Overview
The MMBT2484LT1G, though the specific model queried is MMBT2484LT3G, is a low noise NPN silicon transistor produced by onsemi. This transistor is designed to offer high performance and reliability in various electronic applications. It is packaged in a SOT-23 (TO-236) case, making it suitable for compact and efficient circuit designs. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 100 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain | hFE | 250 - 800 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.35 | Vdc |
| Base-Emitter On Voltage | VBE(on) | 0.95 | Vdc |
| Noise Figure | NF | 3.0 | dB |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- Low noise characteristics, making it suitable for applications requiring minimal noise interference.
- High DC current gain (hFE) ranging from 250 to 800.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.35 Vdc.
- Low base-emitter on voltage (VBE(on)) of 0.95 Vdc.
- Compact SOT-23 (TO-236) package for efficient circuit design.
Applications
The MMBT2484LT1G transistor is versatile and can be used in a variety of applications, including:
- Audio amplifiers and audio equipment where low noise is critical.
- General-purpose switching and amplification circuits.
- Automotive and industrial control systems.
- Consumer electronics such as radios, televisions, and other audio/video devices.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the MMBT2484LT1G transistor?
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
- What is the thermal resistance, junction-to-ambient (RθJA), of the MMBT2484LT1G transistor?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.
- What is the DC current gain (hFE) range of the MMBT2484LT1G transistor?
The DC current gain (hFE) ranges from 250 to 800.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT2484LT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.35 Vdc.
- Is the MMBT2484LT1G transistor RoHS compliant?
- What is the package type of the MMBT2484LT1G transistor?
The transistor is packaged in a SOT-23 (TO-236) case.
- What are the typical applications of the MMBT2484LT1G transistor?
The transistor is used in audio amplifiers, general-purpose switching and amplification circuits, automotive and industrial control systems, and consumer electronics.
- What is the noise figure (NF) of the MMBT2484LT1G transistor?
The noise figure (NF) is 3.0 dB.
- What is the base-emitter on voltage (VBE(on)) of the MMBT2484LT1G transistor?
The base-emitter on voltage (VBE(on)) is 0.95 Vdc.
- What are the junction and storage temperature ranges for the MMBT2484LT1G transistor?
The junction and storage temperature ranges are -55 to +150 °C.
