DW1T1G RoHS compliant?
    Yes, it is RoHS compliant.
  6. What is the power dissipation of the MUN5212DW1T1G?
    The power dissipation is 256 mW.
  7. What are some common applications of the MUN5212DW1T1G?
    Common applications include switching circuits in consumer electronics, automotive systems, industrial control systems, and communication devices.
  8. Where can I find detailed specifications for the MUN5212DW1T1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and RS Components.
  9. What is the base-emitter voltage of the MUN5212DW1T1G?
    The base-emitter voltage is 10 V.
  10. Is the MUN5212DW1T1G suitable for high-frequency applications?
    While it can be used in various applications, it is primarily designed for digital switching rather than high-frequency applications.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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$0.23
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Similar Products

Part Number MUN5212DW1T1G MUN5214DW1T1G MUN5312DW1T1G MUN5215DW1T1G MUN5213DW1T1G MUN5216DW1T1G MUN5232DW1T1G MUN5112DW1T1G MUN5211DW1T1G MUN5212DW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 22kOhms 10kOhms 22kOhms 10kOhms 47kOhms 4.7kOhms 4.7kOhms 22kOhms 10kOhms 22kOhms
Resistor - Emitter Base (R2) 22kOhms 47kOhms 22kOhms - 47kOhms - 4.7kOhms 22kOhms 10kOhms 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V 80 @ 5mA, 10V 60 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 15 @ 5mA, 10V 60 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - -
Power - Max 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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