MMBT2484LT1
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onsemi MMBT2484LT1

Manufacturer No:
MMBT2484LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS SS GP NPN 60V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2484LT1 is an NPN Bipolar transistor designed by onsemi for high gain, low noise general purpose amplifier applications. This transistor is housed in the SOT-23 package, which is ideal for lower power surface mount applications. It is known for its high efficiency and compact design, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
Package TypeSOT-23 (TO-236)
Collector Emitter Saturation Voltage (VCE(sat))0.35 V
Maximum DC Collector Current (IC)0.1 A
DC Collector/Base Gain (hfe) Min250 at 1 mA at 5 V
Maximum Collector-Base Voltage (VCEO)60 V
Maximum Collector-Base Voltage (VCBO)60 V
Maximum Emitter-Base Voltage (VEBO)6 V
Base-Emitter Saturation Voltage (VBE(sat))0.95 V
Base-Emitter Turn-On Voltage (VBE(on))0.225 V
Thermal Resistance, Junction-to-Ambient (RθJA)417 °C/W
Junction and Storage Temperature (TJ, Tstg)-55 to +150 °C

Key Features

  • Low collector-emitter saturation voltage (VCE(sat)) of 0.35 V, providing higher efficiency and extending battery life.
  • Miniature SOT-23 surface mount package, saving board space.
  • Pb-Free package available, ensuring environmental compliance.

Applications

The MMBT2484LT1 is suitable for general purpose amplifier applications, particularly where high gain and low noise are required. It is commonly used in audio amplifiers, signal processing circuits, and other electronic devices that demand reliable and efficient performance.

Q & A

  1. What is the package type of the MMBT2484LT1 transistor? The MMBT2484LT1 transistor is housed in the SOT-23 (TO-236) package.
  2. What is the maximum DC collector current of the MMBT2484LT1? The maximum DC collector current is 0.1 A.
  3. What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT2484LT1? The collector-emitter saturation voltage is 0.35 V.
  4. What is the DC collector/base gain (hfe) of the MMBT2484LT1? The DC collector/base gain (hfe) minimum is 250 at 1 mA at 5 V.
  5. Is the MMBT2484LT1 Pb-Free? Yes, the MMBT2484LT1 is available in a Pb-Free package.
  6. What is the thermal resistance, junction-to-ambient (RθJA) of the MMBT2484LT1? The thermal resistance, junction-to-ambient (RθJA) is 417 °C/W.
  7. What are the junction and storage temperature ranges for the MMBT2484LT1? The junction and storage temperature ranges are -55 to +150 °C.
  8. What are typical applications for the MMBT2484LT1 transistor? The MMBT2484LT1 is typically used in general purpose amplifier applications, including audio amplifiers and signal processing circuits.
  9. What is the base-emitter turn-on voltage (VBE(on)) of the MMBT2484LT1? The base-emitter turn-on voltage is 0.225 V.
  10. Where can I find detailed specifications for the MMBT2484LT1? Detailed specifications can be found on the onsemi official website, Digi-Key, and other electronic component distributors.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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In Stock

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Similar Products

Part Number MMBT2484LT1 MMBT2484LT1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type - NPN
Current - Collector (Ic) (Max) - 100 mA
Voltage - Collector Emitter Breakdown (Max) - 60 V
Vce Saturation (Max) @ Ib, Ic - 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max) - 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 250 @ 1mA, 5V
Power - Max - 225 mW
Frequency - Transition - -
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23-3 (TO-236)

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