Overview
The MMBT2484LT1G is a low noise NPN silicon bipolar transistor manufactured by onsemi. This transistor is designed for general-purpose applications and is known for its low noise characteristics, making it suitable for a variety of electronic circuits. The device is packaged in a SOT-23 (TO-236) surface mount package, which is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 100 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) | hFE | 250 - 800 | - |
| Collector-Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) | VCE(sat) | 0.35 | Vdc |
| Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) | VBE(on) | 0.95 | Vdc |
| Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz, BW = 200 Hz) | NF | 3.0 | dB |
Key Features
- Low Noise Characteristics: The MMBT2484LT1G is optimized for low noise operation, making it suitable for applications requiring minimal noise interference.
- General Purpose: Designed for general-purpose use, this transistor can be used in a wide range of electronic circuits.
- Pb-free, Halogen-free, and RoHS Compliant: The device is environmentally friendly and complies with RoHS regulations.
- SOT-23 Package: Surface mount package with dimensions 2.90x1.30x1.00 mm, making it compact and suitable for modern PCB designs.
- High DC Current Gain: The transistor has a high DC current gain (hFE) ranging from 250 to 800, ensuring reliable operation in amplifier circuits.
- Low Collector-Emitter Saturation Voltage: VCE(sat) of 0.35 Vdc, which is beneficial for reducing power consumption in switching applications.
Applications
- Amplifier Circuits: Suitable for use in small-signal amplifier circuits due to its high DC current gain and low noise characteristics.
- Switching Circuits: Can be used in switching applications where low collector-emitter saturation voltage is beneficial.
- Audio Equipment: Ideal for audio circuits where low noise is critical.
- Automotive Electronics: Can be used in automotive electronic systems due to its robust temperature range and reliability.
- Consumer Electronics: Suitable for various consumer electronic devices requiring general-purpose transistors.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the MMBT2484LT1G?
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
- What is the continuous collector current (IC) rating of the MMBT2484LT1G?
The continuous collector current (IC) rating is 100 mAdc.
- What is the thermal resistance, junction-to-ambient (RθJA), for the MMBT2484LT1G on an alumina substrate?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W on an alumina substrate.
- What is the junction and storage temperature range for the MMBT2484LT1G?
The junction and storage temperature range is -55 to +150 °C.
- What is the DC current gain (hFE) of the MMBT2484LT1G?
The DC current gain (hFE) ranges from 250 to 800.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT2484LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.35 Vdc.
- What is the base-emitter on voltage (VBE(on)) of the MMBT2484LT1G?
The base-emitter on voltage (VBE(on)) is 0.95 Vdc.
- What is the noise figure (NF) of the MMBT2484LT1G?
The noise figure (NF) is 3.0 dB.
- Is the MMBT2484LT1G RoHS compliant?
Yes, the MMBT2484LT1G is Pb-free, halogen-free, and RoHS compliant.
- What package type is the MMBT2484LT1G available in?
The MMBT2484LT1G is available in a SOT-23 (TO-236) surface mount package.
